DYNEX DCR390J85 User Manual

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FEATURES

•

Double Side Cooling

•

High Surge Capability

APPLICATIONS

•

High Power Drives

•

High Voltage Power Supplies

•

Static Switches

VOLTAGE RATINGS

Part and

Ordering

Number

Repetitive Peak

Voltages

V

DRM

and V

RRM

V

Conditions

DCR390J85
DCR390J80
DCR390J70

8500
8000
7000

T

vj

= -40°C to 125° C,

I

DRM

= I

RRM

= 100mA,

V

DRM

, V

RRM tp

= 10ms,

V

DSM

& V

RSM

=

V

DRM

& V

RRM

+ 100V

respectively

Lower voltage grades available.

ORDERING INFORMATION

When ordering, select the required part number
shown in the Voltage Ratings selection table.

For example:

DCR390J85

Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.

KEY PARAMETERS
V

DRM

8500V

I

T(AV)

387A

I

TSM

5250A
dV/dt* 1500V/µs
dI/dt 200A/us

*

Higher dV/dt selections available

Outline type code: J

(See Package Details for further information)

Fig. 1 Package outline

DCR390J85

Phase Control Thyristor

Preliminary Informat ion

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CURRENT RATINGS

T

case

= 60° C unless stated otherwise

Symbol

Parameter

Test Conditions Max. Units

Double Side Cooled

I

T(AV)

Mean on-state current Half wave resistive load 387 A

I

T(RMS)

RMS value - 608 A

I

T

Continuous (direct) on-state current - 583 A

SURGE RATINGS

Symbol

Parameter

Test Conditions Max. Units

I

TSM

Surge (non-repetitive) on-state current 10ms half sine, T

case

= 125°C 5.25 kA

I2t I2t for fusing VR = 0 0.138 MA2s

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Test Conditions Min. Max. Units

R

th(j-c)

Thermal resistance – junction to case Double side cooled DC - 0.0379 ° C/W

Single side cooled Anode DC - 0.0745 ° C/W

Cathode DC - 0.0797 ° C/W

R

th(c-h)

Thermal resistance – case to heatsink Clamping force 11.5kN Double side - 0.0072 °C/W

(with mounting compound) Single side - .0144 °C/W

T

vj

Virtual junction temperature On-state (conducting) - 135 °C

Reverse (blocking) - 125 °C

T

stg

Storage temperature range -55 125 ° C

F

m

Clamping force 10 13 kN

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DYNAMIC CHARACTERISTICS

Symbol

Parameter

Test Conditions Min. Max. Units

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

, T

case

= 125°C - 100 mA

dV/dt Max. linear rate of rise of off-state voltage To 67% V

DRM

, Tj = 125°C, gate open - 1500 V/µs

dI/dt Rate of rise of on-state current From 67% V

DRM

to 2x I

T(AV)

Repetitive 50Hz

- 100 A/µs

Gate source 30V, 10Ω,

Non-repetitive

- 200 A/µs

tr < 0.5µs, Tj = 125°C

V

T(TO)

Threshold voltage – Low l evel 50A to 400A at T

case

= 125°C - 1.162 V

Threshold voltage – High level 400A to 1600A at T

case

= 125°C - 1.3063 V

r

T

On-state slope resistance – Low level 50A to 400A at T

case

= 125°C - 3.153

mΩ

On-state slope resistance – High level 400A to 1600A at T

case

= 125°C - 2.763

mΩ

t

gd

Delay time

VD = 67% V

DRM

, gate source 30V, 10Ω

TBD TBD µs

tr = 0.5µs, Tj = 25°C

t

q

Turn-off time Tj = 125°C, VR = 200V, dI/dt = 5A/µs, 1000 1600 µs

dVDR/dt = 20V/µs linear

Q

S

Stored charge IT = 500A, Tj = 125°C, dI/dt = 5A/µs, 2000 2600 µC

I

L

Latching current Tj = 25°C, VD = 5V TBD TBD mA

I

H

Holding current

Tj = 25°C, R

G-K

= ∞, ITM = 500A, IT = 5A

TBD TBD mA

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GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

Test Conditions Max. Units

V

GT

Gate trigger voltage V

DRM

= 5V, T

case

= 25°C 1.5 V

V

GD

Gate non-trigger voltage At V

DRM, Tcase

= 125°C TBD V

I

GT

Gate trigger current V

DRM

= 5V, T

case

= 25°C 250 mA

I

GD

Gate non-trigger current V

DRM

= 5V, T

case

= 25°C TBD mA

CURVES

0

400

800

1200

1600

1.0

2.0

3.0

4.0

5.0

Instantaneous on-state voltage V

T

- (V)

Instantaneous on-state current I

T

- (A)

25°C min

25°C max

125°C min

125°C max

Fig.2 Maximum & minimum on-state characteristics

VTM EQUATION

Where A = 1.545561

B = -0.202735

VTM = A + Bln (IT) + C.IT+D.√I

T

C = 0.001865
D = 0.066158

these values are valid for Tj = 125°C for IT 50A to 1600A

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0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

