DYNEX GP400LSS12 Datasheet

GP400LSS12

2(E)

3(G

1

)

1(C)

5(E1)

4(C1)

12

3

5

4

GP400LSS12

Single Switch IGBT Module

Replaces February 2000 version, DS5306-1.2 DS5306-2.3 November 2000

FEATURES

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

■ 1200V Rating

■ 400A Per Module

APPLICATIONS

■ High Power Inverters

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP400LSS12 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

KEY PARAMETERS V V I

C

I

C(PK)

CES CE(sat)

(typ) 2.7V (max) 400A (max) 800A

Fig. 1 Single switch circuit diagram

1200V

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP400LSS12

Note: When ordering, please use the compete part number.

Outline type code: L

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

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(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

GP400LSS12

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor

Thermal resistance - diode

Parameter

Test Conditions

= 0V

V

GE

-

DC, T

1ms, T

T

= 75˚C

case

= 80˚C

case

= 25˚C, Tj = 150˚C

case

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

Max.

1200

±20

400

800

2980

2500

Max.

42

80

Units

V

A

W

V

Units

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

15

˚C/kW

(with mounting grease)

-

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

–40

Electrical connections - M4

150

-

125

-

5

2

˚C

Nm

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP400LSS12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 20mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 400A

= 15V, IC = 400A, , T

V

GE

DC, T

t

p

I

F

I

F

V

= 50˚C

case

= 1ms, T

case

= 80˚C

= 400A

= 400A, T

= 25V, VGE = 0V, f = 1MHz

CE

= 125˚C

case

-

= 125˚C

case

= 125˚C

Min.

-

4.5

-

Typ.

-

2.7

3.2

-

2.2

2.3

45

15

Max.

1

25

±2

6.5

3.5

4

400

800

2.4

2.5

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

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