Diodes ZXTN25040DFL User Manual

ZXTN25040DFL

C

E

B

40V, SOT23, NPN low power transistor

Summary

BV

> 130V

CEX

BV

> 40V

CEO

BV

> 6V

ECO

I

= 1.5A

C(cont)

V

R

P

Complementary part number ZXTP25040DFL

Description

Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

< 85mV @ 1A

CE(sat)

= 59m⍀

CE(sat)

= 350mW

D

Features

• High peak current

• Low saturation voltage

• 130V forward blocking voltage

• 6V reverse blocking voltage

Applications

• MOSFET and IGBT gate driving

• DC-DC conversion

• LED driving

• Interface between low voltage IC's and loads

Ordering information

Device Reel size

(inches)

ZXTN25040DFLTA 7 8 3000

Tape width

(mm)

Quantity per reel

Device marking

E

C

B

Pinout - top view

1B7

Issue 3 - March 2008 1 www.zetex.com

ZXTN25040DFL

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage (forward blocking) V

Collector-emitter voltage V

Emitter-collector voltage (reverse blocking) V

Emitter-base voltage V

Continuous collector current

(a)

Base current I

Peak pulse current I

Power dissipation at T

amb

= 25°C

(a)

CBO

CEX

CEO

ECO

EBO

I

C

B

CM

P

D

130 V

40 V

6V

7V

1.5 A

0.5 A

6A

350 mW

Linear derating factor 2.8 mW/°C

Operating and storage temperature range T

j

, T

stg

-55 to 150 °C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

(a)

R

⍜JA

357 °C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.

Issue 3 - March 2008 2 www.zetex.com

Characteristics

ZXTN25040DFL

Issue 3 - March 2008 3 www.zetex.com