0

500

1000

1500

Mean on-state current, I

T(AV)

- (A)

Mean power dissipation - (kW)

180

120

90

60

30

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0

100

200

300

400

500

600

Mean on-state current, I

T(AV)

- (A)

Maximum case temperature, T

case

(

o

C )

180

120

90

60

30

Fig.3 On-state power dissipation – sine wav e Fig.4 Maximum permissible case temperature,

double side cooled – sine wave

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0

100

200

300

400

500

600

Mean on-state current, I

T(AV)

- (A )

Maximum heatsink temperature, T

Heatsink

- (

o

C )

180

120

90

60

30

0

1

2

3

4

5

6

7

8

9

10

11

12

0

500

1000

1500

2000

Mean on-state current, I

T(AV)

- (A)

Mean power dissipation - (kW)

d.c.

180

120

90

60

30

Fig.5 Maximum permissible heatsink temperature,

double side cooled – sine wave

Fig.6 On-state power dissipation – rectangular wave

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0

10

20

30

40

50

60

70

80

90

100

110

120

130

0

100

200

300

400

500

600

700

800

900

Mean on-state current, I

T(AV)

- (A)

Maximum permissible case temperature , T

case

-

(°C)

d.c.

180

120

90

60

30

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0

100

200

300

400

500

600

700

800

Mean on-state current, I

T(AV

) - (A)

Maximum heatsik temperature T

heatsink

- (

o

C)

d.c.

180

120

90

60

30

Fig.7 Maximum permissible case temperature,

double side cooled – rectangular wave

Fig.8 Maximum permissible heatsink temperature,

double side cooled – rectangular wave

0

10

20

30

40

50

60

70

80

90

0.001

0.01

0.1110

100

Time ( s )

Thermal impedance -Z

th

( °C/kW )

Double Side Cooled

Anode Cooled

Cathode Cooled

123

4

Double side cooled

Ri (° C/kW)

2.4256

9.3503

10.6963

15.3758

Ti (s)

0.0087759

0.053099

0.4497246

1.395

Anode side cooled

Ri (° C/kW)

2.8091

9.5576

11.3564

50.6136

Ti (s)

0.0097443

0.0591913

0.4759179

6.5548

Cathode side cooled

Ri (° C/kW)

2.9507

9.4031

11.0771

56.0405

Ti (s)

0.0100391

0.0606056

0.4732916

7.228

Zth = Σ [Ri x ( 1-exp. (t/t

i

))]

[1]

∆

R

th(j-c)

Conduction

Tables show the increments of thermal resistance R

th(j-c)

when the device

operates at conduction angles other than d.c.

Double side cooling

Anode Side Cooling

Cathode Sided Cooling

∆

Zth (z)∆Zth (z)∆Zth (z)

°

sine.

rect.°sine.

rect.°sine.

rect.

180

4.43

3.01

180

4.39

2.99

180

4.37

2.98

120

5.13

4.30

120

5.07

4.26

120

5.05

4.25

90

5.89

5.03905.81

4.97905.79

4.96

60

6.58

5.81606.48

5.74606.45

5.72

30

7.12

6.67307.00

6.57306.97

6.54

15

7.36

7.13157.24

7.01157.20

6.98

Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)

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0

1

2

3

4

5

6

110100

Number of cycles

Surge current, I

TSM

- (kA)

Conditions:

Tcase = 125° C

VR =0

Pulse width = 10ms

0

1

2

3

4

5

6

7

8

9

10

11

12

13

110100

Pulse width, t

P

- (ms)

Surge current, I

TSM

- (kA)

0

0.05

0.1

0.15

0.2

0.25

0.3

I

2

t (MA

2

s)

I2t

I

TSM

Conditions:

T

case

= 125° C

VR = 0

half-sine wave

Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current

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PACKAGE DETAILS

For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

3rd ANGLE PROJECTION

IF IN DOUBT ASK

DO NOT SCALE

CATHODE

20° OFFSET (NOM.)

TO GATE TUBE

FOR PACKAGE

HEIGHT SEE TABLE

Ø1.5

ANODE

GATE

Ø33.95 NOM

Ø57.0 MAX

Ø33.95 NOM

ELECTRODES)

DEEP (IN BOTH

HOLE Ø3.60 X 2.00

Device

Maximum

Thickness

(mm)

Minimum

Thickness

(mm)

DCR880J22

34.465

33.915

DCR780J28

34.54

33.99

DCR640J42

34.77

34.22

DCR570J52

34.89

34.34

DCR490J65

35.15

34.6

DCR390J85

35.51

34.96

Clamping force: 11.5 kN ±10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outline type code: J

Fig.15 Package outline

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POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.

Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS CUSTOMER SERVICE

DYNEX SEMICONDUCTOR LTD

Tel: [phone] / 502901. Fax: [phone]
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR

RESALE. PRODUCED IN UNITED KINGDOM.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.