Diodes ZXTN618MA User Manual

A

f

p

Product Line o

Diodes Incorporated

Features and Benefits

• BV

• I

• Low Saturation Voltage (150mV max @ 1A)

• R

• h

• Low profile 0.6mm high package for thin applications

• R

• 4mm

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

> 20V

CEO

= 4.5A Continuous Collector Current

C

= 47 mΩ for a low equivalent On-Resistance

SAT

specified up to 6A for high current gain hold up

FE

efficient, 60% lower than SOT23

JA

θ

2

footprint, 50% smaller than SOT23

Top View

ZXTN618MA

20V NPN LOW SATURATION TRANSISTOR

Mechanical Data

• Case: DFN2020B-3

• Case Material: Molded Plastic. “Green” Molding Compound.

• Terminals: Pre-Plated NiPdAu leadframe.

• Nominal Package Height: 0.6mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.01 grams (approximate)

Applications

• MOSFET Gate Driving

• DC-DC Converters

• Charging circuits

• Power switches

• Motor Control

DFN2020B-3

C

B

E

Device Symbol

Bottom View

Pin-Out

Bottom View

Ordering Information

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN618MATA SB 7 8 3000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com

Marking Information

ZXTN618MA

Document Number DS31890 Rev. 5 – 2

To

SB

View

SB = Product Type Marking code

1 of 7

www.diodes.com

January 2011

A

f

θ

Product Line o

Diodes Incorporated

ZXTN618MA

Maximum Ratings @T

= 25°C unless otherwise specified

A

Parameter Symbol Limit Unit

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current

Continuous Collector Current Base Current

V

CBO

V

CEO

V

EBO

I (Note 3) (Note 4) 5

CM

I I

C

B

40 20

7

12

4.5

1

V

A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 5)

Operating and Storage Temperature Range

Notes: 3. For a device surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.

4. Same as note (3), except the device is measured at t ≤ 5 sec.

5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).

(Note 3)

P

D

(Note 4) (Note 3)

(Note 4) 51

R R

T

J, TSTG

JA

θ

JL

1.5 12

2.45

19.6 83

16.8

-55 to +150

W

mW/°C

°C/W

°C

ZXTN618MA

Document Number DS31890 Rev. 5 – 2

2 of 7

www.diodes.com

January 2011

A

f

Thermal Characteristics

Product Line o

Diodes Incorporated

ZXTN618MA

V

CE(SAT )

10

Limited

1

DC

1s

100ms

0.1

Collector Current (A) I

Single Pulse, T

C

0.01

0.1 1 10

amb

10ms

1ms

100us

=25°C

VCE Collector-Emitte r Vol ta g e (V)

Safe Operating Area

10 sqcm

80

Single oz Cu T

=25°C

amb

60

D=0.5

40

D=0.2

20

Thermal Resistance (°C/W)

0

100µ 1m 10m 100m 1 10 100 1k

Sing le Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

2.0

10 sqcm

1.5

1.0

0.5

0.0 0 25 50 75 100 125 150

Max Power Di ssi p ation (W)

Temperature (°C)

Single oz Cu T

=25°C

amb

Derating Curve

225 200 175 150 125 100

75 50 25

Thermal Resistance (°C/W)

0

0.1 1 10 100

1oz copper

2oz copper

Board Cu Area (sqcm)

Thermal Resistance v Board Area

3.5

T

=25°C

amb

3.0

T

=150°C

j max

2.5

Continuous

2.0

1.5

1.0

Dissipation (W)

D

0.5

P

0.0

0.1 1 10 100

2oz copper

1oz copper

Board Cu Area (sqcm)

Power Dissipation v Board Area

ZXTN618MA

Document Number DS31890 Rev. 5 – 2

3 of 7

www.diodes.com

January 2011