Diodes ZXTN620MA User Manual

f

p

A Product Line o

Diodes Incorporated

80V NPN LOW SATURATION TRANSISTOR

Features and Benefits

• BV

• I

• Low Saturation Voltage (185mV max @ 1A)

• R

• h

• Low profile 0.6mm high package for thin applications

• R

• 4mm

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

> 80V

CEO

= 3.5A Continuous Collector Current

C

= 68 mΩ for a low equivalent On-Resistance

SAT

specified up to 5A for high current gain hold up

FE

efficient, 60% lower than SOT23

JA

θ

2

footprint, 50% smaller than SOT23

DFN2020B-3

Top View

Bottom View

Mechanical Data

• Case: DFN2020B-3

• Case Material: Molded Plastic. “Green” Molding Compound.

• Terminals: Pre-Plated NiPdAu leadframe.

• Nominal Package Height: 0.6mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.01 grams (approximate)

Applications

• MOSFET Gate Driving

• DC–DC Converters

• Charging circuits

• Motor Control

• Power switches

B

Device Symbol

C

E

Bottom View

Pin-Out

ZXTN620MA

Ordering Information

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN620MATA SE 7 8 3000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com

Marking Information

To

SE

View

ZXTN620MA

Document Number DS31894 Rev. 5 - 2

SE = Product Type Marking code

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ZXTN620MA

Maximum Ratings @T

= 25°C unless otherwise specified

A

Parameter Symbol Limit Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current

Continuous Collector Current
Base Current

V

CBO

V

CEO

V

EBO

I
(Note 3)
(Note 4) 3.8

CM

I

I

C

B

100

80

7
5

3.5

1

V

A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 5)

Operating and Storage Temperature Range

Notes: 3. For a device surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.

4. Same as note (3), except the device is measured at t ≤ 5 sec.

5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).

(Note 3)

P

D

(Note 4)
(Note 3)

(Note 4) 51

R
R

T

J, TSTG

JA

θ

JL

1.5
12

2.45

19.6
83

16.8

-55 to +150

W

mW/°C

°C/W

°C

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Thermal Characteristics

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ZXTN620MA

V

CE(SAT)

10

Limited

1

DC

1s

100ms

0.1

Collector Current (A)
I

Single Pulse , T

C

0.01

0.1 1 10 100

amb

10ms

1ms

100us

=25°C

VCE Colle ctor-Emitter Vo ltage (V)

Safe Operating Area

10 sqcm

80

Single
1oz Cu

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

2.0

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150

Max Power Di ssi p at i o n (W )

Temperature (°C)

10 sqcm
Single
1oz Cu
T

=25°C

amb

Derating Curve

225
200
175
150
125
100

75
50
25

Thermal Resistance (°C/W)

0

0.1 1 10 100

1oz copper

2oz copper

Board Cu Area (sqcm)

Thermal Resistance v Board A rea

3.5

T

=25°C

amb

3.0

T

=150°C

j max

2.5

Continuous

2.0

1.5

1.0

Dissipat i on (W)

D

0.5

P

0.0

0.1 1 10 100

2oz copper

1oz copper

Board Cu Area (sqcm)

Power Dissipation v Board Area

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ZXTN620MA

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current

Static Forward Current Transfer Ratio (Note 6)

Collector-Emitter Saturation Voltage (Note 6)

Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance

Transition Frequency
Turn-On Time

Turn-Off Time

Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.

BV
BV
BV

I
I
I

V

CE(sat)

V

BE(on

V

BE(sat

C

CBO
CEO

EBO
CBO
EBO
CES

h

FE

obo

f

T

t

on

t

off

100 180 - V

80 110 - V

7 8.2 - V

- - 100 nA

- - 100 nA

- - 100 nA

200
300
110

60
20

-

-

-

-

-

-

450
450
170

90
30
10

15

45
145
160
240

-

900

-

-

-

-

20

60
185
200
340

-

mV

- 0.96 1.05 V

- 1.09 1.175 V

- 11.5 18 pF

100 160 - MHz

- 86 - ns

- 1128 - ns

IC = 100 µA
IC = 10 mA
IE = 100 µA
V

= 80V

CB

V

= 6V

EB

V

= 65V

CE

I

= 10mA, V

C

= 200mA, V

I

C

I

= 1A, V

C

= 1.5A, V

I

C

I

= 3A, V

C

= 5A, V

I

C

I

= 0.1A, IB = 10mA

C

I

= 0.5A, IB = 50mA

C

= 1A, IB = 20mA

I

C

I

= 1.5A, IB = 50mA

C

= 3.5A, IB = 300mA

I

C

IC = 3.5A, V

CE

CE
CE

CE

= 2V

CE

= 2V
= 2V

CE

= 2V

CE

= 2V

= 2V

= 2V

IC = 3.5A, IB = 300mA
V

= 10V. f = 1MHz

CB

= 10V, IC = 50mA,

V

CE

f = 100MHz
V

= 10V, IC = 1A

CC

= IB2 = 25mA

I

B1

ZXTN620MA

Document Number DS31894 Rev. 5 - 2

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Typical Electrical Characteristics

Tamb=25°C

100m

(V)

10m

CE(SAT)

V

IC/IB=100

IC/IB=20

IC/IB=50

IC/IB=10

(V)

V

0.25

0.20

0.15

0.10

CE(SAT)

0.05

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Diodes Incorporated

ZXTN620MA

IC/IB=50

100°C

25°C

-55°C

1m

1m 10m 100m 1 10

IC Colle ctor C urrent (A)

V

1.4

1.2

1.0

0.8

0.6

0.4

Normalised Gain

0.2

0.0
1m 10m 100m 1 10

100°C

25°C

-55°C

CE(SAT)

v I

C

VCE=2V

IC Collecto r Current (A)

hFE v I

VCE=2V

1.0

0.8

(V)

0.6

BE(ON)

V

0.4

-55°C

25°C

C

100°C

630
540
450
360
270
180
90
0

0.00
1m 10m 100m 1

IC Collecto r Current (A)

1.0

IC/IB=50

V

CE(SAT)

v I

C

)

FE

0.8

(V)

0.6

BE(SAT)

V

Typical Gain (h

0.4

1m 10m 100m 1

-55°C

25°C

100°C

IC Collecto r Current (A)

V

BE(SAT)

v I

C

0.2
1m 10m 100m 1 10

IC Colle ctor C urrent (A)

V

ZXTN620MA

Document Number DS31894 Rev. 5 - 2

BE(ON)

v I

C

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Package Outline Dimensions

A

A1

D

D2

Z

D4

E

E2

E4

e

Suggested Pad Layout

G

X

X1

C

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ZXTN620MA

A3

SEATING PLANE

L

b

e

Y1

Y

Y2

Dimensions Value (in mm)

C 1.30

G 0.24

X 0.35

X1 1.52

Y 1.09
Y1 0.47
Y2 0.50

DFN2020B-3

Dim Min Max Typ

A 0.57 0.63 0.60

A1 0 0.05 0.02
A3

⎯ ⎯

b 0.20 0.30 0.25

D 1.95 2.075 2.00
D2 1.22 1.42 1.32
D4 0.56 0.76 0.66

e

⎯ ⎯

E 1.95 2.075 2.00
E2 0.79 0.99 0.89
E4 0.48 0.68 0.58

L 0.25 0.35 0.30

Z

⎯ ⎯

All Dimensions in mm

0.152

0.65

0.225

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

Diodes Incorporated

ZXTN620MA

ZXTN620MA

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