Diodes ZXTN649F User Manual

A

f

Product Line o

25V NPN LOW SATURATION TRANSISTOR IN SOT23

Features

• BV

• BV

• I

• Low saturation voltage, V

• R

• 725mW Power dissipation

• h

• Complementary PNP Type: ZXTP749F

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

> 25V

CEO

> 35V forward blocking voltage

CBO

= 3A high Continuous Collector Current

C

= 77mΩ for a low equivalent On-Resistance

CE(SAT)

specified up to 6A for high current gain hold up

FE

SOT23

Top View Device Symbol

< 120mV @1A

CE(SAT)

B

Mechanical Data

• Case: SOT23

• Case Material: molded plastic, “Green” molding compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight 0.008 grams (approximate)

Applications

• MOSFET gate drivers

• Power switching in automotive and industrial applications

• Motor drive and control

C

E

Diodes Incorporated

ZXTN649F

E

C

B

Top View

Pin-Out

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN649FTA 1N7 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

ZXTN649F

Document number: DS31900 Rev. 3 - 2

www.diodes.com

1N7 = Product type Marking Code

1 of 7

January 2013

© Diodes Incorporated

A

f

Product Line o

Diodes Incorporated

ZXTN649F

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

35 V
25 V

7 V
3 A
6 A

500 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range

P
R
R

T

J, TSTG

θJA

θJL

D

725 mW
172

79

-55 to +150

°C/W
°C/W

°C

ESD Ratings (Note 7)

Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (at the end of collector lead).

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Characteristic Symbol Value Unit JEDEC Class

ZXTN649F

Document number: DS31900 Rev. 3 - 2

2 of 7

www.diodes.com

January 2013

© Diodes Incorporated

A

f

Thermal Characteristics and Derating information

Product Line o

Diodes Incorporated

ZXTN649F

V

CE(sat)

10

Limited

1

DC

1s

=25°C

100ms

10ms

1ms

100µs

100m

Single Pulse

T

Collector Current (A)

C

I

10m

amb

100m 1 10

VCE Collector-Emitter Voltage (V)

Safe Operating Area

180

T

=25°C

160

140

120

100

Thermal Resistance (°C/W)

amb

D=0.5

80

60

D=0.2

40

20

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

0.8

0.6

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

Single Pulse

T

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

amb

=25°C

Transient Thermal Impedance

ZXTN649F

Document number: DS31900 Rev. 3 - 2

3 of 7

www.diodes.com

Pulse Power Dissipation

© Diodes Incorporated

January 2013

A

f

)

)

Product Line o

Diodes Incorporated

ZXTN649F

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Static Forward Current Transfer Ratio (Note 8)

Collector-Emitter Saturation Voltage (Note 8)

Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)

Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

BV
BV
BV

I

I

h

V

CE(sat)

V

BE(sat

V

BE(on

CBO

CEO

EBO

CBO

EBO

FE

35 110 - V
25 35 - V

7 8.1 - V

- <1

50

0.5

nA
µA

- <1 50 nA

200
175
155

50

320
280
250

85

-

70

-

200

500

-

-

-

120
300

-

mV

- 900 1000 mV

- 780 850 mV

IC = 100µA
IC = 10mA
IE = 100µA

= 28V

V

CB

V

= 28V, TA = +100°C

CB

V

= 5.6V

EB

= 100mA, V

I

C

= 1A, V

I

C

I

= 2A, V

C

= 6A, V

I

C

= 1A, IB = 100mA

I

C

I

= 3A, IB = 300mA

C

CE

CE

CE

CE

= 2V
= 2V
= 2V

= 2V

IC = 1A, IB = 100mA
IC = 1A, V

CE

= 2V

ZXTN649F

Document number: DS31900 Rev. 3 - 2

4 of 7

www.diodes.com

January 2013

© Diodes Incorporated

A

f

Product Line o

Diodes Incorporated

ZXTN649F

Typical Electrical Characteristics (@T

1

Tamb=25°C

100m

IC/IB=50

(V)

10m

CE(sat)

V

1m

1m 10m 100m 1

IC Collector Current (A)

V

CE(sat)

)

300

FE

Typical Gain (h

150°C

100°C

200

25°C

100

-55°C

0
1m 10m 100m 1 10

IC Collector Current (A)

IC/IB=20

v I

IC/IB=100

C

= +25°C, unless otherwise specified.)

A

IC/IB=10

0.3

0.2

(V)

IC/IB=10

VCE=2V

CE(sat)

0.1

V

0.0
10m 100m 1

1.2

IC/IB=10

1.0

0.8

(V)

0.6

BE(sat)

V

0.4

0.2

1m 10m 100m 1

150°C

100°C

IC Collector Current (A)

V

25°C

CE(sat)

v I

-55°C

C

150°C

100°C

IC Collector Current (A)

25°C

-55°C

hFE v I

1.2

VCE=2V

1.0

25°C

0.8

C

-55°C

(V)

0.6

BE(on)

V

0.4

0.2
1m 10m 100m 1

100°C

150°C

200

180
160

140

120

100

80

60

40

Capacitance (pF)

20

0

10m 100m 1 10

V

Cobo

IC Collector Current (A)

V

ZXTN649F

Document number: DS31900 Rev. 3 - 2

BE(on)

v I

C

5 of 7

www.diodes.com

Capacitance v Voltage

v I

BE(sat)

Voltage(V)

C

Cibo

f = 1MHz

January 2013

© Diodes Incorporated

A

f

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

K

J

H

F

D

G

C

B

K1

L

M

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

Z

X

E

Dimensions Value (in mm)

C

Product Line o

Diodes Incorporated

Dim Min Max Typ

A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α

Z 2.9
X 0.8
Y 0.9
C
E

SOT23

0° 8° -

All Dimensions in mm

2.0

1.35

ZXTN649F

ZXTN649F

Document number: DS31900 Rev. 3 - 2

6 of 7

www.diodes.com

January 2013

© Diodes Incorporated

A

f

Product Line o

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

Diodes Incorporated

ZXTN649F

ZXTN649F

Document number: DS31900 Rev. 3 - 2

7 of 7

www.diodes.com

January 2013

© Diodes Incorporated