DYNEX MP02HBN130-16, MP02HBN130-18, MP02HBN130-20, MP02HBT130-20, MP02HBT130-18 Datasheet

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MP02X130 Series

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (non-toxic) Isolation Medium

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

ORDERING INFORMATION

Order As:

MP02HBT130-20 or MP02HBT130-18 or MP02HBT130-16 MP02HBP130-20 or MP02HBP130-18 or MP02HBP130-16 MP02HBN130-20 or MP02HBN130-18 or MP02HBN130-16

Note: When ordering, please use the complete part number.

KEY PARAMETERS V

DRM

2000V

I

TSM

4000A

I

T(AV)(per arm)

134A

V

isol

3000V

MP02X130 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces January 2000 version, DS4477-4.0 DS4477-5.0 August 2001

Code

Circuit

HBT

HBP

HBN

Fig.1 Circuit diagrams

123

Fig. 2 Electrical connections - (not to scale)

Module type code: MP02.

For further information see Package Details.

Lower voltage grades available.

Repetitive

Peak Voltages V

DRM VRRM

Type

Number

2000

1800

1600

MP02X130-20 MP02X130-18 MP02X130-16

T

vj

= 125oC

I

DRM

= I

RRM

= 30mA

V

DSM

& V

RSM

=

V

DRM

& V

RRM

+ 100V

respectively

Conditions

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MP02X130 Series

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Test Conditions

Half wave resistive load T

case

= 75˚C

T

case

= 85˚C

T

case

= 75˚C

10ms half sine, T

j

= 125˚C

V

R

= 0

10ms half sine, T

j

= 125˚C

V

R

= 50% V

DRM

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Symbol

I

T(AV)

I

T(RMS

I

TSM

I2t

I

TSM

I2t

V

isol

Units

A

kA

A

2

s

kA

A

2

s

V

Max.

134

112

210

4.0

80 x 10

3

3.2

51.2 x 10

3

3000

Parameter

Mean on-state current

RMS value

Surge (non-repetitive) on-current

I2t for fusing

Surge (non-repetitive) on-current

I

2

t for fusing

Isolation voltage

Test Conditions

dc

Half wave

3 Phase

Mounting torque = 5Nm

with mounting compound

Reverse (blocking)

-

Mounting - M6

Electrical connections - M6

-

Parameter

Thermal resistance - junction to case

(per thyristor or diode)

Thermal resistance - case to heatsink

(per thyristor or diode)

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-hs)

T

vj

T

stg

-

Units

˚C/kW

˚C

Nm (lb.ins)

g

Max.

0.21

0.22

0.23

0.07

125

6 (55)

5 (44)

350

Min.

-

–40

-

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MP02X130 Series

Units

mA

V/µs

A/µs

V

mΩ

Test Conditions

At V

RRM/VDRM

, Tj = 125˚C

To 67% V

DRM

, Tj = 125˚C

From 67% V

DRM

to 400A, Repetitive 50Hz

gate source 20V, 20Ω,

t

r

= 0.5µs, Tj = 125˚C

At T

vj

= 125˚C. See note 1

At T

vj

= 125˚C. See note 1

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

DYNAMIC CHARACTERISTICS - THYRISTOR

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Max.

30

1000

500

1.25

1.33

Min.

-

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

Parameter

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

V

DRM

= 5V, T

case

= 25oC

V

DRM

= 5V, T

case

= 25oC

V

DRM

= 5V, T

case

= 25oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

GATE TRIGGER CHARACTERISTICS AND RATINGS

Max.

3.0

200

0.2

30

0.25

5

4

16

3

Units

V

mA

V

A

W