Diodes ZXTN26020DMF User Manual

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HIGH GAIN, LOW V

Features

• High Gain Low Vcesat NPN transistor

• Very Low Rcesat

• High ICM capability

• 1.5A Continuous Current Rating

• Ultra-Small Surface mount Package

• Qualified to AEC-Q101 Standards for High Reliability

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• “Green” Device (Note 2)

• ESD rating: 400V-MM, 8KV-HBM

Mechanical Data

• Case: DFN1411-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper lead frame. Solderable

per MIL-STD-202, Method 208

• Weight: 0.003 grams (approximate)

Applications

• MOSFET and IGBT gate driving

• DC-DC conversion

• Interface between low voltage IC and Load

• LED driving

Diodes Incorporated

CE(SAT)

NPN BIPOLAR TRANSISTOR

ZXTN26020DMF

Top view

Device Symbol Bottom view

Pin-out Top view

Ordering Information

Product Status Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN26020DMFTA Active Z1 7 8 3000

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ZXTN26020DMF

Documnt Number: DS31953 Rev. 2 - 1

Z1

Z1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

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θ

θ

P, P

OWER

PATIO

P(pk), P

T

RAN

N

T P

OWER

)

T

R

T T

HER

R

T

C

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ZXTN26020DMF

Maximum Ratings

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 4)
Peak Pulse Current
Base Current

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

20 V
20 V

7 V

1.5 A
4 A

0.5 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range

Notes: 3. Device mounted on FR-4 PCB with 1inch square pads.

4. Device mounted on FR-4 PCB with minimum recommended pad layout

1.2

1.0

Note 3

N (W)

0.8

P

P
R
R

T

J, TSTG

D
D
JA
JA

1,000

(W

100

1 W
380 mW
125
330

-55 to +150

Single Pulse

R (t) = r(t) *

θ

JA

R = 328°C/W

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

JA

θθJA

°C/W
°C/W

°C

SIE

0.6

10

DISSI

0.4

Note 4

D

EAK

1

0.2

0

0 20 40 60 80 100 120 140 160

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 1 Power Dissipation vs. Ambient Temperature

0.1

0.00001 0.001 0.1 10 1,000
t , PULSE DURATION TIME (s)

1

Fig. 2 Single Pulse Maximum Power Dissipation

1

D = 0.7

E

D = 0.5

AN

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

t , PULSE DURATION TIME (s)

1

R (t) = r(t) *

θ

JA

R = 328°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

Fig. 3 Transi ent Therma l R esponse

ZXTN26020DMF

Documnt Number: DS31953 Rev. 2 - 1

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(BR)

(BR)

(BR)

(BR)

)

)

)

r

C

O

CTO

R C

U

R

R

N

T

C

CUR

R

T

G

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ZXTN26020DMF

Electrical Characteristics (at T

= 25°C unless otherwise specified)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage

V

CBO

V

CEO

V

EBO

V

ECO

Collector Cutoff Current Icbo
Emitter Cutoff Current Ices

Base Cutoff Current Iebo

DC Current Gain (Note 5)

Collector-Emitter Saturation Voltage (Note 5)

Equivalent On-Resistance
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
Output Capacitance (Note 5)
Input Capacitance (Note 5)

Current Gain-Bandwidth Product
Turn-On Time

Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

h

FE

V

CE(SAT)

