DYNEX DCR3640W52 User Manual

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FEATURES

•

Double Side Cooling

•

High Surge Capability

APPLICATIONS

•

High Power Drives

•

High Voltage Power Supplies

•

Static Switches

VOLTAGE RATINGS

Part and

Ordering

Number

Repetitive Peak

Voltages

V

DRM

and V

RRM

V

Conditions

DCR3640W52
DCR3640W50
DCR3640W48
DCR3640W46

5200
5000
4800
4600

T

vj

= -40°C to 125° C,

I

DRM

= I

RRM

= 300mA,

V

DRM

, V

RRM tp

= 10ms,

V

DSM

& V

RSM

=

V

DRM

& V

RRM

+ 100V

respectively

Lower voltage grades available.

ORDERING INFORMATION

When ordering, select the required part number
shown in the Voltage Ratings selection table.

For example:

DCR3640W52

Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.

KEY PARAMETERS
V

DRM

5200V

I

T(AV)

3550A

I

TSM

49000A
dV/dt* 1500V/µs
dI/dt 400A/µs

*

Higher dV/dt selections available

Outline type code: W

(See Package Details for further information)

Fig. 1 Package outline

DCR3640W52

Phase Control Thyristor

Preliminary Informat ion

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CURRENT RATINGS

T

case

= 60° C unless stated otherwise

Symbol

Parameter

Test Conditions Max. Units

Double Side Cooled

I

T(AV)

Mean on-state current Half wave resistive load 3550 A

I

T(RMS)

RMS value - 5576 A

I

T

Continuous (direct) on-state current - 5240 A

SURGE RATINGS

Symbol

Parameter

Test Conditions Max. Units

I

TSM

Surge (non-repetitive) on-state current 10ms half sine, T

case

= 125°C 49 kA

I2t I2t for fusing VR = 0 12.0 MA2s

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Test Conditions Min. Max. Units

R

th(j-c)

Thermal resistance – junction to case Double side cooled DC - 0.00631 °C/W

Single side cooled Anode DC - 0.01115 °C/W

Cathode DC - 0.01453 ° C/W

R

th(c-h)

Thermal resistance – case to heatsink Clamping force 76kN Double side - 0.0014 ° C/W

(with mounting compound) Single side - 0.0028 ° C/W

T

vj

Virtual junction temperature On-state (conducting) - 135 °C

Reverse (blocking) - 125 ° C

T

stg

Storage temperature range -55 125 °C

F

m

Clamping force 68.0 84.0 kN

SEMICONDUCTOR

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DYNAMIC CHARACTERISTICS

Symbol

Parameter

Test Conditions Min. Max. Units

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

, T

case

= 125°C - 300 mA

dV/dt Max. linear rate of rise of off-state voltage To 67% V

DRM

, Tj = 125°C, gate open - 1500 V/µs

dI/dt Rate of rise of on-state current From 67% V

DRM

to 2x I

T(AV)

Repetitive 50Hz

- 200 A/µs

Gate source 30V, 10Ω,

Non-repetitive

- 400 A/µs

tr < 0.5µs, Tj = 125°C

V

T(TO)

Threshold voltage – Low l evel 500A to 1700A at T

case

= 125°C - 0.86 V

Threshold voltage – High level 1700A to 5000A at T

case

= 125°C - 0.98 V

r

T

On-state slope resistance – Low level 500A to 1700A at T

case

= 125°C - 0.2533

mΩ

On-state slope resistance – High level 1700A to 5000A at T

case

= 125°C - 0.1886

mΩ

t

gd

Delay time

VD = 67% V

DRM

, gate source 30V, 10Ω

TBD TBD µs

tr = 0.5µs, Tj = 25°C

t

q

Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, 400 750 µs

dVDR/dt = 20V/µs linear

Q

S

Stored charge IT = 2000A, Tj = 125°C, dI/dt – 1A/µs, 2200 5500 µC

I

L

Latching current Tj = 25°C, VD = 5V TBD TBD mA

I

H

Holding current

Tj = 25°C, R

G-K

= ∞, ITM = 500A, IT = 5A

TBD TBD mA

SEMICONDUCTOR

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GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

Test Conditions Max. Units

V

GT

Gate trigger voltage V

DRM

= 5V, T

case

= 25°C 1.5 V

V

GD

Gate non-trigger voltage At V

DRM, Tcase

= 125°C TBD V

I

GT

Gate trigger current V

DRM

= 5V, T

case

= 25°C 250 mA

I

GD

Gate non-trigger current V

DRM

= 5V, T

case

= 25°C TBD mA

CURVES

0

1000

2000

3000

4000

5000

6000

7000

0.7

1.2

1.7

2.2

Instantaneous on-state voltage V

T

- (V)

Instantaneous on-state current I

T

- (A)

min 125° C

max 125°C

min 25° C

max 25°C

Fig.2 Maximum & minimum on-state characteristics

VTM EQUATION

Where A = 0.722818

B = - 0.002455

VTM = A + Bln (IT) + C.IT+D.√I

T

C = 0.000096
D = 0.010486

these values are valid for Tj = 125°C for IT 100A to 7000A

SEMICONDUCTOR

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0

1

2

3

4

5

6

7

8

9

10

11

0

1000

2000

3000

4000

Mean on-state current, I

T(AV)

