DYNEX GP1601FSS18 Datasheet

GP1601FSS18

C1E1

C2E2

G

Aux E

Aux C

GP1601FSS18

Single Switch Low V

Replaces January 2000 version, DS5248-3.0 DS5248-4.2 January 2001

FEATURES

■ Low V

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

■ 1600A Per module

CE(SAT)

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

■ Traction Drives

■ Resonant Converters

The Powerline range of high power modules includes dual

KEY PARAMETERS V V I

C

I

C(PK)

CES CE(sat)

(typ) 2.6V (max) 1600A (max) 3200A

Aux C

G Aux E

External connection

CE(SAT)

1800V

E1 E2

IGBT Module

C2C1

and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP1601FSS18 is a single switch 1800V, n channel

Fig. 1 Single switch circuit diagram

enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low V losses, the module is of particular relevance in low to medium

to minimise conduction

CE(SAT)

frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP1601FSS18

Note: When ordering, please use the whole part number.

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9

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Outline type code: F

GP1601FSS18

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor

Thermal resistance - diode

Parameter

Test Conditions

= 0V

V

GE

-

T

= 70˚C for Tj = 125˚C

case

1ms, T

T

case

= 115˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

Max.

1800

±20

1600

3200

11.4

4000

Max.

11

20

Units

V

A

kW

V

Units

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

˚C/kW

8

(with mounting grease)

-

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

–40

Electrical connections - M4

Electrical connections - M8

150

-

125

-

5

2

10

˚C

Nm

2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP1601FSS18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

V

= ±20V, VCE = 0V

GE

= 80mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 1600A

= 15V, IC = 1600A, T

V

GE

DC

= 1ms

t

p

= 1600A

I

F

= 1600A, T

I

F

= 25V, VGE = 0V, f = 1MHz

V

CE

= 125˚C

case

-

= 125˚C

case

= 125˚C

Min.

-

4.5

-

Typ.

-

5.5

2.6

3.3

-

2.2

2.3

180

15

Max.

2

50

8

6.5

3.2

4

1600

3200

2.5

2.6

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9

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