Diodes ZXTN25100BFH User Manual

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Product Line o

100V NPN LOW SATURATION TRANSISTOR IN SOT23

Features

• BV

• BV

• BV

• I

• Low saturation voltage, V

• R

• 1.25W Power dissipation

• h

• Complementary PNP Type: ZXTP25100BFH

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

> 100V

CEO

> 170V forward blocking voltage

CEX

> 6V reverse blocking voltage

ECO

= 3A high Continuous Collector Current

C

= 67mΩ for a low equivalent On-Resistance

CE(SAT)

specified up to 3A for high current gain hold up

FE

SOT23

Top View Device Symbol

CE(SAT)

< 80mV @1A

B

Mechanical Data

• Case: SOT23

• Case Material: molded plastic, “Green” molding compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight 0.008 grams (approximate)

Applications

• Lamp relay and solenoid drivers

• General switching in automotive and industrial applications

• Motor drive and control

C

E

Diodes Incorporated

ZXTN25100BFH

E

C

B

Top View

Pin-Out

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN25100BFHTA 021 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

ZXTN25100BFH

Document number: DS33703 Rev. 2 - 2

021

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021 = Product Type Marking Code

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ZXTN25100BFH

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage
Emitter-Base Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 5)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation
Linear Derating Factor
Power Dissipation
Linear Derating Factor
Power Dissipation
Linear Derating Factor
Power Dissipation
Linear Derating Factor

(Note 5)

(Note 6)

(Note 7)

(Note 8)

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Ambient (Note 8)
Thermal Resistance, Junction to Leads (Note 9)
Operating and Storage Temperature Range

ESD Ratings (Note 10)

V

CBO

V

CEX

V

CEO

V

ECO

V

EBO

I

I

CM

P

P

P

P

R
R
R
R
R

T

J, TSTG

C

θJA

θJA

θJA

θJA

θJL

D

D

D

D

170 V
170 V
100 V

6 V
7 V
3 A
9 A

0.73

5.84

1.05

8.4

1.25

9.6

1.81

14.5
171
119
100

69

74.96

-55 to +150

mW

mW

mW

mW

°C/W
°C/W
°C/W
°C/W
°C/W

°C

Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

8. Same as note (7), except measured at t < 5secs.

measured when operating in a steady-state condition.

6. Same as note (5), except mounted on 25mm x 25mm x 1.6mm FR4 PCB with 2 oz copper.

7. Same as note (5), except mounted on 50mm x 50mm x 1.6mm FR4 PCB with 2 oz copper.

9. Thermal resistance from junction to solder-point (at the end of collector lead).

10.Refer to JEDEC specification JESD22-A114 and JESD22-A115.

ZXTN25100BFH

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Thermal Characteristics and Derating information

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ZXTN25100BFH

V

CE(sat)

10

Limited

1

DC

1s

=25°C

100ms

10ms

1ms

100µs

Single Pulse

100m

Collector Current (A)
I

T

amb

50 mm X 50mm X 1 .6mm FR4

2oz Cu

C

10m

100m 1 10 100

VCE Collector-Emitter Voltage (V)

Safe Operating Area

100

80

60

40

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

T

=25°C

amb

50 mm X 50mm X 1 .6mm FR 4

2oz Cu

D=0.5

D=0.2

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Impedance

100µ

BV

(BR)CEO

=100V

Failure may occur

in this region

10µ

1µ

T

Collector Current (A)

C

I

amb

=25°C

BV

(BR)CEV

=170V

0 20 40 60 80 100 120 140 160 180

VCE Collector-Emitter Voltage (V)

Safe Operating Area

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Single Pulse

T

=25°C

50mm X 50mm X 1.6mm FR4

amb

2oz Cu

Pulse Power Dissipation

1.4

1.2

1.0

0.8

50 mm X 50mm X 1 .6mm FR4

2oz Cu

25 mm X 25 mm X 1.6mm F R4
2oz Cu

0.6

0.4

15mm X 15mm X 1.6mm FR4

0.2

1oz Cu

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

ZXTN25100BFH

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(d)

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ZXTN25100BFH

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage
(Forward Blocking) (Note 11)

Collector-Emitter Breakdown Voltage (Note 11)