- (A)

Mean power dissipation - (kW)

180

120

90

60

30

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0

1000

2000

3000

4000

5000

6000

Mean on-state current, I

T(AV)

- (A)

Maximum case temperature, T

case

(

o

C )

180

120

90

60

30

Fig.3 On-state power dissipation – sine wav e Fig.4 Maximum permissible case temperature,

double side cooled – sine wave

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0

1000

2000

3000

4000

5000

Mean on-state current, I

T(AV)

- (A)

Maximum heatsink temperature, T

Heatsink

- (

o

C )

180

120

90

60

30

0

1

2

3

4

5

6

7

8

9

10

11

12

0

1000

2000

3000

4000

5000

6000

Mean on-state current, I

T(AV)

- (A)

Mean power dissipation - (kW)

d.c.

180

120

90

60

30

Fig.5 Maximum permissible heatsink temperature,

double side cooled – sine wave

Fig.6 On-state power dissipation – rectangular wave

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0

10

20

30

40

50

60

70

80

90

100

110

120

130

0

1000

2000

3000

4000

5000

6000

7000

Mean on-state current, I

T(AV)

- (A)

Maximum permissible case temperature , T

case

- (°C)

d.c.

180

120

90

60

30

0

10

20

30

40

50

60

70

80

90

100

110

120

130

0

1000

2000

3000

4000

5000

6000

7000

Mean on-stat e c urrent, I

T(AV

) - (A )

Maximum heatsik temperature T

heatsink

- (

o

C)

d.c.

180

120

90

60

30

Fig.7 Maximum permissible case temperature,

double side cooled – rectangular wave

Fig.8 Maximum permissible heatsink temperature,

double side cooled – rectangular wave

0

2

4

6

8

10

12

14

16

0.001

0.01

0.1110

100

Time ( s )

Thermal Impedance, Z

th(j-c) -

( °C/kW)

Double Side Cooling

Anode Side Cooling

Cathode Sided Cooling

123

4

Double side cooled

Ri (° C/kW)

0.8816

1.2993

2.8048

1.3305

Ti (s)

0.0106818

0.058404

0.3584979

1.1285

Anode side cooled

Ri (° C/kW)

1.5197

3.2398

5.7622

0.6312

Ti (s)

0.0170581

0.2424644

6.013

15.364

Cathode side cooled

Ri (° C/kW)

1.4106

2.4667

6.7451

3.9054

Ti (s)

0.0158344

0.1786951

3.6201

6.196

Zth = Σ [Ri x ( 1-exp. (t/t

i

))]

[1]

∆

R

th(j-c)

Conduction

Tables show the increments of thermal resistance R

th(j-c)

when the device

operates at conduction angles other than d.c.

Double side cooling

Anode Side Cooling

Cathode Sided Cooling

∆

Zth (z)∆Zth (z)∆Zth (z)

°

sine.

rect.°sine.

rect.°sine.

rect.

180

1.00

0.67

180

0.94

0.64

180

0.95

0.65

120

1.16

0.97

120

1.08

0.91

120

1.09

0.92

90

1.33

1.13901.23

1.06901.25

1.07

60

1.48

1.31601.37

1.22601.38

1.23

30

1.61

1.51301.47

1.38301.49

1.40

15

1.66

1.61151.52

1.47151.54

1.49

Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)

SEMICONDUCTOR

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10

100

110100

Number of cycles

Surge current, I

TSM

- (kA)

Conditions:

Tcase = 125° C

VR =0

Pulse width = 10ms

0

50

100

150

110100

Pulse width, t

P

- (ms)

Surge current, I

TSM

- (kA)

0

10

20

30

I

2

t (MA

2

s)

I2t

I

TSM

Conditions:

T

case

= 125° C

VR = 0

half-sine wave

Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current

SEMICONDUCTOR

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PACKAGE DETAILS

For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

CATHODE

GATE

ANODE

3rd ANGLE PROJECTION

IF IN DOUBT ASK

DO NOT SCALE

20° OFFSET (NOM. )

TO GATE TUBE

HOLE Ø3.60 X 2.00

DEEP (IN BOTH

ELECTRODES)

Ø1.5

Ø84.6 NOM.

Ø120.0 MAX.

Ø84.6 NOM.

FOR PACKAGE HEIGHT

SEE TABLE

Device

Maximum

Thickness

(mm)

Minimum

Thickness

(mm)

DCR1594SW28

27.34

26.79

DCR1595SW42

27.57

27.02

DCR1596SW52

27.69

27.14

DCR5450W22

27.265

26.715

DCR4910W28

27.34

26.79

DCR4100W42

27.57

27.02

DCR3640W52

27.69

27.14

DCR3020W65

27.95

27.4

DCR2510W85

28.31

27.76

Lead length: 420mm

Lead terminal connector: M4 ring

Package outline type code: W

Fig.15 Package outline

SEMICONDUCTOR

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POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.

Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS CUSTOMER SERVICE

DYNEX SEMICONDUCTOR LTD

Tel: [phone] / 502901. Fax: [phone]
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR

RESALE. PRODUCED IN UNITED KINGDOM.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.