DYNEX GP1600FSM12 Datasheet
GP1600FSM12
GP1600FSM12
Single Switch IGBT Module
Advance Information
DS5451-1.2 October 2001
FEATURES
■ High Thermal Cycling Capability
■ 1600A Per Module
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates
APPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
■ Traction Drives
■ Resonant Converters
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The GP1600FSM12 is a singlel switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
KEY PARAMETERS
V
V
I
C
I
C(PK)
CES
CE(sat)
(typ) 2.7V
(max) 1600A
(max) 3200A
Fig.1 Single switch circuit diagram
Aux C
1200V
Aux C
G
Aux E
Aux E
External connection
C2C1
E1 E2
External connection
C1E1
ORDERING INFORMATION
Order As:
G
C2E2
GP1600FSM12
Note: When ordering, please use the complete part number.
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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GP1600FSM12
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Test ConditionsSymbol
V
CES
V
GES
I
C
I
CM
P
max
V
isol
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum power dissipation
Isolation voltage
VGE = 0V 1200
-
DC, T
1ms, T
T
case
= 82˚C 1600
case
= 112˚C A3200
case
= 25˚C (Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
THERMAL AND MECHANICAL RATINGS
Symbol Conditions
Thermal resistance - transistor
Thermal resistance - diode DC junction to case
Thermal resistance - Case to heatsink
(per module)
Junction temperature
j
R
R
R
th(j-c)
th(j-c)
th(c-h)
T
Parameter
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Max.Parameter
Units
V
V±20
A
13.9
2500
Min.
Max.
-
-
-
kW
V
Units
o
C/kW9
o
C/kW20-
o
8-
C/kW
o
C150
o
C125-
T
stg
- Mounting - M6 Nm5-
Storage temperature range
Screw torque
-
–40
125
o
C
Electrical connections - M4 Nm2Electrical connections - M8 Nm10-
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ELECTRICAL CHARACTERISTICS
T
= 25˚C unless stated otherwise.
case
GP1600FSM12
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(SAT)
I
F
I
FM
V
F
C
ies
L
M
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Conditions
VGE = 0V, VCE = V
VGE = 0V, VCE = V
CES
CES
, T
VGE = ±20V, VCE = 0V
= 125˚C mA75--
case
CE
Min.
VGE = 15V, IC =1600A
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
VGE = 15V, IC = 1600A, T
DC
tp = 1ms A
= 125˚C
case
Diode forward voltage IF =1600A 2.42.2-
Input capacitance
Module inductance
IF =1600A, T
VCE = 25V, VGE = 0V, f = 1MHz
= 125˚C 2.52.3-
case
-
Typ.
-
-
-
-
Max.
-
-
-4.5IC = 120mA, VGE = V
1600
3200
-
Units
mA2
8
µA
V6.5
3.52.7-
4.03.2-
V
V
A
V
V
180
-
-
-
nF
nH
-15
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
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