DYNEX MP02-190-12, MP02-190-14, MP02-190-10 Datasheet

MP02 XXX 190 Series

1/10

Symbol

Parameter

Max.

Units

160

A
A

Conditions

A

T

case

= 75oC

T

heatsink

= 75oC

T

heatsink

= 85oC

T

case

= 85oC

T

case

= 75oC

I

T(RMS)

RMS value

A

300

Mean on-state current Halfwave, resistive load

I

T(AV)

Code

Circuit

HBT

HBP

HBN

Repetitive

Peak
Voltages
V

DRM VRRM

Type

Number

1400

1200

1000

Lower voltage grades available. For full description of
part number see "Ordering Instructions" on page 3.

123

Module type code: MP02.

See Package Details for further information

MP02/190-14
MP02/190-12
MP02/190/10

Tvj = 125oC
I

DRM

= I

RRM

= 30mA

V

DSM

& V

RSM

=

V

DRM

& V

RRM

+ 100V

respectively

150

190

125

A

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (non-toxic) Isolation Medium

APPLICATIONS

■ Motor Control

■ Controlled Rectifier Bridges

■ Heater Control

■ AC Phase Control

VOLTAGE RATINGS

CURRENT RATINGS - PER ARM

PACKAGE OUTLINE

CIRCUIT OPTIONS

KEY PARAMETERS

V

DRM

1400V

I

TSM

6800A

I

T(AV)

(per arm) 190A

V

isol

2500V

Conditions

MP02 XXX 190 Series

Phase Control Dual SCR, SCR/Diode Modules

Replaces December 1998 version, DS4479-3.0 DS4479-4.0 January 2000

MP02 XXX 190 Series

2/10

Symbol

Parameter

Conditions Max.

Units

VR = 0
VR = 50% V

RRM

VR = 0
VR = 50% V

RRM

A2s

I2t for fusing

Surge (non-repetitive) on-state current

I

TSM

I2t

6800 A

A

5500

231000
150000

A2s

Symbol

Parameter

Linear rate of rise of off-state voltage

V

mA

V/µs

On-state voltageV

TM

I

RRM/IDRM

Peak reverse and off-state current

To 60% V

DRM Tj

= 125oC

At V

RRM/VDRM

, Tj = 125oC

At 1000A, T

case

= 25oC - See Note 1

Symbol

Parameter

Conditions

o

C/W

Units

o

C/W

o

C/W

R

th(c-hs)

R

th(j-c)

Virtual junction temperatureT

vj

o

C

o

C

T

sto

Storage temperature range

Mounting torque = 6Nm
with mounting compound

3 phase

halfwave

dc

Commoned terminals to base plate
AC RMS, 1min, 50Hz

Max.

Rate of rise of on-state current

V

T(TO)

Threshold voltage

V

From 67% V

DRM

to 400A Repetitive 50Hz
Gate source 20V, 20Ω
Rise time 0.5µs, Tj =125oC

mΩ

At Tvj = 125oC - See Note 1
At Tvj = 125oC - See Note 1

r

T

On-state slope resistance

* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.

dI/dt

dV/dt

Thermal resistance - case to heatsink
per Thyristor or Diode

o

C/W

Isolation voltageV

isol

kV

Thermal resistance - junction to case
per Thyristor or Diode

-40 to 125

0.17

0.18

0.19

0.07

125

2.5

1.75
30

200*

A/µs100

1.05

0.80

Units

Max.Conditions

10ms half sine;
Tj = 125oC

10ms half sine;
Tj = 125oC

SURGE RATINGS - PER ARM

THERMAL & MECHANICAL RATINGS

DYNAMIC CHARACTERISTICS

MP02 XXX 190 Series

3/10

Symbol

Parameter

Conditions

Gate non-trigger voltage

V

Units

Max.

3.0

0.2

Typ.

mA

VV

GD

Gate trigger voltage

200

V

GT

I

GT

Gate trigger current

V

DRM

= 5V, T

case

= 25oC

V

DRM

= 5V, T

case

= 25oC, RL = 6Ω

V

DRM

= 5V, T

case

= 25oC, RL = 6Ω

-

-

-

V

RGM

Peak reverse gate voltage

V5.0­A

-4

I

FGM

Peak forward gate current

Anode positive with respect to cathode

P

GM

P

G(AV)

Peak gate power
Mean gate power

-

-

16

3

W
W

Part number is made up as follows:
MP02 HBT 190 - 16

MP = Pressure contact module
02 = Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
175 = Nominal average current rating at T

case

= 75oC

16 = V

RRM

/100

Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN.

Types HBP or HBN can also be supplied with diode polarity reversed, to special order.

Examples:
MP02 HBP190-14

MP02 HBN190-12

Adequate heatsinking is required to maintain the base
temperature at 75oC if full rated current is to be achieved.
Power dissipation may be calculated by use of V

T(TO)

and r

T

information in accordance with standard formulae. We can
provide assistance with calculations or choice of heatsink if
required.

The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.

Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild
chemical etchant and then cleaned with a solvent to remove
oxide build up and foreign material. Care should be taken to
ensure no foreign particles remain.

An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.

After application of thermal compound, place the module
squarely over the mounting holes, (or 'T' slots) in the heatsink.
Using a torque wrench, slowly tighten the recommended fixing
bolts at each end, rotating each in turn no more than 1/4 of a
revolution at a time. Continue until the required torque of 6Nm
(55lb.ins) is reached at both ends.

It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.

GATE TRIGGER CHARACTERISTICS AND RATINGS

ORDERING INSTRUCTIONS

MOUNTING RECOMMENDATIONS