Diodes ZXTN26020DMF User Manual
A
f
Product Line o
HIGH GAIN, LOW V
Features
• High Gain Low Vcesat NPN transistor
• Very Low Rcesat
• High ICM capability
• 1.5A Continuous Current Rating
• Ultra-Small Surface mount Package
• Qualified to AEC-Q101 Standards for High Reliability
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• “Green” Device (Note 2)
• ESD rating: 400V-MM, 8KV-HBM
Mechanical Data
• Case: DFN1411-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper lead frame. Solderable
per MIL-STD-202, Method 208
• Weight: 0.003 grams (approximate)
Applications
• MOSFET and IGBT gate driving
• DC-DC conversion
• Interface between low voltage IC and Load
• LED driving
Diodes Incorporated
CE(SAT)
NPN BIPOLAR TRANSISTOR
ZXTN26020DMF
Top view
Device Symbol Bottom view
Pin-out Top view
Ordering Information
Product Status Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTN26020DMFTA Active Z1 7 8 3000
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
Z1
Z1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
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September 2009
© Diodes Incorporated
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θ
θ
P, P
OWER
PATIO
P(pk), P
T
RAN
N
T P
OWER
)
T
R
T T
HER
R
T
C
Product Line o
Diodes Incorporated
ZXTN26020DMF
Maximum Ratings
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 4)
Peak Pulse Current
Base Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
20 V
20 V
7 V
1.5 A
4 A
0.5 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 3. Device mounted on FR-4 PCB with 1inch square pads.
4. Device mounted on FR-4 PCB with minimum recommended pad layout
1.2
1.0
Note 3
N (W)
0.8
P
P
R
R
T
J, TSTG
D
D
JA
JA
1,000
(W
100
1 W
380 mW
125
330
-55 to +150
Single Pulse
R (t) = r(t) *
θ
JA
R = 328°C/W
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
JA
θθJA
°C/W
°C/W
°C
SIE
0.6
10
DISSI
0.4
Note 4
D
EAK
1
0.2
0
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature
0.1
0.00001 0.001 0.1 10 1,000
t , PULSE DURATION TIME (s)
1
Fig. 2 Single Pulse Maximum Power Dissipation
1
D = 0.7
E
D = 0.5
AN
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
D = 0.9
t , PULSE DURATION TIME (s)
1
R (t) = r(t) *
θ
JA
R = 328°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
Fig. 3 Transi ent Therma l R esponse
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
2 of 6
www.diodes.com
September 2009
© Diodes Incorporated
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