Product Line o
150V NPN LED DRIVING TRANSISTOR IN TO252
Features
• BV
• h
• I
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
> 150V
CEO
> 100 for IC = 150mA, VCE = 0.25V
FE
= 1A
C (cont)
Applications
• LED TV backlight
TO252
B
Top View Device symbol Top View
Mechanical Data
• Case: TO252
• Case material: molded Plastic. “Green” molding Compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.34 grams (Approximate)
C
E
Diodes Incorporated
ZXTN4004K
C
BE
Pin Out
Ordering Information
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTN4004KTC ZXTN4004 13 16 2,500
Notes: 1. No purposefully added lead.
2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
ZXTN4004K
Document Number: DS35458 Rev: 1 - 2
ZXTN
4004
YYWW
ZXTN4004 = Product Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 10 = 2010)
WW = Week Code (01 – 53)
1 of 5
www.diodes.com
December 2011
© Diodes Incorporated
Product Line o
Diodes Incorporated
ZXTN4004K
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 4)
Base Current
Thermal Characteristics @T
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Thermal Resistance, Junction to Leads (Note 5)
Operating and Storage Temperature Range
Notes: 3. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
P
D
R
θJA
R
θJL
T
J, TSTG
150 V
150 V
7 V
1 A
3 A
500 mA
3.8 W
33
12
-55 to +150
Thermal Characteristics and Derating Information
35
T
=25°C
amb
30
25
20
D=0.5
15
D=0.2
10
5
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/ W)
Pulse Width ( s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipat i o n (W)
Temperature (°C)
Derating Curve
°C/W
°C/W
°C
Single Pulse
T
=25°C
100
10
amb
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width ( s)
Pulse Power Dissipation
ZXTN4004K
Document Number: DS35458 Rev: 1 - 2
2 of 5
www.diodes.com
December 2011
© Diodes Incorporated