Diodes ZXTNS618MC User Manual
A
f
C
Product Line o
20V NPN LOW SATURATION TRANSISTOR AND
40V, 1A SCHOTTKY DIODE COMBINATION
Features and Benefits
NPN Transistor
• BV
• I
• Low Saturation Voltage (150mV max @ 1A)
• R
• h
Schottky Diode
• BV
• I
• Low V
• Fast switching due to Schottky barrier
Low profile 0.8mm high package for thin applications
R
θJA
6mm
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
> 20V
CEO
= 4.5A Continuous Collector Current
C
= 47mΩ for a low equivalent On-Resistance
SAT
characterized up to 6A for high current gain hold up
FE
> 40V
R
= 3A Average Peak Forward Current
FAV
< 500mV (@1A) for reduced power loss
F
efficient, 40% lower than SOT26
2
footprint, 50% smaller than TSOP6 and SOT26
DFN3020B-8
Top View
Bottom View
B1
Mechanical Data
• Case: DFN3020B-8
• Case Material: Molded Plastic, “Green” Molding Component
• Terminals: Pre-Plated NiPdAu leadframe
• Nominal package height: 0.8mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.013 grams (approximate)
Applications
• DC – DC Converters
• Charging circuits
• Mobile phones
• Motor control
• Portable applications
1
E1
NPN Transistor
Equivalent Circuit
Schottky Diode
Diodes Incorporated
K2
A2
ZXTNS618MC
K2 K2 C1 C1
K2 C1
A2 n/c E1 B1
Bottom View
Pin-Out
n/c = Not Connected internally
Pin 1
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTNS618MCTA BS1 7 8 3000
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Marking Information
BS1
ZXTNS618MC
Document Number DS31933 Rev. 4 - 2
BS1 = Product type marking code
Top view, dot denotes pin 1
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ZXTNS618MC
NPN - Maximum Ratings @ T
= 25°C unless otherwise specified
A
Parameter Symbol Limit Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
V
CBO
V
CEO
V
EBO
I
(Notes 4 and 7)
(Notes 5 and 7) 5
CM
I
I
C
B
40
20
7
12
4.5
1
V
A
NPN - Thermal Characteristics @ T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
W
mW/°C
°C/W
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
(Notes 5 & 7)
P
D
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 4 & 7)
(Notes 5 & 7) 51.0
(Notes 6 & 7) 111
R
JA
θ
(Notes 6 & 8) 73.5
Thermal Resistance, Junction to Lead (Note 9)
Operating and Storage Temperature Range
Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
R
JL
, T
T
J
STG
2
) FR4 PCB with high coverage of single sided 1oz copper.
17.1
-55 to +150
°C
ZXTNS618MC
Document Number DS31933 Rev. 4 - 2
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NPN - Thermal Characteristics
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Diodes Incorporated
ZXTNS618MC
V
CE(SAT)
10
Limited
1
0.1
0.01
Collector Cu rren t (A)
C
I
0.1 1 10
DC
1s
8sqcm 2oz Cu
One active die
Single Pulse
100ms
T
amb
10ms
1ms
100us
=25°C
VCE Collector-Emitter Voltage (V)
Safe Operating Area
8sqcm 2oz Cu
80
One active die
60
D=0.5
40
D=0.2
20
Thermal Resistance (°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
2.0
1.5
10sqcm 1oz Cu
Two active di
e
8sqcm 2oz C
One active di
1.0
0.5
0.0
Max Power Dissipati on (W )
10sqcm 1oz Cu
One active di
e
0 25 50 75 100 125 150
Temperature (°C)
Derating Curve
225
200
175
150
125
100
75
2oz copper
50
One active die
25
Thermal Resistance (°C/W)
0
0.1 1 10 100
1oz copper
One active die
1oz copper
Two active die
2oz copper
Two active die
Board Cu Area (sqcm)
u
e
Transient Thermal Impedance
Thermal Resistance v Board Area
3.5
3.0
2.5
2.0
T
=25°C
amb
T
=150°C
j max
Continuous
2oz copper
One active die
2oz copper
Two active die
1.5
1.0
Dissipati on (W)
D
0.5
P
0.0
0.1 1 10 100
1oz copper
One active die
1oz copper
Two active die
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTNS618MC
Document Number DS31933 Rev. 4 - 2
3 of 10
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