DYNEX MDFB8545 Datasheet

MDFB85

MDFB85

Fast Recovery Diode

Advance Information

Replaces March 1998 version, DS4177-1.3 DS4177-2.0 January 2000

APPLICATIONS

■ Freewheel Diode

■ D.C. Motor Drives

■ Welding

■ High Frequency Rectification

■ Power Supplies

FEATURES

■ Double side cooling

■ High surge capability

■ Low recovery charge

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

MDFB85 45

4500

Conditions

= V

V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

4500V

2130A

20000A
2200µC

6.0µs

Lower voltage grades available.

See Package Details for further information.

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 3350 A

T

case

T

= 65oC 3020 A

case

Half wave resistive load, T

T

= 65oC 2110 A

case

T

= 65oC 1810 A

case

Outline type code: CB486.

= 65oC 2130 A

case

= 65oC 1340 A

case

UnitsMax.

1/8

MDFB85

SURGE RATINGS

ParameterSymbol

FSM

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

2

t for fusingI2t

THERMAL AND MECHANICAL DATA

Symbol Parameter

R

R

th(j-c)

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Conditions

10ms half sine; with 0% V

RRM, Tj

10ms half sine; with 50% V

10ms half sine; with 100% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 44.0kN
with mounting compound

= 150oC

= 150oC

RRM, Tj

= 150oC

RRM, Tj

dc

Cathode dc
Double side

Single side

Max. Units

20.0 kA

6

2.0 x 10

16.0 kA

1.28 x 10

6

-kA

-A

Min.

- 0.011

- 0.023oC/W

0.03

-

- 0.06

A2sI2t for fusingI2t

A2sI2t for fusingI2t

o

C/W

o

C/W- 0.021Anode dc

o

C/W

o

C/W

2

sI

T

T

stg

Virtual junction temperature

vj

Storage temperature range -55 175

On-state (conducting) - 150

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

r

T

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

Soft factor

Threshold voltage

Slope resistance

Parameter

Conditions Max.

At 2000A peak, T
At V

, T

RRM

case

= 25oC - 2.2 V

case

= 150oC-mA

200

- 6.0

= 1000A, diRR/dt = 100A/µs

I

F

T

= 150oC, VR = 100V

case

- 1200 µC

400 - A

1.8 - -

At Tvj = 150oC - 1.5 V

At Tvj = 150oC - 0.35 mΩ

o

o

kN48.041.0Clamping force-

µs

C
C

2/8

V

FRM

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC-80V

MDFB85

DEFINITION OF K FACTOR AND Q

Q

= 0.5x IRR(t1 + t2)

RA1

dIR/dt

0.5x I

t

1

RR

I

RR

k = t

t

2

1/t2

CURVES

5000

4000

- (A)

F

Measured under pulse conditions

RA1

τ

Tj = 25˚C

3000

Tj = 150˚C

2000

Instantaneous forward current I

1000

0

0 1.0 2.0 3.0 4.0

Instantaneous forward voltage V

- (V)

F

Fig.1 Maximum (limit) forward characterisctics

3/8