Diodes ZXTN25040DFH User Manual

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40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23

Features and Benefits

• BV

• I

• Low Saturation Voltage V

• R

• h

• High h

• 1.25W power dissipation

• 130V forward blocking voltage

• 6V reverse blocking voltage

• Complementary part number ZXTP25040DFH

• “Lead-Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

> 40V

CEO

= 4A Continuous Collector Current

C

= 35mΩ

CE(sat)

characterised up to 10A

FE

min 300 @ 1A

FE

CE(sat)

SOT23

< 55mV @ 1A

Mechanical Data

• Case: SOT23

• Case material: Molded Plastic. “Green” Molding Compound

(Note 2) UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,

Method 208

• Weight: 0.008 grams (Approximate)

Applications

• MOSFET gate drivers

• Power switches

• Motor control

• DC fans

• DC-DC converters

Diodes Incorporated

ZXTN25040DFH

Top View

Device Symbol

Top View

Pin Configuration

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN25040DFHTA 1A4 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc‘s “Green” Policy can be found on our website at https://www.diodes.com/

3. Devices with lot number starting from PID0155145 (March 2010) are “Green” products.

Marking Information

ZXTN25040DFH

Document number: DS33697 Rev. 2 - 2

1A4

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1A4 = Product Type Marking Code

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ZXTN25040DFH

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage Collector-Emitter Voltage (Forward Blocking) Collector-Emitter Voltage Emitter-Collector Voltage (Reverse Blocking) Emitter-Base Voltage Continuous Collector Current (Note 6) Peak Pulse Current Base Current

V

CBO

V

CEX

V

CEO

V

ECO

V

EBO

I

C

I

CM

I

B

130 V 130 V

40 V

6 V 7 V 4 A

10 A

1 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

0.73

5.84

1.05

8.4

1.25

9.6

1.81

14.5 171

W

mW/°C

°C/W

Power Dissipation Linear Derating Factor

Thermal Resistance, Junction to Ambient

(Note 4) (Note 5) (Note 6)

P

D

-

(Note 7) (Note 4)

(Note 5) 119 (Note 6) 100

R

θJA

(Note 7) 69 Thermal Resistance, Junction to Lead (Note 8) Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

7. As note 6 above, measured at t < 5 seconds

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

R

T

J, TSTG

θJL

74.95

-55 to +150

°C/W

°C

ZXTN25040DFH

Document number: DS33697 Rev. 2 - 2

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Typical Thermal Characteristics

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ZXTN25040DFH

V

CE(sat)

Limited

10

1

DC

1s

100m

Single Pulse

Collector Curr ent (A) I

T

C

10m

amb

100m 1 10

100ms

10ms

=25°C

50mmX50mm FR4 2oz Cu

1ms

100µs

VCE Collector-Emitter Voltage (V)

Safe Operating Area

100

T

=25°C

amb

50mm X 50mm FR4

80

2oz Cu

60

D=0.5

40

D=0.2

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Puls e Width (s )

Single Pulse

D=0.05

D=0.1

1m

Failu r e may occ ur

in this region

100µ

BV

=40V

(BR)CEO

10µ

1µ

BV

=130V

T

Collector Current (A)

C

I

=25°C

amb

0 20 40 60 80 100 120 140

(BR)CEX

VCE Collector-Emitter Voltage (V)

Safe Operating Area

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

Puls e Width (s)

Single Pulse

T

=25°C

amb

50mmX50 mm FR4

2oz Cu

Transient Thermal Impedance

Pulse Power Dissipation

1.4

1.2

1.0

0.8

50mmX50mm F R4 2oz Cu

25mmX 25mm FR4 2oz Cu

0.6

15mmX 15mm FR4

0.4

1oz Cu

0.2

0.0

0 20 40 60 80 100 120 140 160

Max Power Dissipati on (W)

Temperature (°C)

Derating Curve

ZXTN25040DFH

Document number: DS33697 Rev. 2 - 2

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Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage Collector-emitter breakdown voltage

(forward blocking) Collector-Emitter Breakdown Voltage

(base open) (Note 9) Emitter-Base Breakdown Voltage

Emitter-collector breakdown voltage (reverse blocking)

Emitter-collector breakdown voltage (base open)

