DYNEX TF21920B, TF21918B, TF21916B, TF21914B Datasheet

TF219..B

TF219..B

Fast Switching Thyristor

Replaces March 1998 version, DS4271-2.3 DS4271-3.0 January 2000

APPLICATIONS

■ High Power Inverters And Choppers

■ UPS

■ Railway Traction

■ Induction Heating

■ AC Motor Drives

■ Cycloconverters

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Voltage

VOLTAGE RATINGS

Type Number

TF219 20B
TF219 18B
TF219 16B
TF219 14B

Repetitive

Peak
Voltages
V

DRM VRRM

2000

1800

1600

1400

V

I

at V

Conditions

= V

RSM

RRM

= I

DRM

RRM

or V

RRM

+ 100V

= 15mA

& T

DRM

KEY PARAMETERS

V

DRM

I

T(RMS)

I

TSM

dV/dt 200V/

2000V

190A

1200A

µs

dI/dt 500A/µs
t

q

vj

40µs

Lower voltage grades available.

CURRENT RATINGS

Symbol

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

Outline type code: MU86.

See Package Details for further information.

Parameter Conditions Max. Units

Half sinewave, 50Hz, T

Half sinewave, 50Hz, T

case

case

= 80oC

= 80oC

120

190

A

A

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TF219..B

SURGE RATINGS

Symbol

I

TSM

I2t 7.2

Surge (non-repetitive) on-state current

2

t for fusing

I

Parameter Conditions Max. Units

10ms half sine; VR = 0% V

10ms half sine; VR = 0% V

, Tj = 125˚C 1.2 kA

RRM

, Tj = 125˚C

RRM

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

T

vj

Parameter

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Virtual junction temperature

Double side cooled

Single side cooled

Clamping force 3.5kN
with mounting compound

On-state (conducting) - 125

Reverse (blocking)

Conditions Min. Max. Units

dc

Cathode dc - 0.24
Double side

Single side

- 0.1

0.02

-

- 0.04

125

-

A2s

o

C/W

o

C/W- 0.19Anode dc

o

C/W

o

C/W

o

C/W

o

o

C

C

T

stg

-

Storage temperature range

Clamping force 3.3 3.6 kN

MEASUREMENT OF RECOVERED CHARGE - Q

Measurement of Q

I

TM

tp = 1ms

dIR/dt

RA1

: Q

= IRR x t

RA1

Q

I

RR

2

RA1

0.5x I

RR

RR

RA1

-40 150

o

C

2/13

DYNAMIC CHARACTERISTICS

TF219..B

ParameterSymbol Conditions

V

TM

I

RRM/IDRM

Maximum on-state voltage At 150A peak, T

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V

Gate source 20V, 20Ω

dI/dt

Rate of rise of on-state current

tr ≤ 0.5µs, Tj = 125˚C

V

T(TO)

r

T

t

gd

(ON)TOT

I

H

q

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC
Delay time

Total turn-on timet

Tj = 25˚C, IT = 100A,
V

= 50V, IG = 1A,

D

dI/dt = 50A/µs, dI

Holding current Tj = 25oC, ITM = 1A, VD = 12V - 60 mA

T

= 125˚C, IT = 100A, VR = 50V,

j

Turn-off timet

dV/dt = 200V/µs (Linear to 60% V
dIR/dt = 30A/µs, Gate open circuit

, T

case

DRM Tj

= 25oC

case

= 125oC

= 125oC, Gate open circuit

Repetitive 50Hz

Non-repetitive

/dt = 1A/µs

G

),

DRM

t

code: B

q

Min. Max. Units

- 2.75 V

-15mA

- 200 V/µs

- 500 A/µs

- 800 A/µs

2.0-V

- 5.0 mΩ

-3*µs

- 1.5* µs

40- µs

*Typical value.

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

GT

I

GT

V

GD

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage V

Gate trigger current

Gate non-trigger voltage At V

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power

Mean gate power

DRM

V

DRM

= 12V, T
= 12V, T

DRM Tcase

ConditionsParameterSymbol

= 25oC, RL = 6Ω

case

= 25oC, RL = 6Ω

case

= 125oC, RL = 1kΩ

Typ. Max. Units

- 3.0 V

- 200 mA

- 0.2 V

- 5.0 V

-4A

-16W

-3W

3/13

TF219..B

CURVES

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