Emitter-Collector Breakdown Voltage
(Reverse Blocking) (Note 11)

Emitter-Collector Breakdown Voltage
Emitter-Base Breakdown Voltage

Collector Cut-off Current

Collector Emitter Cut-off Current

Emitter Cut-off Current

Static Forward Current Transfer Ratio (Note 11)

Collector-Emitter Saturation Voltage (Note 11)

Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)

Transition Frequency

Collector Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time

Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

BV

BV

BV

BV

BV
BV

I

I

I

h

V

CE(sat)

V

BE(sat

V

BE(on

C

CBO

CEX

CEO

ECX

ECO

EBO

CBO

CEX

EBO

FE

f

T

obo

t

t
t
t

170 220 - V

170 210 - V

100 120 - V

6 7 - V

6 8.4 - V
7 8 - V

- <1

50

20

nA

- - 100 nA

- <1 50 nA

100

50

-

-

-

-

-

200

85
20

40

100

70

200

300

-

-

55

135

80

250

-

mV

- 940 1050 mV

- 890 1000 mV

- 160 - MHz

- 9.4 20 pF

- 16 - ns

- 55 - ns

- 677 - ns

- 95 - ns

IC = 100µA

= 100µA, RBE < 1kΩ or

I

C

-1V < V

BE

< 0.25V

IC = 1mA

= 100µA, RBC < 1kΩ or

I

E

0.25V > V

> -0.25V

BC

IE = 100µA
IE = 100µA

= 136V

V

CB

= 136V, TA = +100°C

V

CB

= 136V, RBE < 1kΩ or

V

CE

-1V < V
V
I

C

I

C

I

C

I

C

I

C

I

C

I

C

< 0.25V

BE

= 5.6V

EB

= 10mA, V
= 1A, V
= 3A, V

CE

CE

= 2V

CE

= 2V

= 2V
= 0.5A, IB = 50mA
= 0.5A, IB = 10mA
= 1A, IB = 100mA
= 3A, IB = 300mA

IC = 3A, IB = 300mA
IC = 3A, V

= 100mA, V

I

C

CE

= 2V

CE

= 5V,

f = 100MHz
V

= 10V, f = 1MHz

CB

= 10V, IC = 0.5A,

V

CC

= -IB2 = 50mA

I

B1

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Typical Electrical Characteristics (@T

1

Tamb=25°C

IC/IB=100

(V)

100m

CE(SAT)

V

10m

1m 10m 100m 1 10

1.6

1.4

1.2

1.0

0.8

0.6

0.4

Normalised Gain

0.2

0.0
1m 10m 100m 1 10

IC Collector Current (A)

V

CE(SAT)

150°C

100°C

25°C

-55°C

v I

C

IC Collector Current (A)

hFE v I

C

= +25°C, unless otherwise specified.)

A

0.5

IC/IB=10

0.4

0.3

(V)

0.2

CE(SAT)

V

0.1

0.0
10m 100m 1

1.2

IC/IB=10

FE

1.0

0.8

(V)

0.6

BE(SAT)

V

0.4

1m 10m 100m 1

)

Typical Gain (h

IC/IB=20

IC/IB=10

VCE=2V

IC/IB=50

350
325
300
275
250
225
200
175
150
125
100
75
50
25
0

150°C

100°C

25°C

IC Collector Current (A)

V

CE(SAT)

25°C

v I

-55°C

C

100°C

150°C

IC Collector Current (A)

V

BE(SAT)

v I

C

-55°C

1.0

0.8

VCE=2V

-55°C

25°C

(V)

0.6

BE(ON)

V

0.4

0.2
1m 10m 100m 1

100°C

150°C

IC Collector Current (A)

V

ZXTN25100BFH

Document number: DS33703 Rev. 2 - 2

BE(ON)

v I

C

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

K

J

H

F

D

G

C

B

K1

L

M

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

Z

X

E

Dimensions Value (in mm)

C

Z 2.9
X 0.8
Y 0.9
C
E

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Dim Min Max Typ

A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α

SOT23

0° 8° -

All Dimensions in mm

2.0

1.35

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

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ZXTN25100BFH

ZXTN25100BFH

Document number: DS33703 Rev. 2 - 2

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