DYNEX TA44914W, TA44910W, TA44912W Datasheet

TA449..W

TA449..W

Asymmetric Thyristor

Advance Information

Replaces March 1998 version, DS4681-4.1 DS4681-5.0 January 2000

APPLICATIONS

■ UPS

■ Induction Heating

■ A.C. Motor Drives

■ Switch Mode Power Supplies

■ Choppers

FEATURES

■ Low Loss Asymmetrical Diffusion Structure

■ Fully Characterised For Operation up to 20kHz

■ High dI/dt and dV/dt ratings

VOLTAGE RATINGS

Type Number Repetitive Peak

Off-state Voltage

V

DRM

V

TA449 14 W
TA449 12 W
TA449 10 W

1400
1200
1000

Repetitive Peak

Reverse Voltage

V

RRM

V

10
10
10

KEY PARAMETERS

V

DRM

I

T(RMS)

I

TSM

dVdt 1000V/

1400V

400A

4000A

µs

dI/dt 1000A/µs
t

q

10.0µs

Lower voltage grades available.

See Package Details for further information.

CURRENT AND SURGE RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

I

TSM

I

2

t

Mean on-state current 255 A
RMS value

Surge (non-repetitive) on-state current

2

t for fusing

I

Half sine wave, duty cycle 50%,

= 80oC, Tj = 125˚C.

T

case

Tj = 125oC, tp = 1ms, VR = 0 4000 A

t

≥ 10ms 80 x 10

p

Outline type code: MU86.

UnitsMax.

400 A

3

A2s

1/12

TA449..W

THERMAL AND MECHANICAL DATA

Symbol Parameter

R

th(j-c)

th(c-h)

T

T

vj

stg

-

Thermal resistance - junction to case

Thermal resistance - case to heatsinkR

Virtual junction temperature

Storage temperature range

Clamping force

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions

Conditions Min. Max. Units

Double side cooled

dc

- 0.07

Single side cooled

- 0.154

0.02

-

- 0.04

Clamping force 5.0kN
with mounting compound

Cathode dc
Double side

Single side

On-state (conducting) - 135

Reverse (blocking)

-

125

-40 150

4.5 5.5 kN

Typ. Max. Units

o

C/W

o

C/W- 0.133Anode dc

o

C/W

o

C/W

o

C/W

o

o

o

C

C

C

V

I

I

TM

RRM

DRM

Maximum on-state voltage At 600A peak, T

Peak reverse current At V

Off-state current At V

RRM

DRM

dV/dt Maximum linear rate of rise of off-state voltage To 60% V

Rate of rise of on-state currentdI/dt

Gate source 20V, 20Ω
tr ≤ 5µs.

I

H

I

L

t

q

Holding current Tj = 25oC, ITM = 1A, VD = 12V - 80 mA

Latching current Tj = 25oC, IG = 0.5A, VD = 12V - 300 mA

Max. turn-off time VR = DF451 voltage drop,

Tj = 125oC, ITM = 200A,
dV/dt = 400V/µs (linear to 60% V
tdIR/dt = 30A/µs Gate open.

t

gt

t

gd

Typ. turn-on time (total)

Typ. delay time -1.5 µs

= 25oC, IT = 50A,

T

j

VD = 300V, IG = 1A, dI/dt = 50A/µs,
dIG/dt = 1A/µs

= 125oC

case

, T

= 125oC

case

, T

= 125oC-1mA

case

= 125oC, Gate open circuit

DRM Tj

Non-repetitive

- 2.9 V

-40mA

- 1000 V/µs

- 1000 A/µs

- 500 A/µsRepetitive

10- µs

),

DRM

-3 µs

2/12

GATE TRIGGER CHARACTERISTICS AND RATINGS

TA449..W

V

V

V

I

P

GT

I

GT

GD

RGM

FGM

GM

G(AV)

ConditionsParameterSymbol

Gate trigger voltage V

Gate trigger current

Min. non trigger voltage -0.2 V

Peak reverse gate voltage

= 12V, RL = 3Ω, T

DWM

V

= 12V, RL = 3Ω, T

DWM

= 25oC

case

= 25oC

case

-

-

Min.

Peak forward gate current -

Peak gate power ­Average gate power

Average time 10ms maxP

Max. Units

-5V

- 400 mA

-5V

-4A

-16W

-3W

3/12

TA449..W

CURVES

Fig.1 Energy per pulse for sinusoidal pulses.

Notes:

1. VD ≤ 600V.
≤ 1V.

2. V

R

3. R.C. snubber. C = 0.22µF, R = 4.7Ω.

4. Double side cooled.

4/12

Notes:

1. VD ≤ 600V.
= 1V.

2. V

R

3. R.C. snubber. C = 0.22µF, R = 4.7Ω.

4. Double side cooled.

Fig.2 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C.