DYNEX GP400DDM12 Datasheet
GP400DDM12
13
24
12
11
10
7
6
5
8
9
GP400DDM12
Dual Switch IGBT Module
Advance Information
DS5503-1.0 October 2001
FEATURES
■ High Thermal Cycling Capability
■ 400A Per Switch
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates
APPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
■ Traction Drives
■ Resonant Converters
The Powerline range of high power modules includes half
bridge, dual, chopper and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The GP400DDM12 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
KEY PARAMETERS
V
V
I
C
I
C(PK)
CES
CE(sat)
(typ) 2.7V
(max) 400A
(max) 800A
5(E1)
6(G1)
1
)
7(C
Fig. 1 Dual switch circuit diagram
1(E1)
3(C1)
1200V
2(C2)
4(E2)
12(C
11(G2)
10(E
2
)
2
)
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP400DDM12
Note: When ordering, please use the whole part number.
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9
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Outline type code: D
GP400DDM12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Parameter
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(j-c)
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Parameter
Test Conditions
= 0V
V
GE
-
= 80˚C
T
case
1ms, T
T
case
= 105˚C
case
= 25˚C, Tj = 150˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
Min.
-
-
Max.
1200
±20
400
800
3470
4000
Max.
36
80
Units
V
V
A
A
W
V
Units
˚C/kW
˚C/kW
junction to case
R
th(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
-
˚C/kW
8
(with mounting grease)
-
T
Junction temperature
j
Transistor
Diode
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
-
–40
Electrical connections - M4
Electrical connections - M8
150
-
125
125
-
-
-
5
2
10
˚C
˚C
˚C
Nm
Nm
Nm
29 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ELECTRICAL CHARACTERISTICS
T
= 25˚C unless stated otherwise.
case
GP400DDM12
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Test Conditions
= 0V, VCE = V
V
GE
VGE = 0V, VCE = V
= ±20V, VCE = 0V
V
GE
I
= 120mA, VGE = V
C
CES
CES
, T
CE
VGE = 15V, IC = 800A
= 15V, IC = 800A, , T
V
GE
DC, T
t
p
I
F
I
F
V
= 50˚C
case
= 1ms
= 800A
= 800A, T
= 25V, VGE = 0V, f = 1MHz
CE
= 125˚C
case
-
= 125˚C
case
case
= 125˚C
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
2.7
3.2
-
-
2.2
2.3
45
20
Max.
1
20
±2
7.5
3.5
4
400
800
2.5
2.5
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9
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