DYNEX GP2400ESM12 Datasheet

GP2400ESM12

Powerline N-Channel Single Switch IGBT Module

Preliminary Information

DS5360-1.1 May 2000

The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands.

This device is optimised for traction drives and other applications requiring high thermal cycling capability.

V V I

C

I

C(PK)

CES CE(sat)

KEY PARAMETERS

1200V (typ) 2.7V (max) 2400A (max) 4800A

FEATURES

■ n - Channel Enhancement Mode

■ Non Punch Through Silicon

■ High Gate Input Impedance

■ Optimised For High Power High Frequency Operation

■ Isolated MMC Base with AlN

■ 1200V Rating

■ 2400A Per Module

APPLICATIONS

■ High Power Switching

■ Motor Control

■ Inverters

■ Traction Drives

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

Outline type code: E

(See package details for further information)

Fig. 1 Electrical connections - (not to scale)

External connection

Aux C

G Aux E

E1 E2 E3

External connection

Fig.2 Single switch circuit diagram

C2C1

C3

ORDERING INFORMATION

Order As: GP2400ESM12 Note: When ordering, please use the whole part number.

1/12

GP2400ESM12

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.

= 25˚C unless stated otherwise.

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-h)

Thermal resistance - transistor

Thermal resistance - diode

Thermal resistance - case to heatsink (per module)

Parameter

Test Conditions

= 0V

V

GE

-

DC, T

1ms, T

T

= 75˚C, Tj = 125˚C

case

= 75˚C, Tj = 125˚C

case

= 25˚C (Transistor), Tj = 150˚C

case

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

DC junction to case

Mounting torque 5Nm

Min.

-

Max.

1200

±20

2400

4800

20.8

2500

Max.

6

13.3

6

Units

V

A

kW

V

Units

˚C/kW

(with mounting grease)

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

Electrical connections - M4

Electrical connections - M8

-

–40

-

150

125

5

2

10

˚C

Nm

2/12

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP2400ESM12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 120mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 2400A

= 15V, IC = 2400A, , T

V

GE

DC, T

t

p

I

F

I

F

V

= 50˚C, Tj = 125˚C

case

= 1ms, Tj = 125˚C

= 2400A

= 2400A, T

= 25V, VGE = 0V, f = 1MHz

CE

= 125˚C

case

-

= 125˚C

case

= 125˚C

Min.

-

4

-

Typ.

-

2.7

3.2

-

2.2

2.3

270

10

Max.

3

100

12

7.5

3.5

4.0

2400

4800

2.4

2.5

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/12

GP2400ESM12

ELECTRICAL CHARACTERISTICS

For definition of switching waveforms, refer to figure 3 and 4.

T

= 25˚C unless stated otherwise.

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

T

= 125˚C unless stated otherwise.

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Symbol

t

d(off)

t

f

Turn-off delay time

Fall time

Parameter

Test Conditions

= 2400A

I

C

V

= ±15V

GE

= 600V

V

CE

R

G(ON)

= R

G(OFF)

= 3.3Ω

L ~ 80nH

IF = 2400A, VR = 50% V

/dt = 2000A/µs

dI

F

Test Conditions

= 2400A

I

C

= ±15V

V

GE

CES

Min.

,

Min.

Typ.

2300

-

400

-

820

-

2600

-

1100

-

490

-

200

-

Typ.

2570

-

400

-

Max.

Units

ns

-

ns

-

mJ

-

ns

-

ns

-

mJ

-

µC

-

Units

ns

-

ns

-

E

t

d(on)

E

Q

OFF

t

ON

980

V

G(ON)

= 600V

CE

= R

G(OFF)

L ~ 80nH

= 3.3Ω

Turn-off energy loss

Turn-on delay time

r

Rise time

R

Turn-on energy loss

Diode reverse recovery charge

rr

IF = 2400A, VR = 50% V

/dt = 2000A/µs

dI

F

CES

,

-

2650

-

1000

-

620

-

400

-

mJ

-

ns

-

ns

-

mJ

-

µC

-

4/12

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.