Product Line o
Diodes Incorporated
50V NPN LOW SATURATION TRANSISTOR
Features and Benefits
• BV
• I
• Low Saturation Voltage (100mV max @ 1A)
• R
• h
• Low profile 0.6mm high package for thin applications
• R
• 4mm
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
> 50V
CEO
= 4A Continuous Collector Current
C
= 68 mΩ for a low equivalent On-Resistance
SAT
specified up to 6A for high current gain hold up
FE
efficient, 60% lower than SOT23
JA
θ
2
footprint, 50% smaller than SOT23
DFN2020B-3
Top View
Bottom View
Mechanical Data
• Case: DFN2020B-3
• Case Material: Molded Plastic. “Green” Molding Compound.
• Terminals: Pre-Plated NiPdAu leadframe.
• Nominal Package Height: 0.6mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.01 grams (approximate)
Applications
• MOSFET Gate Driving
• DC–DC Converters
• Charging circuits
• Motor Control
• Power switches
B
Device Symbol
C
E
Bottom View
Pin-Out
ZXTN619MA
Ordering Information
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTN619MATA SC 7 8 3000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
Marking Information
ZXTN619MA
Document Number DS31892 Rev. 5 - 2
To
SC
View
SC = Product Type Marking code
1 of 7
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January 2011
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Product Line o
Diodes Incorporated
ZXTN619MA
Maximum Ratings @T
= 25°C unless otherwise specified
A
Parameter Symbol Limit Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
V
CBO
V
CEO
V
EBO
I
(Note 3)
(Note 4) 4.3
CM
I
I
C
B
100
50
7
6
4
1
V
A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 5)
Operating and Storage Temperature Range
Notes: 3. For a device surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
4. Same as note (3), except the device is measured at t ≤ 5 sec.
5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
(Note 3)
P
D
(Note 4)
(Note 3)
(Note 4) 51
R
R
T
J, TSTG
JA
θ
JL
1.5
12
2.45
19.6
83
16.8
-55 to +150
W
mW/°C
°C/W
°C
ZXTN619MA
Document Number DS31892 Rev. 5 - 2
2 of 7
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January 2011
© Diodes Incorporated
Thermal Characteristics
Product Line o
Diodes Incorporated
ZXTN619MA
V
CE(SAT)
10
Limited
1
DC
1s
100ms
amb
10ms
1ms
100us
=25°C
0.1
Collector Current (A)
I
Single Pulse, T
C
0.01
0.1 1 10 100
VCE Collector-Emitter Voltage (V)
Safe Operating Area
10 sqcm
80
Single
1oz Cu
60
D=0.5
40
D=0.2
20
Thermal Resistance (°C/W)
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
2.0
10 sqcm
1.5
1.0
0.5
0.0
0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Single
1oz Cu
T
=25°C
amb
Derating Curve
225
200
175
150
125
100
75
50
25
Thermal Resistance (°C/W)
0
0.1 1 10 100
1oz copper
2oz copper
Board Cu Area (sqcm)
Thermal Resistance v B oard Area
3.5
T
=25°C
amb
3.0
T
=150°C
j max
2.5
Continuous
2.0
1.5
1.0
Dissipation (W)
D
0.5
P
0.0
0.1 1 10 100
2oz copper
1oz copper
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTN619MA
Document Number DS31892 Rev. 5 - 2
3 of 7
www.diodes.com
January 2011
© Diodes Incorporated