DYNEX MDFB5125, MDFB5120, MDFB5122, MDFB5124 Datasheet

MDFB51

MDFB51

Fast Recovery Diode

Advance Information

Replaces March 1999 version, DS4149-4.0 DS4148-5.0 January 2000

FEATURES

● Double side cooling

● High surge capability

● Low recovery charge

APPLICATIONS

● Freewheel Diode

● D.C. Motor Drives

● Welding

● High Frequency Rectification

● Power Supplies

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

MDFB51 25
MDFB51 24
MDFB51 22
MDFB51 20

2500
2400
2200
2000

Conditions

= V

V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

2500V

2212A

24000A
1000µC

6.0µs

Lower voltage grades available.

See Package Details for further information.

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 3850 A

T

case

T

= 65oC 3560 A

case

Half wave resistive load, T

T

= 65oC 2555 A

case

T

= 65oC 2272 A

case

Outline type code: CB486.

= 65oC 2212 A

case

= 65oC 1627 A

case

UnitsMax.

1/8

MDFB51

SURGE RATINGS

ParameterSymbol

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; with 0% V

10ms half sine; with 50% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 44.0kN
with mounting compound

= 150oC

RRM, Tj

= 150oC

RRM, Tj

dc
Anode dc
Cathode dc

Double side
Single side

Max. Units

24.0 kA

2880 x 10

3

19.2 kA

1843 x 10

3

Min.

- 0.011

- 0.023oC/W

0.03

-

- 0.06oC/W

A2sI2t for fusingI2t

A2sI2t for fusingI2t

o

C/W

o

C/W- 0.021

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range

Foward (conducting) - 150

–55 175

44.040.0Clamping force-

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

K Soft factor

V

TO

Threshold voltage

Parameter

Conditions Max.

At 1500A peak, T

, T

At V

RRM

= 1000A, diRR/dt = 100A/µs

I

F

T

= 150oC, VR = 100V

case

= 150oC-mA

case

= 25oC - 1.6 V

case

100

6.0

-

- 1000 µC

- 400 A

1.8 - -

At Tvj = 150oC - 1.1 V

o

o

kN

µs

C
C

2/8

r

T

V

FRM

Slope resistance

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC-40V

At T

= 150oC - 0.3 mΩ

vj

MDFB51

DEFINITION OF K FACTOR AND Q

CURVES

5000

4000

- (A)

F

Measured under pulse conditions

RA1

dIR/dt

0.5x I

Q

= 0.5x IRR(t1 + t2)

RA1

k = t

t

t

1

2

RR

I

RR

1/t2

τ

3000

2000

Instantaneous forward current, I

1000

0

0.5 1.0 1.5 2.0 2.5

Tj = 150˚C

Tj = 25˚C

Instantaneous forward voltage, VF - (V)

Figure 1 Maximim (limit) forward characteristics

3.0

3/8