DYNEX DCR1277SD User Manual
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DCR1277SD
DCR1277SD
Phase Control Thyristor
Replaces March 1998 version, DS4552-3.3 DS4552-4.0 January 2000
APPLICATIONS
■ High Power Drives.
■ High Voltage Power Supplies.
■ DC Motor Control.
FEATURES
■ Double Side Cooling.
■ High Surge Capability.
■ High Mean Current.
■ Fatigue Free.
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
DCR1277SD36
DCR1277SD35
DCR1277SD34
DCR1277SD33
DCR1277SD32
Lower voltage grades available.
3600
3500
3400
3300
3200
Conditions
Tvj = 0˚ to 125˚C,
I
= I
, V
& V
& V
RRM
RRM tp
= 150mA,
= 10ms,
=
RSM
+ 100V
RRM
DRM
V
DRM
V
DSM
V
DRM
respectively
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt* 300V/
dI/dt 150A/µs
*Higher dV/dt selections available
Outline type code: D.
See Package Details for further information.
3600V
1259A
23750A
µs
CURRENT RATINGS
T
= 60˚C unless stated otherwise.
case
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 1259 A
Half wave resistive load 885 A
UnitsMax.
- 1977 A
- 1832 A
- 1390 A
- 1209 A
1/9
DCR1277SD
CURRENT RATINGS
T
= 80˚C unless stated otherwise.
case
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
I
T
Continuous (direct) on-state current
Half wave resistive load 995 A
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
Mean on-state current
RMS value
I
T
Continuous (direct) on-state current
Half wave resistive load 690 A
SURGE RATINGS
Symbol
I
TSM
2
tI
I
Parameter
Surge (non-repetitive) on-state current
2
t for fusing
10ms half sine; T
V
= 50% V
R
Conditions
- 1565 A
- 1420 A
- 1085 A
- 920 A
Max. Units
case
- 1/4 sine
RRM
= 125oC
19.0 kA
1.8 x 10
6
UnitsMax.
A2s
I
TSM
I2t
Surge (non-repetitive) on-state current
2
t for fusing 2.82 x 106A2s
I
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Parameter
10ms half sine; T
V
R
= 0
= 125oC
case
23.75 kA
Conditions Min. Max. Units
Double side cooled
dc
- 0.020
Single side cooled
Cathode dc - 0.044
Clamping force 22.0kN
with mounting compound
Double side
Single side
0.004
-
- 0.008
On-state (conducting) - 135
Reverse (blocking)
125
-
-55 125
o
C/W
o
C/W- 0.036Anode dc
o
C/W
o
C/W
o
C/W
o
o
o
C
C
C
2/9
-
Clamping force
20.0 24.0 kN
DYNAMIC CHARACTERISTICS
DCR1277SD
Symbol
I
RRM/IDRM
Peak reverse and off-state current At V
Parameter
RRM/VDRM
dV/dt Maximum linear rate of rise of off-state voltage To 67% V
From 67% V
dI/dt
Rate of rise of on-state current
Gate source 10V, 5Ω
tr ≤ 0.5µs, Tj = 125oC
V
T(TO)
r
T
t
gd
q
I
L
I
H
Threshold voltage At Tvj = 125oC
On-state slope resistance At Tvj = 125oC
Delay time
VD = 67% V
tr = 0.5µs, Tj = 25oC
I
= 2000A, tp = 1ms, Tj = 125˚C,
T
V
= 50V, dIRR/dt = 5A/µs,
R
VDR = 67% V
Latching current Tj = 25oC, VD = 5V
Holding current Tj = 25oC, R
Conditions Typ. Max. Units
- 150 mA
- 300 V/µs
- 100 A/µs
- 150 A/µs
DRM Tj
, T
case
= 125oC.
to 1000A
DRM
= 125oC
Repetitive 50Hz
Non-repetitive
- 0.45 mΩ
, Gate source 30V, 15Ω
DRM
, dVDR/dt = 20V/µs linear
DRM
- 2.5 µs
700 1000 mA
g-k
= ∞
200 500 mA
0.95-V
µs650500Turn-off timet
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Gate trigger voltage V
Gate trigger current
Gate non-trigger voltage At V
DRM
V
DRM
= 5V, T
= 5V, T
DRM Tcase
Peak forward gate voltage Anode positive with respect to cathode
Peak forward gate voltage Anode negative with respect to cathode
Peak reverse gate voltage
Peak forward gate current Anode positive with respect to cathode
Peak gate power See table, fig.4
Mean gate power
= 25oC
case
= 25oC
case
= 125oC
ConditionsParameterSymbol
Max. Units
4.0 V
400 mA
0.25 V
30 V
0.25 V
5V
10 A
150 W
5W
3/9
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