DYNEX GP1600FSS12 Datasheet

GP1600FSS12

13

24

9

8

7

10

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12

6

5

GP1600FSS12

Powerline N-Channel Single Switch IGBT Module

Advance Information

Replaces October 1999 version, DS5173-3.0 DS5173-4.0 January 2000

The GP1600FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands.

Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters.

V V I

C

I

C(PK)

CES CE(sat)

KEY PARAMETERS

1200V (typ) 2.7V (max) 1600A (max) 3200A

FEATURES

■ n - Channel

■ Enhancement Mode

■ High Input Impedance

■ Optimised For High Power High Frequency Operation

■ Isolated Base

■ Full 1200V Capability

■ 1600A Per Module

APPLICATIONS

■ High Power Switching

■ Motor Control

■ Inverters

■ Traction Systems

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

Outline type code: F

(See package details for further information)

Fig. 1 Electrical connections - (not to scale)

3/4(E)

8(E1)

1

9(G

)

Fig.2 Single switch circuit diagram

1/2(C)

7(C1)

ORDERING INFORMATION

Order As: GP1600FSS12 Note: When ordering, please use the whole part number.

1/11

GP1600FSS12

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.

T

= 25˚C unless stated otherwise.

case

Test ConditionsSymbol

V

I

C(PK)

CES

GES

I

C

max

isol

Collector-emitter voltage Gate-emitter voltage

Collector current

Isolation voltageV

VGE = 0V 1200

DC, T DC, T 1ms, T T

case

= 25˚C 2100

case

= 75˚C 1600 A

case

= 75˚C A3200

case

= 25˚C (Transistor)

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

THERMAL AND MECHANICAL RATINGS

Symbol Conditions

DC junction to case

Mounting torque 5Nm (with mounting grease)

Transistor Diode

R

R R

th(j-c)

th(c-h)

T

j

Thermal resistance - transistor Thermal resistance - diode DC junction to case

Thermal resistance - Case to heatsink (per module)

Junction temperature

Max.Parameter

11400Maximum power dissipationP

Min.Parameter Units

-

Max.

8-

Units

V V±20 A

W

V2500

o

C/kW11

o

C/kW20-

o

C/kW

o

C150

o

C125-

T

stg

- Mounting - M6 Nm5-

Storage temperature range Screw torque

-

Electrical connections - M4 Nm2Electrical connections - M8 Nm10-

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

2/11

–40

125

o

C

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP1600FSS12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(SAT)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Conditions

VGE = 0V, VCE = V VGE = 0V, VCE = V

CES

, T

VGE = ±20V, VCE = 0V

= 125˚C mA75--

case

CE

Min.

VGE = 15V, IC =1600A

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

VGE = 15V, IC = 1600A, T DC

tp = 1ms A

= 125˚C

case

Diode forward voltage IF =1600A 2.42.2-

Input capacitance Module inductance

IF =1600A, T

VCE = 25V, VGE = 0V, f = 1MHz

= 125˚C 2.52.3-

case

-

Typ.

-

Max.

-

-4IC = 120mA, VGE = V

1600

3200

-

Units

mA2

8

µA

V7.5

3.52.7-

4.03.2-

V V

A

V

180

-

nF

nH

-15

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/11

GP1600FSS12

INDUCTIVE SWITCHING CHARACTERISTICS

For definition of switching waveforms, refer to figure 3 and 4.

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

E

OFF

t

d(on)

E

ON

Q

T

= 125˚C unless stated otherwise.

case

t

d(off)

t

E

OFF

t

d(on)

Turn-off delay time

Fall time

f

Turn-off energy loss

Turn-on delay time ns

Rise time

r

Turn-on energy loss

Diode reverse recovery charge

rr

Diode reverse recovery charge

rr

Turn-off delay time

Fall time

f

Turn-off energy loss

Turn-on delay time ns

Rise time

r

Parameter Min. Typ. Max. Units

Conditions

IC = 1600A

VGE = ±15V

VCE = 600

R

= R

G(ON)

G(OFF)

L ~ 100nH

IF = 1600A

VR = 50%V

dIF/dt = 2000A/µs

IC = 1600A

VGE = ±15V

VCE = 600

R

= R

G(ON)

G(OFF)

L ~ 100nH

= 3.3Ω

,

CES

= 3.3Ω

-

1650

200

-

350

1800

250 450

ns ns

mJ

1750- 1600

450

-t 160

-

100-

-

1900

250

400

-

550

200

130

2100

300 500

ns

mJ

µC

µC-170-

ns ns

mJ

2000- 1750

500

-t

550

ns

4/11

E

Q

Turn-on energy loss

ON

Diode reverse recovery charge

rr

Diode reverse recovery charge

rr

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

IF = 1600A

VR = 50%V

CES

,

dIF/dt = 2000A/µs

250

-

350

350250-

mJ

µC

µC-225-