Diodes ZXTP07012EFF User Manual
ZXTP07012EFF
C
E
B
12V, SOT23F, PNP medium power transistor
Summary;
BV
I
V
R
P
Complementary part number ZXTN07012EFF
CEO
C(cont)
CE(sat)
CE(sat)
= 1.5W
D
> -12V
= -4A
< -75mV @ 1A
= 50m⍀
Description
This low voltage PNP transistor has been designed for applications
requiring high gain and very low saturation voltage. The SOT23F
package is pin compatible with the industry standard SOT23 footprint
but offers lower profile and higher dissipation for applications where
power density is of utmost importance.
Features
• Low profile SOT23F package
• Low saturation voltage
•High gain
• High power dissipation
E
C
Applications
• Load switches
• Battery charging
• Motor drive
Pinout - top view
Ordering information
Device Reel size
(inches)
ZXTP07012EFFTA 7 8 3000
Tape width
(mm)
Quantity
per reel
Device marking
1D1
Issue 2 - June 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
B
ZXTP07012EFF
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Continuous collector current
(c)
Peak pulse current I
Base current I
Power dissipation at T
amb
=25°C
(a)
Linear derating factor P
Power dissipation at T
amb
=25°C
(b)
Linear derating factor P
Power dissipation at T
amb
=25°C
(c)
Linear derating factor P
Power dissipation at T
amb
=25°C
(d)
Linear derating factor P
Operating and storage temperature range T
j
CBO
CEO
EBO
I
C
CM
B
, T
D
D
D
D
stg
-12 V
-12 V
-7 V
-4 A
-8 A
-1 A
0.84 W
6.72 mW/°C
1.34 W
10.72 mW/°C
1.50 W
12.0 mW/°C
2.0 W
16.0 mW/°C
-55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
(a)
(b)
(c)
(d)
R
R
R
R
⍜JA
⍜JA
⍜JA
⍜JA
149 °C/W
93 °C/W
83 °C/W
60 °C/W
Issue 2 - June 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Characteristics
ZXTP07012EFF
Issue 2 - June 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
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