DYNEX GP400DDS18 Datasheet

GP400DDS18

Dual Switch IGBT Module

Preliminary Information

DS5359-2.0 January 2001

FEATURES

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

APPLICATIONS

■ High Power Inverters

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP400DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

KEY PARAMETERS V V I

C

I

C(PK)

CES CE(sat)

(typ) 3.5V (max) 400A (max) 1600A

2

12(C

)

2(C

)

2

1

7(C

)

Fig. 1 Dual switch circuit diagram

5

1800V

4(E2)

1(E1)

11(G 10(E2)

3(C1)

1

5(E

1

6(G

2

)

) )

6

ORDERING INFORMATION

Order As:

7

8

13

GP400DDS18

Note: When ordering, please use the whole part number.

12

9

24

11

10

Outline type code: D

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

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GP400DDS18

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T

= 25˚C unless stated otherwise

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

= 65˚C

T

case

1ms, T

T

case

= 105˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

Max.

1800

±20

400

800

3000

4000

Max.

42

80

Units

V

A

W

V

Units

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

˚C/kW

8

(with mounting grease)

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

Electrical connections - M4

Electrical connections - M8

-

–40

-

150

125

5

2

10

˚C

Nm

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP400DDS18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 20mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 400A

= 15V, IC = 400A, , T

V

GE

DC

= 1ms

t

p

= 400A

I

F

= 400A, T

I

F

= 25V, VGE = 0V, f = 1MHz

V

CE

= 125˚C

case

-

= 125˚C

case

= 125˚C

Min.

-

4.5

-

Typ.

-

5.5

3.5

4.3

400

800

2.2

2.3

45

20

Max.

1

12

2

6.5

4

5

-

2.5

2.6

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

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GP400DDS18

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

rr

I

rr

E

REC

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

Diode reverse current

Diode reverse recovery energy

Symbol

Parameter

Test Conditions

= 400A

I

C

= ±15V

V

GE

= 900V

V

CE

R

G(ON)

= R

G(OFF)

= 2.2Ω

L ~ 100nH

= 400A, VR = 50% V

I

F

/dt = 3000A/µs

dI

F

Test Conditions

CES

Min.

,

Min.

Typ.

900

-

280

-

80

500

200

140

80

250

70

Typ.

Max.

1100

350

100

650

400

180

100

Max.

Units

ns

mJ

ns

mJ

µC

-

A

mJ

Units

E

t

E

d(off)

d(on)

Q

I

REC

t

f

OFF

t

r

ON

rr

= 400A

R

G(ON)

I

C

= ±15V

V

GE

= 900V

V

CE

= R

G(OFF)

L ~ 100nH

= 2.2Ω

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

rr

Diode reverse recovery charge

Diode reverse current

IF = 400A, VR = 50% V

/dt = 2500A/µs

dI

F

CES

,

Diode reverse recovery energy

1010

-

390

-

100

-

660

-

310

-

200

-

110

-

300

-

70

1200

500

150

800

400

270

150

-

ns

mJ

ns

mJ

µC

A

mJ

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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