DYNEX GP1201FSS18 Datasheet
GP1201FSS18
GP1201FSS18
FEATURES
■ Low V
■ Non Punch Through Silicon
■ Isolated Copper Baseplate
■ Low Inductance Internal Construction
■ 1200A Per Module
CE(SAT)
APPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
■ Traction Drives
■ Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1201FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V
losses, the module is of particular relevance in low to medium
to minimise conduction
CE(SAT)
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Single Switch Low V
KEY PARAMETERS
V
V
I
C
I
C(PK)
CES
CE(sat)
(typ) 2.6V
(max) 1200A
(max) 2400A
Aux C
G
Aux E
Fig. 1 Single switch circuit diagram
Aux C
Aux E
1800V
External connection
E1 E2
External connection
G
CE(SAT)
IGBT Module
DS5411-1.1 January 2001
C2C1
C1E1
C2E2
Order As:
GP1201FSS18
Note: When ordering, please use the whole part number.
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9
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GP1201FSS18
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
= 25˚C unless stated otherwise
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Parameter
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(j-c)
Thermal resistance - transistor
Thermal resistance - diode
Parameter
Test Conditions
= 0V
V
GE
-
= 65˚C
T
case
1ms, T
T
case
= 115˚C
case
= 25˚C, Tj = 150˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
Min.
-
-
Max.
1800
±20
1200
2400
8.5
4000
Max.
15
30
Units
V
V
A
A
kW
V
Units
˚C/kW
˚C/kW
junction to case
R
th(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
-
˚C/kW
8
(with mounting grease)
T
Junction temperature
j
Transistor
Diode
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
-
Electrical connections - M4
Electrical connections - M8
-
-
–40
-
-
-
150
125
125
5
2
10
˚C
˚C
˚C
Nm
Nm
Nm
2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ELECTRICAL CHARACTERISTICS
T
= 25˚C unless stated otherwise.
case
GP1201FSS18
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Test Conditions
= 0V, VCE = V
V
GE
VGE = 0V, VCE = V
= ±20V, VCE = 0V
V
GE
= 60mA, VGE = V
I
C
CES
CES
, T
CE
VGE = 15V, IC = 1200A
= 15V, IC = 1200A, T
V
GE
DC
= 1ms
t
p
= 1200A
I
F
= 1200A, T
I
F
= 25V, VGE = 0V, f = 1MHz
V
CE
= 125˚C
case
-
= 125˚C
case
case
= 125˚C
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
2.6
3.3
-
-
2.2
2.3
135
20
Max.
1
25
4
6.5
3.2
4
1200
2400
2.5
2.6
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9
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