DYNEX DSF11060SG60, DSF11060SG58, DSF11060SG56, DSF11060SG55 Datasheet

DSF11060SG

DSF11060SG

Fast Recovery Diode

Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000

APPLICATIONS

■ Snubber Diode For GTO Circuits

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Recovery Charge

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55

6000
5800
5600
5500

Conditions

= V

V

RSM

RRM

+ 100V

KEY PARAMETERS

V
I

F(AV)

I

FSM

Q
t

rr

RRM

r

6000V

400A

4200A
700µC

6.0µs

Lower voltage grades available.

See Package Details for further information.

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 631 A

T

case

T

= 65oC 585 A

case

Half wave resistive load, T

T

= 65oC 420 A

case

T

= 65oC 365 A

case

Outline type code: M779b.

= 65oC 400 A

case

= 65oC 265 A

case

UnitsMax.

1/6

DSF11060SG

SURGE RATINGS

ParameterSymbol

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol Parameter

R

R

th(j-c)

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Conditions

10ms half sine; with 0% V

10ms half sine; with 50% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 12kN
with mounting compound

= 150oC

RRM, Tj

RRM, Tj

dc

Cathode dc
Double side

Single side

= 150oC

Max. Units

4.2 kA

3

88 x 10

3.4 kA

57.8 x 10

3

Min.

- 0.032

- 0.064oC/W

0.008

-

- 0.016

A2sI2t for fusingI2t

A2sI2t for fusingI2t

o

C/W

o

C/W- 0.064Anode dc

o

C/W

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range -55 125

Forward (conducting) - 135

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

Soft factor

Threshold voltage

Parameter

Conditions Max.

At 600A peak, T
At V

, T

RRM

case

= 25oC - 3.8 V

case

= 125oC-mA

6.0 -

= 1000A, diRR/dt = 100A/µs

I

F

T

= 125oC, VR = 100V

case

- 1000 µC

350 - A

1.7 - -

At T

= 125oC - 1.5 V

vj

70

o

o

kN13.210.8Clamping force-

µs

C
C

2/6

r

T

V

FRM

Slope resistance

At Tvj = 125oC - 2.9 mΩ

Forward recovery voltage di/dt = 1000A/µs, Tj = 100oC - 400 V