DS502ST
DS502ST
Rectifier Diode
Replaces January 2000 version, DS4794-3.0 DS4794-4.0 October 2001
FEATURES
■ Double Side Cooling
■ High Surge Capability
APPLICATIONS
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DS502ST14
DS502ST13
DS502ST12
DS502ST11
DS502ST10
DS502ST09
Lower voltage grades available.
1400
1300
1200
1100
1000
900
Conditions
= V
V
RSM
RRM
+ 100V
KEY PARAMETERS
V
1400V
RRM
I
866A
F(AV)
I
8000A
FSM
Outline type code: T
See Package Details for further information.
Fig. 1 Package outline
CURRENT RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS502ST14
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS502ST
CURRENT RATINGS
T
= 75oC unless otherwise stated
case
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
Mean forward current
RMS value
F
Continuous (direct) forward current
Half wave resistive load 866 A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
T
= 100oC unless otherwise stated
case
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load 556 A
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
Mean forward current
Half wave resistive load 540 A
UnitsMax.
- 1360 A
- 1236 A
- 873 A
- 721 A
UnitsMax.
I
F(RMS)
I
F
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
- 848 A
- 783 A
Half wave resistive load 350 A
- 550 A
- 465 A
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SURGE RATINGS
DS502ST
Symbol
I
FSM
2
tI
I
I
FSM
I2t
Surge (non-repetitive) forward current
2
t for fusing
Surge (non-repetitive) forward current
2
I
t for fusing A2s
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 4.5kN
with mounting compound
case
- 1/4 sine
RRM
case
= 175oC
= 175oC
dc
Cathode dc
Double side
Single side
Max. Units
6.5 kA
3
211 x 10
A2s
8.0 kA
320 x 10
3
- 0.07oC/W
o
C/W- 0.14Anode dc
o
- 0.14
0.02
-
C/W
o
C/W
- 0.04oC/W
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
CHARACTERISTICS
I
RM
V
TO
r
T
Peak reverse current
Threshold voltage
Slope resistance 0.667 mΩ
Forward (conducting) - 185
Reverse (blocking)
-
175
–55 200
o
C
o
C
o
C
3.5 5.0 kN
ParameterSymbol
At V
, T
RRM
= 175˚C - 0.84 V
At T
vj
Conditions Min. Max. Units
= 175oC-30mA
case
At Tvj = 175˚C -
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