Diodes ZXTN649F User Manual
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25V NPN LOW SATURATION TRANSISTOR IN SOT23
Features
• BV
• BV
• I
• Low saturation voltage, V
• R
• 725mW Power dissipation
• h
• Complementary PNP Type: ZXTP749F
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
> 25V
CEO
> 35V forward blocking voltage
CBO
= 3A high Continuous Collector Current
C
= 77mΩ for a low equivalent On-Resistance
CE(SAT)
specified up to 6A for high current gain hold up
FE
SOT23
Top View Device Symbol
< 120mV @1A
CE(SAT)
B
Mechanical Data
• Case: SOT23
• Case Material: molded plastic, “Green” molding compound
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight 0.008 grams (approximate)
Applications
• MOSFET gate drivers
• Power switching in automotive and industrial applications
• Motor drive and control
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Diodes Incorporated
ZXTN649F
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Top View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTN649FTA 1N7 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ZXTN649F
Document number: DS31900 Rev. 3 - 2
www.diodes.com
1N7 = Product type Marking Code
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January 2013
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ZXTN649F
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
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Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
35 V
25 V
7 V
3 A
6 A
500 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
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Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
P
R
R
T
J, TSTG
θJA
θJL
D
725 mW
172
79
-55 to +150
°C/W
°C/W
°C
ESD Ratings (Note 7)
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
ZXTN649F
Document number: DS31900 Rev. 3 - 2
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January 2013
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Thermal Characteristics and Derating information
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Diodes Incorporated
ZXTN649F
V
CE(sat)
10
Limited
1
DC
1s
=25°C
100ms
10ms
1ms
100µs
100m
Single Pulse
T
Collector Current (A)
C
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10m
amb
100m 1 10
VCE Collector-Emitter Voltage (V)
Safe Operating Area
180
T
=25°C
160
140
120
100
Thermal Resistance (°C/W)
amb
D=0.5
80
60
D=0.2
40
20
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
Single Pulse
T
100
10
1
Maximum Power (W)
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
amb
=25°C
Transient Thermal Impedance
ZXTN649F
Document number: DS31900 Rev. 3 - 2
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Pulse Power Dissipation
© Diodes Incorporated
January 2013
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