Diodes ZXTN25012EFL User Manual

ZXTN25012EFL 12V, SOT23, NPN low power transistor

Summary

BV

h

I

V

R

P

> 12V

CEO

> 4.5V

ECO

> 500

FE

= 2A

C(cont)

CE(sat)

= 350mW

D

< 65 mV @ 1A

= 46 m⍀

Description

Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Features

• High peak current

• Low saturation voltage

• 6V reverse blocking voltage

Applications

• MOSFET and IGBT gate driving

C

B

E

• DC-DC conversion

• LED driving

• Interface between low voltage IC's and load

Ordering information

Device Reel size

(inches)

ZXTN25012EFLTA 7 8 3000

Tape width

(mm)

Quantity

per reel

C

B

Pinout - top view

Device marking

1B6

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ZXTN25012EFL

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-collector voltage V

Emitter-base voltage V

Continuous collector current

(a)

Base current I

Peak pulse current I

Power dissipation @ T

amb

=25°C

(a)

CBO

CEO

ECO

EBO

I

C

B

CM

P

D

20 V

12 V

4.5 V

7V

2A

500 mA

15 A

350 mW

Linear derating factor 2.8 mW/°C

Operating and storage temperature range T

j

, T

stg

- 55 to 150 °C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

(a)

R

⍜JA

357 °C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.

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Characteristics

ZXTN25012EFL

Issue 2 - January 2007 3 www.zetex.com