R

CE(SAT

V

BE(ON

V

BE(SAT

C

obo

C

ibo

f

T

t

⎯

on

t

⎯

d

t

⎯

t

⎯

off

t

⎯

s

t

⎯

f

⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

20
20

7
5

⎯ ⎯
⎯ ⎯

⎯ ⎯

300
290
270
200

⎯
⎯
⎯
⎯
⎯
⎯

—

⎯

⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯

1000

⎯
⎯
⎯
⎯

⎯
⎯
⎯
⎯
⎯

⎯

90

⎯

260

60
20

40
225
205

20

V
V
V
V

100

0.5

nA

μA
100 nA
100 nA

⎯
⎯

⎯

⎯

45

70
125
225
225
290

⎯

mV
mV
mV
mV
mV
mV

mΩ

1.2 V

1.1 V

20 pF
150 pF

⎯
⎯

⎯
⎯
⎯
⎯
⎯

MHz

ns
ns
ns
ns
ns
ns

IC = 100μA, IE = 0A
IC = 10mA, IB = 0A
IE = 100μA, IC = 0A
IE = 100μA, IB = 0A

= 20V, IE = 0A

V

CB

V

= 20V, IE = 0, TA = 125°C

CB

V

= 20V, VBE = 0V

CE

V

= 5.6V, IC = 0A

BE

= 2V, IC = 100mA

V

CE

= 2V, IC = 0.5A

V

CE

V

= 2V, IC = 1A

CE

= 2V, IC = 2A

V

CE

IC = 100mA, IB = 1mA
I

= 500mA, IB = 25mA

C

= 1A, IB = 50mA

I

C

I

= 1.5A, IB = 30mA

C

= 2A, IB = 100mA

I

C

I

= 2A, IB = 40mA

C

IC = 1A, IB = 50mA
VCE = 2V, IC = 2A
IC = 2A, IB = 100mA
VCB = 10V, f = 1.0MHz
VEB = 0.5V, f = 1.0MHz
V

= 10V, IC = 50mA,

CE

f = 100MHz

V

= 10V, IC = 1A

CC

= -IB1 = 50mA

I

B2

2.8

2.4

I = 5mA

(A)

2.0

E

1.6

1.2

B

I = 4mA

B

I = 3mA

B

I = 2mA

B

LLE

0.8

C

I,

I = 1mA

B

0.4

1,200
1,100

1,000

AIN

EN

FE

h, D

900
800
700
600
500
400
300
200

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

100

0

012 345

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 4 Typical Collector Current

vs. Collector-Emitter Voltage

0

0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)

Fig. 5 Typical DC Curr ent G ain vs. Co llector Curr ent

C

ZXTN26020DMF

Documnt Number: DS31953 Rev. 2 - 1

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C

O

CTO

R

T

TER

T

TER TURN-O

O

T

G

T

TER

TURATIO

N VOLTAG

CAPACITAN

C

G

N

N

T

H PRODU

C

T

H

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ZXTN26020DMF

1

I/I = 20

CB

1.0

E (V)

V = 5V

A
L

CE

0.8

0.1

-EMI

VOLTAGE (V)

T = 125°C

A

T = 150°C

A

T = 25°C

T = -55°C

A

LLE

0.01

SATURATION

CE(SAT)

V,

0.001

0.1 1 10 100 1,000 10,000

Fig. 6 Typical Collector-Emitter Saturation Voltage

I , COLLECTOR CURRENT (mA)

C

vs. Collector Current

1.2

I = 10

/I

E (V)

CB

1.0

0.8

T = -55°C

A

0.6

T = 25°C

A

SA

0.4

T = 150°C

A

T = 125°C

A

T = 85°C

A

0.2

A

T = 85°C

A

N V

T = -55°C

A

0.6

T = 25°C

A

0.4

T = 85°C

A

T = 125°C

0.2

T = 150°C

A

BE(ON)

V , BASE-EMI

0

0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)

Fig. 7 Typical Base-Emitter Turn-On Voltage

A

C

vs. Collector Current

1,000

f = 1MHz

100

E (pF)

C

ibo

C

10

obo

0

0.1 1 10 100 1,000 10,000

BE(SAT)

V , BASE-EMI

I , COLLECTOR CURRENT (mA)

C

Fig. 8 Typical Base-Emitter Saturation Voltage

vs. Collector Current

500

z)

V = 10V

(M

400

CE

1

0 5 10 15 20 25 30 35 40

V , REVERSE VOLTAGE (V)

R

Fig. 9 Typical Capacitance Characteristics

100

V = 20V

CBE

I = 0

C

300

10

200

DWID

-BA
AI

100

T

f,

0

0 5 10 15 20 25 30 35 40 45 50

I , COLLECTOR CURRENT (mA)

C

Fig. 10 Typica l G ain-Bandwidt h Pr oduct vs . C ollector Curr e nt

ZXTN26020DMF

Documnt Number: DS31953 Rev. 2 - 1

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CBO

I , COLLECTOR CUTOFF CURRENT (nA)

1

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 11 Collector Cutoff Current vs. Ambient Temperature

September 2009

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Package Outline Dimensions

A

A1

Suggested Pad Layout

X1

C

Y

G1

Z

X2

G2

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ZXTN26020DMF

DFN1411-3

Dim Min Max Typ

A 0.47 0.53 0.50

A1 0 0.05 0.02

b 0.25 0.35 0.30
D 1.35 1.475 1.40

D2 0.65 0.85 0.75

E 1.05 1.18 1.10
e

⎯ ⎯

L 0.225 0.325 0.275

L1

⎯ ⎯

All Dimensions in mm

Dimensions Value (in mm)

Z 1.38

G1 0.15

X

G2 0.15

X 0.95
X1 0.75
X2 0.40

Y 0.75

C 0.76

0.55

0.20

ZXTN26020DMF

Documnt Number: DS31953 Rev. 2 - 1

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2009, Diodes Incorporated

www.diodes.com

Diodes Incorporated

ZXTN26020DMF

ZXTN26020DMF

Documnt Number: DS31953 Rev. 2 - 1

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