DYNEX GP200MHS12 Datasheet
GP200MHS12
3(C1)
2(E2)
1(E
1C2
)
11(C
2
)
9(C
1
)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)
GP200MHS12
Half Bridge IGBT Module
Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000
FEATURES
■ Non Punch Through Silicon
■ Isolated Copper Baseplate
■ Low Inductance Internal Construction
APPLICATIONS
■ High Power Inverters
■ Motor Controllers
■ Induction Heating
■ Resonant Converters
The Powerline range of high power modules includes half
bridge and single switch configurations covering voltages from
600V to 3300V and currents up to 4800A.
The GP200MHS12 is a half bridge 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
KEY PARAMETERS
V
V
I
C
I
C(PK)
CES
CE(sat)
(typ) 2.7V
(max) 200A
(max) 400A
Fig. 1 Half bridge circuit diagram
1200V
ORDERING INFORMATION
Order As:
11
10
1
GP200MHS12
Note: When ordering, please use the whole part number.
8
9
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
www.dynexsemi.com
2
3
6
7
5
4
GP200MHS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Collector-emitter voltage
Gate-emitter voltage
Collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Parameter
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(j-c)
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Parameter
Test Conditions
= 0V
V
GE
-
DC, T
1ms, T
T
= 72˚C
case
= 72˚C
case
= 25˚C, Tj = 150˚C
case
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
Min.
-
-
Max.
1200
±20
200
400
1490
2500
Max.
84
160
Units
V
V
A
A
W
V
Units
˚C/kW
˚C/kW
junction to case
R
th(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
-
15
˚C/kW
(with mounting grease)
-
T
Junction temperature
j
Transistor
Diode
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
-
–40
Electrical connections - M6
150
-
125
125
-
-
5
5
˚C
˚C
˚C
Nm
Nm
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
T
= 25˚C unless stated otherwise.
case
GP200MHS12
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Test Conditions
= 0V, VCE = V
V
GE
VGE = 0V, VCE = V
= ±20V, VCE = 0V
V
GE
I
= 10mA, VGE = V
C
CES
CES
, T
CE
VGE = 15V, IC = 200A
= 15V, IC = 200A, , T
V
GE
DC
= 1ms
t
p
= 200A
I
F
= 200A, T
I
F
= 25V, VGE = 0V, f = 1MHz
V
CE
= 125˚C
case
-
= 125˚C
case
case
= 125˚C
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2.7
3.2
-
-
2.2
2.3
25
30
Max.
1
12
±1
6.5
3.5
4.0
200
400
2.4
2.5
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
www.dynexsemi.com
Loading...