Diodes ZXTN25060BFH User Manual

ZXTN25060BFH
60V, SOT23, NPN medium power transistor

Summary

BV

> 150V

CEX

BV

> 60V

CEO

BV

> 6V

ECO

I

= 3.5A

C(cont)

V

R

P

Complementary part number ZXTP25060BFH

< 65 mV @ 1A

CE(sat)

= 43 m⍀

CE(sat)

= 1.25W

D

Description

Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 150V forward blocking voltage

Applications

• Lamp, relay and solenoid drivers

• General switching in automotive and industrial applications

• Motor drive and control

Ordering information

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

C

B

E

E

C

B

Pinout - top view

ZXTN25060BFHTA 7 8 3,000

Device marking

019

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© Zetex Semiconductors plc 2006

ZXTN25060BFH

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage (forward blocking) V

Collector-emitter voltage V

Emitter-collector voltage (reverse blocking) V

Emitter-base voltage V

Continuous collector current

(b)

Peak pulse current I

Power dissipation at T

=25°C

A

(a)

Linear derating factor

Power dissipation at T

=25°C

A

(b)

Linear derating factor

Power dissipation at T

=25°C

A

(c)

Linear derating factor

Power dissipation at T

=25°C

A

(d)

Linear derating factor

CBO

CEX

CEO

ECO

EBO

I

C

CM

P

D

P

D

P

D

P

D

150 V

150 V

60 V

6V

7V

3.5 A

10 A

0.73

5.84

1.05

8.4

1.25

9.6

1.81

14.5

W

mW/°C

W

mW/°C

W

mW/°C

W

mW/°C

Operating and storage temperature range T

j

, T

stg

- 55 to 150 °C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

Junction to ambient

Junction to ambient

Junction to ambient

NOTES:

(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.

(a)

(b)

(c)

(d)

R

R

R

R

⍜JA

⍜JA

⍜JA

⍜JA

171 °C/W

119 °C/W

100 °C/W

69 °C/W

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© Zetex Semiconductors plc 2006

Characteristics

ZXTN25060BFH

Issue 1 - March 2006 3 www.zetex.com

© Zetex Semiconductors plc 2006

ZXTN25060BFH

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown

BV

CBO

150 190 V IC = 100␮A

voltage

Collector-emitter breakdown
voltage (forward blocking)

Collector-emitter breakdown
voltage (base open)

Emitter-collector
breakdown voltage (reverse

BV

BV

BV

CEX

CEO

ECX

150 190 IC = 100␮A, RBE ⱕ 1k⍀ or

-1V < V

60 80 V

68 VI

I

C

E

BE

= 10mA

= 100␮A, RBC ⱕ 1k⍀ or

0.25V > V

blocking)

Emitter-collector

BV

ECO

67 VI

= 100␮A,

E

breakdown voltage (base
open)

Emitter-base breakdown

BV

EBO

78 VI

= 100␮A

E

voltage

Collector cut-off current I

Collector-emitter cut-off

CBO

I

CEX

current

Emitter cut-off current I

Collector-emitter saturation

EBO

V

CE(sat)

voltage

Base-emitter saturation

V

BE(sat)

voltage

Base-emitter turn-on

V

BE(on)

voltage

Static forward current

h

FE

transfer ratio

Transition frequency f

Output capacitance C

Turn-on time t

Turn-off time t

NOTES:

(*) Measured under pulsed conditions. Pulse width

T

OBO

(on)

(off)

100 200 300

90 180

25 40

ⱕ 300␮s; duty cycle ⱕ2%.

<1 50

20

-100nA

<1 50 nA V

33 40 mV

73 95 mV

50 65 mV

150 175 mV

960 1050 mV

865 950 mV

nA␮AV

CB

V

CB

= 120V
= 120V, T

VCE = 120V; RBE ⱕ 1k⍀ or

-1V < V

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

I

C

BE

= 5.6V

EB

= 0,5A, IB = 50mA

= 0,5A, IB = 10mA

= 1A, IB = 100mA

= 3.5A, IB = 350mA

= 3.5A, IB = 350mA

= 3.5A, VCE = 2V

= 10mA, VCE = 2V

= 1A, VCE = 2V

= 3.5A, VCE = 2V

185 MHz IC = 100mA, VCE = 5V

= 100MHz

f

11.5 20 pF

34 ns V

566 ns

= 10V, f = 1MHz

V

CB

= 10V. IC = 500mA,

CC

= IB2= 50mA.

I

B1

< 0.25V

(*)

> -0.25V

BC

amb

< 0.25V

= 100°C

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

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© Zetex Semiconductors plc 2006

Typical characteristics

ZXTN25060BFH

Issue 1 - March 2006 5 www.zetex.com

© Zetex Semiconductors plc 2006

Package outline - SOT23

L

ZXTN25060BFH

H

N

D

G

3 leads

M

B

A

C

K

F

Dim. Millimeters Inches Dim. Millimeters Inches

Min. Max. Min. Max. Min. Max. Max. Max.

A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020

B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004

C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985

D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025

F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM

G 1.90 NOM 0.075 NOM - - - - -

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Europe

Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany

Telefon: [phone]
Fax: [phone]
[e-mail]

For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

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USA

Telephone: [phone]
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[e-mail]

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© Zetex Semiconductors plc 2006