Collector-base Cut-off Current

Collector-emitter Cut-off Current Emitter-base Cut-off Current

BV BV

BV

I

CBO

I

CEX

I

EBO

CBO

CEX

CEO

EBO

ECX

ECO

ON CHARACTERISTICS (Note 9)

Static Forward Current Transfer Ratio

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage Base-Emitter On Voltage

V

CE(sat)

V

BE(sat

V

BE(on

h

FE

SMALL SIGNAL CHARACTERISTICS (Note 9) Transition Frequency Collector Output Capacitance

Delay time Rise time Storage time Fall time

Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

f

T

C

obo

t

d

t

s

t

f

130 170 - V 130 170 - V

40 63 - V

7 8.3 - V 6 7.4 - V

6 7.4 - V

-

<1

50

-

20

- - 100 nA

- <1 50 nA

300 300

30

-

450 450

60 10

45 120 135 140

900

-

55 210 210 190

- 960 1050 mV

- 840 950 mV

- 190 - MHz

- 11.7 20 pF

- 64 - ns

- 108 -

- 428 -

- 130 -

IC = 100µA

= 100µA; RBE < 1kΩ or

I

C

-1V < V IC = 10mA IE = 100µA

= 100µA; RBC < 1kΩ or

I

E

-0.25V < V I

= 100µA;

E

V

nA µA

CB

V

CB

V

CE

-1V < V VEB = 5.6V

I

= 10mA, V

C

= 1A, V

I

C

I

= 4A, V

C

= 10A, V

I

C

I

= 1A, IB = 100mA

C

I

= 1A, IB = 10mA

mV

C

= 2A, IB = 40mA

I

C

I

= 4A, IB = 400mA

C

IC = 4A, IB = 400mA IC = 4A, V

= 50mA, VCE = 10V,

I

C

f = 100MHz VCB = 10V, f = 1MHz

V

ns ns ns

CC

= 1A,

I

C

I

= IB2 = 10mA

B1

< 0.25V

BE

< 0.25V

BC

= 100V = 100V, TA = 100°C = 100V; RBE < 1kΩ or

< 0.25V

BE

= 2V

CE

= 2V

CE

= 2V

CE

= 2V

CE

= 2V

CE

= 10V,

ZXTN25040DFH

Document number: DS33697 Rev. 2 - 2

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Typical Electrical Characteristics

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ZXTN25040DFH

1

Tamb=25°C

IC/IB=100

100m

(V)

10m

CE(SAT)

V

1m

1m 10m 100m 1 10

IC/IB=20

IC/IB=10

IC Colle cto r C urrent (A)

V

1.6

1.4

1.2

1.0

0.8

0.6

0.4

Normalised Gain

0.2

0.0 1m 10m 100m 1 10

150°C

100°C

25°C

-55°C

CE(SAT)

v I

C

VCE=2V

IC Collector Curre nt (A)

hFE v I

C

IC/IB=50

825 750 675 600 525 450 375 300 225 150 75 0

0.7

IC/IB=10

0.6

0.5

0.4

(V)

0.3

CE(SAT)

0.2

V

0.1

0.0 10m 100m 1 10

150°C

100°C

25°C

-55°C

IC Colle cto r C urrent (A)

V

1.2

IC/IB=10

FE

1.0

0.8

(V)

0.6

BE(SAT)

V

0.4

1m 10m 100m 1 10

)

Typical Gain (h

CE(SAT)

25°C

v I

-55°C

C

100°C

150°C

IC Colle cto r C urrent (A)

V

BE(SAT)

v I

C

1.0

0.8

VCE=2V

25°C

-55°C

(V)

0.6

BE(ON)

V

0.4

0.2 1m 10m 100m 1 10

100°C

150°C

IC Colle cto r C urrent (A)

V

ZXTN25040DFH

Document number: DS33697 Rev. 2 - 2

BE(ON)

v I

C

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Package Outline Dimensions

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e

e1

ZXTN25040DFH

L1

E1

A

L

A1

c

D

Dim. Millimeters Inches Dim. Millimeters Inches

Min. Max. Min. Max. Min. Max. Min. Max.

A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM

A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104

b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055

c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236

D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024

e 0.95 NOM 0.037 NOM - - - - -

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Suggested Pad Layout

0.95

0.037

2.0

0.079

0.9

0.035

0.8

0.031

ZXTN25040DFH

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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ZXTN25040DFH

Document number: DS33697 Rev. 2 - 2

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