DYNEX GP250MHB06S Datasheet
GP250MHB06S
GP250MHB06S
Half Bridge IGBT Module
Replaces January 2000 version, DS4325 - 5.0 DS4325-6.0 October 2001
FEATURES
■ n - Channel
■ High Switching Speed
■ Low Forward Voltage Drop
■ Isolated Base
APPLICATIONS
■ PWM Motor Control
■ UPS
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP250MHB06S is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
KEY PARAMETERS
V
V
I
C25
I
C75
I
C(PK)
CES
CE(sat)
(typ) 2.2V
(max) 350A
(max) 250A
(max) 700A
2
11(C
)
1(E
)
1C2
1
9(C
)
600V
Fig. 1 Half bridge circuit diagram
2(E2)
6(G
7(E
3(C1)
5(E
4(G
2
)
2
)
1
)
1
)
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
11
10
1
8
9
2
3
6
7
5
4
GP250MHB06S
Note: When ordering, use complete part number.
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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GP250MHB06S
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Test ConditionsSymbol
V
V
I
CES
GES
I
C
C(PK)
max
isol
Collector-emitter voltage
Gate-emitter voltage
Collector current
Isolation voltageV
VGE = 0V 600
-
DC, T
DC, T
1ms, T
1ms, T
= 25˚C
case
= 75˚C 250
case
= 25˚C
case
= 75˚C A500
case
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
THERMAL AND MECHANICAL RATINGS
Symbol Conditions
Thermal resistance - transistor
Thermal resistance - diode DC junction to case
Thermal resistance - Case to heatsink
Junction temperature
j
R
R
R
th(j-c)
th(j-c)
th(c-h)
T
Parameter Units
DC junction to case per arm
(per module)
Mounting torque 5Nm (with mounting grease) 15-
Transistor
Diode
Max.Parameter
1250Maximum power dissipationP
2500
Min.
-
-
350
700
Max.
Units
V
V±20
A
A
A
W(Transistor)
V
o
C/kW100
o
C/kW250--
o
C/kW
o
o
C150
C125-
T
stg
- Mounting - M6 Nm5-
Storage temperature range
Screw torque
-
- 40
125
o
C
Electrical connections - M6 Nm5-
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ELECTRICAL CHARACTERISTICS
T
= 25˚C unless stated otherwise.
j
GP250MHB06S
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(SAT)
I
F
I
FM
V
F
C
ies
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Conditions
= 0V, VCE = V
V
GE
VGE = 0V, VCE = V
CES
, Tj = 125˚C mA50--
CES
VGE = ±20V, VCE = 0V
= 10mA, VGE = V
C
V
= 15V, IC = 250A
GE
CE
DC
t
= 1ms A
p
Min.
Diode forward voltage IF = 250A, 1.91.1-
IF = 250A, Tj = 125˚C 1.81.05-
Typ.
-
-
-
-
Max.
-
-
-4I
-
-
1
2.72.2-
2.82.3-VGE = 15V, IC = 250A, Tj = 125˚C
250
500
Units
mA15
µA
V7.5
V
V
A
V
V
Input capacitance VCE = 25V, VGE = 0V, f = 1MHz -27000-pF
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
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