Product Line o
100V NPN LOW SATURATION TRANSISTOR IN SOT23
Features
• BV
• BV
• BV
• I
• Low saturation voltage, V
• R
• 1.25W Power dissipation
• h
• Complementary PNP Type: ZXTP25100BFH
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
> 100V
CEO
> 170V forward blocking voltage
CEX
> 6V reverse blocking voltage
ECO
= 3A high Continuous Collector Current
C
= 67mΩ for a low equivalent On-Resistance
CE(SAT)
specified up to 3A for high current gain hold up
FE
SOT23
Top View Device Symbol
CE(SAT)
< 80mV @1A
B
Mechanical Data
• Case: SOT23
• Case Material: molded plastic, “Green” molding compound
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight 0.008 grams (approximate)
Applications
• Lamp relay and solenoid drivers
• General switching in automotive and industrial applications
• Motor drive and control
C
E
Diodes Incorporated
ZXTN25100BFH
E
C
B
Top View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTN25100BFHTA 021 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ZXTN25100BFH
Document number: DS33703 Rev. 2 - 2
021
www.diodes.com
021 = Product Type Marking Code
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December 2012
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Product Line o
Diodes Incorporated
ZXTN25100BFH
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage
Emitter-Base Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 5)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
Power Dissipation
Linear Derating Factor
Power Dissipation
Linear Derating Factor
Power Dissipation
Linear Derating Factor
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Ambient (Note 8)
Thermal Resistance, Junction to Leads (Note 9)
Operating and Storage Temperature Range
ESD Ratings (Note 10)
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
I
CM
P
P
P
P
R
R
R
R
R
T
J, TSTG
C
θJA
θJA
θJA
θJA
θJL
D
D
D
D
170 V
170 V
100 V
6 V
7 V
3 A
9 A
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
171
119
100
69
74.96
-55 to +150
mW
mW
mW
mW
°C/W
°C/W
°C/W
°C/W
°C/W
°C
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
8. Same as note (7), except measured at t < 5secs.
measured when operating in a steady-state condition.
6. Same as note (5), except mounted on 25mm x 25mm x 1.6mm FR4 PCB with 2 oz copper.
7. Same as note (5), except mounted on 50mm x 50mm x 1.6mm FR4 PCB with 2 oz copper.
9. Thermal resistance from junction to solder-point (at the end of collector lead).
10.Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN25100BFH
Document number: DS33703 Rev. 2 - 2
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December 2012
© Diodes Incorporated
Thermal Characteristics and Derating information
Product Line o
Diodes Incorporated
ZXTN25100BFH
V
CE(sat)
10
Limited
1
DC
1s
=25°C
100ms
10ms
1ms
100µs
Single Pulse
100m
Collector Current (A)
I
T
amb
50 mm X 50mm X 1 .6mm FR4
2oz Cu
C
10m
100m 1 10 100
VCE Collector-Emitter Voltage (V)
Safe Operating Area
100
80
60
40
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
T
=25°C
amb
50 mm X 50mm X 1 .6mm FR 4
2oz Cu
D=0.5
D=0.2
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
100µ
BV
(BR)CEO
=100V
Failure may occur
in this region
10µ
1µ
T
Collector Current (A)
C
I
amb
=25°C
BV
(BR)CEV
=170V
0 20 40 60 80 100 120 140 160 180
VCE Collector-Emitter Voltage (V)
Safe Operating Area
100
10
1
Maximum Power (W)
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Single Pulse
T
=25°C
50mm X 50mm X 1.6mm FR4
amb
2oz Cu
Pulse Power Dissipation
1.4
1.2
1.0
0.8
50 mm X 50mm X 1 .6mm FR4
2oz Cu
25 mm X 25 mm X 1.6mm F R4
2oz Cu
0.6
0.4
15mm X 15mm X 1.6mm FR4
0.2
1oz Cu
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
ZXTN25100BFH
Document number: DS33703 Rev. 2 - 2
www.diodes.com
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December 2012
© Diodes Incorporated