Diodes ZXTP03200BZ User Manual

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Product Line o

200V PNP LOW V

Features

• BV

• Continuous current I

• V

• R

• P

• 2 Amps continuous current

• Up to 5 Amps peak current

• Very low saturation voltage

• Enhanced switching performance

> -200V

CEO

> -2V

ECO

< -160mV @ -1A

CE(sat

=130mΩ

CE(sat)

= 2.4W

D

C(cont)

= 2A

Mechanical Data

• Case: SOT-89

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.052 grams (approximate)

Diodes Incorporated

TRANSISTOR IN SOT-89

CE(sat)

ZXTP03200BZ

Applications

• DC-DC Convertors

SOT-89

Top View

Ordering Information

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTP03200BZTA 1N2 7 12 1000

Marking Information

ZXTP03200BZ

Document Number DS31902 Rev. 2 - 2

Device symbol Pin Configuration

1N2 = Product type Marking Code

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200V PNP LOW V

Diodes Incorporated

TRANSISTOR IN SOT-89

CE(sat)

ZXTP03200BZ

Maximum Ratings @T

= 25°C unless otherwise specified

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Characteristic Symbol Value Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current (Note a) Base Current Peak Pulse Current

V

CBO

V

CEO

V

EBO

I

C

I

B

I

CM

-220 V

-200 V

-7 V

-2 A

-1 A

-5 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation at TA = 25°C (Note a) Linear derating factor

Power Dissipation at TA = 25°C (Note b) Linear derating factor

Power Dissipation at TA = 25°C (Note c) Linear derating factor

Power Dissipation at TA = 25°C (Note d) Linear derating factor

Power Dissipation at TA = 25°C (Note e) Linear derating factor

Junction to Ambient (Note a) Junction to Ambient (Note b) Junction to Ambient (Note c) Junction to Ambient (Note d) Junction to Lead (Note e) Operating and Storage Temperature Range

Notes: a. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions

b. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions. c. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions. d. As (c) above measured at t<5 seconds e. Junction to lead from collector Tab. Typical

P

R R R R R

T

J, TSTG

D

JA JA JA JA

JL

1.1

8.8

1.8

14.4

2.4

19.2

4.46

35.7

38.7

309.6 117

68 51 28

3.23

-55 to +150

ZXTP03200BZ

Document Number DS31902 Rev. 2 - 2

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W

mW /°C

W

mW /°C

W

mW /°C

W

mW /°C

W

mW /°C

°C/W °C/W °C/W °C/W °C/W

°C

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200V PNP LOW V

Thermal Characteristics and Derating information

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Diodes Incorporated

TRANSISTOR IN SOT-89

CE(sat)

ZXTP03200BZ

Document Number DS31902 Rev. 2 - 2

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200V PNP LOW V

Diodes Incorporated

TRANSISTOR IN SOT-89

CE(sat)

ZXTP03200BZ

Electrical Characteristics @T

= 25°C unless otherwise specified

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Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note f) Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current Emitter Cutoff Current

Static Forward Current Transfer Ratio (Note f)

Collector-Emitter Saturation Voltage (Note f)

Base-Emitter Saturation Voltage (Note f) Base-Emitter Turn-On Voltage (Note f) Output Capacitance (Note f)

Transition Frequency Delay Time

Rise Time Storage Time Fall Time

Notes: f. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ≤ 2%

V V V V

I

CBO

I

EBO

h

V

CE(SAT)

V

BE(sat

V

BE(ON

C

CBO CER CEO EBO

FE

obo

f

T

t

d

t

T

s

T

f

-220 -245 V

-220 -225 V

-7 -8.4 V <1

-50

-0.5

nA µA

<1 -10 nA

100 100

20

195 179

50

-37

-120

-130

-160

300

5

-50

-155

-160

-260

mV mV mV mV

-940 -1100 mV

-840 -1000 mV 31 pF

105 MHz 21 ns

18 ns 680 ns 75 ns

IC = -100µA IC = -1µA, RBE ≤ 1kΩ IC = -10mA IE = -100µA

= -200V

V

CB

= -200V, T

V

CB

V

= -6V

EB

I

= -10mA, V

C

I

= -1A, V

C

= -2A, V

I

C

I

= -5A, V

C

CE CE CE

amb

= -5V

CE

= -5V = -5V = -5V

= 100°C

IC = -100mA, IB = -10mA

= -500mA, IB = -25mA

I

C

I

= -1A, IB = -100mA

C

= -2A, IB = -400mA

I

C

IC = -2A, IB= -400mV IC = -2A, V V

= -10V. f = 1MHz

CB

= -10V, IC = -100mA

V

CE

= -5V

f = 50MHz

V

= -50V, IC = -1A

CC

= -IB2 = -100mA

I

B1

ZXTP03200BZ

Document Number DS31902 Rev. 2 - 2

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Typical Characteristics

200V PNP LOW V

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Diodes Incorporated

TRANSISTOR IN SOT-89

CE(sat)

ZXTP03200BZ

Document Number DS31902 Rev. 2 - 2

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Package Outline Dimensions

200V PNP LOW V

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Diodes Incorporated

TRANSISTOR IN SOT-89

CE(sat)

ZXTP03200BZ

Suggested Pad Layout

ZXTP03200BZ

Document Number DS31902 Rev. 2 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporat ed does not assume an y liabi lity arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorpor ated products in such safety-critical, life support devices or systems.

www.diodes.com

200V PNP LOW V

LIFE SUPPORT

Diodes Incorporated

TRANSISTOR IN SOT-89

CE(sat)

ZXTP03200BZ

Document Number DS31902 Rev. 2 - 2

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