DYNEX GP400DDS12 Datasheet

GP400DDS12

GP400DDS12

Powerline N-Channel Dual Switch IGBT Module

DS5341-1.1 February 2000

The GP400DDS12 is a dual switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.

Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.

These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.

The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.

Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.

12

KEY PARAMETERS

V

CES

V

CE(sat)

I

C

I

C(PK)

5

6

7

8

9

11

10

(typ) 2.7V
(max) 400A
(max) 800A

13

24

1200V

FEATURES

■ n - Channel

■ Enhancement Mode

■ High Input Impedance

■ Optimised For High Power High Frequency Operation

■ Isolated Base

■ Full 1200V Capability

■ 400A Per Arm

APPLICATIONS

■ High Power Switching

■ Motor Control

■ Inverters

■ Traction Systems

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

Outline type code: D

(See package details for further information)

Fig. 1 Electrical connections - (not to scale)

2

)

12(C

2(C

2

2

7(C

)

)

1

)

4(E2)

1(E1)

11(G
10(E

3(C1)

5(E
6(G

2

)

1

)

1

)

Fig.2 Dual switch circuit diagram

ORDERING INFORMATION

Order As: GP400DDS12
Note: When ordering, please use the whole part number.

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GP400DDS12

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In

extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.

T

= 25˚C unless stated otherwise.

case

Test ConditionsSymbol

V
V

GES

I

I

C(PK)

CES

C

max

isol

Collector-emitter voltage
Gate-emitter voltage

Collector current

Isolation voltageV

VGE = 0V 1200

­DC, T
DC, T
1ms, T
T

case

= 25˚C 600

case

= 75˚C 400

case

= 75˚C A800

case

= 25˚C (Transistor)

Commoned terminals to base plate.
AC RMS, 1 min, 50Hz

THERMAL AND MECHANICAL RATINGS

Symbol Conditions

R

R
R

th(j-c)

th(j-c)

th(c-h)

T

j

Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm) DC junction to case

Thermal resistance - Case to heatsink
(per module)

Junction temperature

DC junction to case

Mounting torque 5Nm
(with mounting grease)

Transistor
Diode

Max.Parameter

3750Maximum power dissipationP

2500

Min.Parameter Units

-

-

-

Max.

8-

Units

V
V±20
A
A

W

V

o

C/kW35

o

C/kW70-

o

C/kW

o

C150

o

C125-

T

stg

- Mounting - M6 Nm5-

Storage temperature range
Screw torque

-

Electrical connections - M4 Nm2­Electrical connections - M8 Nm10-

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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–40

125

o

C

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP400DDS12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(SAT)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Conditions

VGE = 0V, VCE = V
VGE = 0V, VCE = V

CES

CES

, T

VGE = ±20V, VCE = 0V

= 125˚C mA50--

case

CE

Min.

VGE = 15V, IC = 400A

Collector-emitter saturation voltage

= 125˚C V

case

Diode forward current

Diode maximum forward current

DC
tp = 1ms A

Diode forward voltage IF = 400A 3.02.5-

Input capacitance
Module inductance

IF = 400A, T
VCE = 25V, VGE = 0V, f = 1MHz

= 125˚C 2.92.4-

case

-

Typ.

-

-

Max.

-

-

-4IC = 120mA, VGE = V

±4

3.52.7-

Units

mA1

µA

V7.5
V

4.03.2-VGE = 15V, IC = 400A, T

400

-

-

­800

-

A

V
V

45

-

-

-

nF

nH

-20

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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