DYNEX GP200MHS18 Datasheet

GP200MHS18

Half Bridge IGBT Module

DS5304-3.1 January 2001

FEATURES

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

■ 200A Per Arm

APPLICATIONS

■ High Power Inverters

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP200MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

KEY PARAMETERS V V I

C

I

C(PK)

CES CE(sat)

(typ) 3.5V (max) 200A (max) 400A

2

11(C

)

1(E

)

1C2

1

9(C

)

Fig. 1 Half bridge circuit diagram

1800V

2(E2)

6(G 7(E

3(C1)

5(E 4(G

2

)

2

)

1

)

1

)

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP200MHS18

11 10

8 9

1

2

3

6

7

5 4

Note: When ordering, please use the whole part number.

Outline type code: M

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

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GP200MHS18

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

DC, T

1ms, T

T

= 55˚C for Tj = 125˚C

case

= 110˚C

case

= 25˚C, Tj = 150˚C

case

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

Max.

1800

±20

200

400

1500

4000

Max.

84

160

Units

V

A

W

V

Units

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

˚C/kW

7

(with mounting grease)

-

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

–40

150

-

125

-

5

˚C

Nm

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP200MHS18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 10mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 200A

= 15V, IC = 200A, , T

V

GE

DC

= 1ms

t

p

= 200A

I

F

= 200A, T

I

F

V

= 25V, VGE = 0V, f = 1MHz

CE

= 125˚C

case

-

= 125˚C

case

= 125˚C

Min.

-

4.5

-

Typ.

-

5.5

3.5

4.3

-

2.2

2.3

25

30

Max.

1

7

1

6.5

4

5

200

400

2.5

2.6

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

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