DYNEX GP400LSS18 Datasheet

GP400LSS18

Single Switch IGBT Module

DS5305-2.0 November 2000

FEATURES

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

■ 400A Per Module

APPLICATIONS

■ High Power Inverters

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP400LSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

KEY PARAMETERS V V I

C

I

C(PK)

CES CE(sat)

(typ) 3.5V (max) 400A (max) 800A

5(E1)

1

3(G

)

Fig. 1 Single switch circuit diagram

1800V

2(E)

1(C)

4(C1)

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

4

12

ORDERING INFORMATION

Order As:

5

3

GP400LSS18

Note: When ordering, please use the whole part number.

Outline type code: L

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11

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GP400LSS18

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-h)

Thermal resistance - transistor

Thermal resistance - diode

Thermal resistance - case to heatsink (per module)

Parameter

Test Conditions

= 0V

V

GE

-

DC, T

1ms, T

T

= 75˚C

case

= 80˚C

case

= 25˚C (Transistor), Tj = 150˚C

case

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

DC junction to case

Mounting torque 5Nm

Min.

-

Max.

1800

±20

400

800

2980

4000

Max.

40

70

15

Units

V

A

W

V

Units

˚C/kW

(with mounting grease)

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

Electrical connections - M4

-

–40

-

150

125

5

2

˚C

Nm

2/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP400LSS18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 40mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 400A

= 15V, IC = 400A, T

V

GE

DC

= 1ms

t

p

= 4000A, T

I

F

= 400A, T

I

F

V

= 25V, VGE = 0V, f = 1MHz

CE

case

= 125˚C

case

= 80˚C

-

= 125˚C

case

= 125˚C

case

Min.

-

4

-

Typ.

-

3.5

4.3

-

2.2

2.3

45

15

Max.

1

10

±2

7.5

4.0

5.0

400

800

2.5

2.6

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11

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GP400LSS18

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

T

= 25˚C unless stated otherwise.

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Symbol

t

d(off)

t

f

Turn-off delay time

Fall time

Parameter

Test Conditions

= 400A

I

C

= ±15V

V

GE

= 900V

V

CE

R

G(ON)

= R

G(OFF)

= 4.7Ω

L ~ 100nH

IF = 400A, VR = 900V,

dI

/dt = 2500A/µs

F

Test Conditions

= 400A

I

C

= ±15V

V

GE

Min.

-

Min.

-

Typ.

800

100

650

200

100

80

Typ.

900

150

Max.

900

130

750

300

150

100

Max.

1100

200

Units

ns

mJ

ns

mJ

µC

Units

ns

120

E

t

E

OFF

d(on)

t

ON

Q

= 900V

R

G(ON)

V

CE

= R

G(OFF)

L ~ 100nH

= 4.7Ω

Turn-off energy loss

Turn-on delay time

r

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

IF = 400A, VR = 900V,

dI

/dt = 2500A/µs

F

-

900

-

250

-

170

-

130

-

150

1100

300

210

160

mJ

ns

mJ

µC

4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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