Diodes ZXTN25040DFH User Manual

A

f

Product Line o

40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23

Features and Benefits

• BV

• I

• Low Saturation Voltage V

• R

• h

• High h

• 1.25W power dissipation

• 130V forward blocking voltage

• 6V reverse blocking voltage

• Complementary part number ZXTP25040DFH

• “Lead-Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

> 40V

CEO

= 4A Continuous Collector Current

C

= 35mΩ

CE(sat)

characterised up to 10A

FE

min 300 @ 1A

FE

CE(sat)

SOT23

< 55mV @ 1A

Mechanical Data

• Case: SOT23

• Case material: Molded Plastic. “Green” Molding Compound

(Note 2) UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,

Method 208

• Weight: 0.008 grams (Approximate)

Applications

• MOSFET gate drivers

• Power switches

• Motor control

• DC fans

• DC-DC converters

Diodes Incorporated

ZXTN25040DFH

Top View

Device Symbol

Top View

Pin Configuration

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN25040DFHTA 1A4 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc‘s “Green” Policy can be found on our website at https://www.diodes.com/

3. Devices with lot number starting from PID0155145 (March 2010) are “Green” products.

Marking Information

ZXTN25040DFH

Document number: DS33697 Rev. 2 - 2

1A4

www.diodes.com

1A4 = Product Type Marking Code

1 of 7

January 2012

© Diodes Incorporated

A

f

Product Line o

Diodes Incorporated

ZXTN25040DFH

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current (Note 6)
Peak Pulse Current
Base Current

V

CBO

V

CEX

V

CEO

V

ECO

V

EBO

I

C

I

CM

I

B

130 V
130 V

40 V

6 V
7 V
4 A

10 A

1 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

0.73

5.84

1.05

8.4

1.25

9.6

1.81

14.5
171

W

mW/°C

°C/W

Power Dissipation
Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Note 4)
(Note 5)
(Note 6)

P

D

-

(Note 7)
(Note 4)

(Note 5) 119
(Note 6) 100

R

θJA

(Note 7) 69
Thermal Resistance, Junction to Lead (Note 8)
Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

7. As note 6 above, measured at t < 5 seconds

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

R

T

J, TSTG

θJL

74.95

-55 to +150

°C/W

°C

ZXTN25040DFH

Document number: DS33697 Rev. 2 - 2

2 of 7

www.diodes.com

January 2012

© Diodes Incorporated

A

f

Typical Thermal Characteristics

Product Line o

Diodes Incorporated

ZXTN25040DFH

V

CE(sat)

Limited

10

1

DC

1s

100m

Single Pulse

Collector Curr ent (A)
I

T

C

10m

amb

100m 1 10

100ms

10ms

=25°C

50mmX50mm FR4
2oz Cu

1ms

100µs

VCE Collector-Emitter Voltage (V)

Safe Operating Area

100

T

=25°C

amb

50mm X 50mm FR4

80

2oz Cu

60

D=0.5

40

D=0.2

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Puls e Width (s )

Single Pulse

D=0.05

D=0.1

1m

Failu r e may occ ur

in this region

100µ

BV

=40V

(BR)CEO

10µ

1µ

BV

=130V

T

Collector Current (A)

C

I

=25°C

amb

0 20 40 60 80 100 120 140

(BR)CEX

VCE Collector-Emitter Voltage (V)

Safe Operating Area

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Puls e Width (s)

Single Pulse

T

=25°C

amb

50mmX50 mm FR4

2oz Cu

Transient Thermal Impedance

Pulse Power Dissipation

1.4

1.2

1.0

0.8

50mmX50mm F R4
2oz Cu

25mmX 25mm FR4
2oz Cu

0.6

15mmX 15mm FR4

0.4

1oz Cu

0.2

0.0

0 20 40 60 80 100 120 140 160

Max Power Dissipati on (W)

Temperature (°C)

Derating Curve

ZXTN25040DFH

Document number: DS33697 Rev. 2 - 2

3 of 7

www.diodes.com

January 2012

© Diodes Incorporated