Diodes ZXTN25020DFL User Manual

ZXTN25020DFL 20V, SOT23, NPN low power transistor

Summary

BV

> 100V

CEX

BV

> 20V

CEO

BV

> 5V

ECO

I

= 2A

C(cont)

I

= 8A

CM

V

R

P

Complementary part number ZXTP25020DFL

< 70mV @ 1A

CE(sat)

= 55m⍀

CE(sat)

= 350mW

D

Description

Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Features

• High peak current

• Low saturation voltage

• 100V forward blocking voltage

Applications

• MOSFET and IGBT gate driving

• DC-DC conversion

• LED driving

• Interface between low voltage IC's and loads

Ordering information

Device Reel size

(inches)

ZXTN25020DFLTA 7 8 3,000

Tape width

(mm)

Quantity per reel

C

B

E

C

B

Pinout - top view

Device marking

1A1

Issue 4 - January 2007 1 www.zetex.com

ZXTN25020DFL

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage (forward blocking) V

Collector-emitter voltage V

Emitter-collector voltage (reverse blocking) V

Emitter-base voltage V

Continuous collector current

(a)

Base current I

Peak pulse current I

Power dissipation at T

amb

=25°C

(a)

CBO

CEX

CEO

ECO

EBO

I

C

B

CM

P

D

100 V

20 V

5V

7V

2A

500 mA

8A

350 mW

Linear derating factor 2.8 mW/°C

Operating and storage temperature range T

j

, T

stg

-55 to 150 °C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

(a)

R

⍜JA

357 °C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.

Issue 4 - January 2007 2 www.zetex.com

Characteristics

ZXTN25020DFL

Issue 4 - January 2007 3 www.zetex.com