ZXTN25012EFH
12V, SOT23, NPN medium power transistor
Summary
BV
BV
h
I
V
R
P
CEO
ECX
> 500
FE
C(cont)
CE(sat)
CE(sat)
= 1.25W
D
> 12V
> 6V
= 6A
< 32mV @ 1A
= 23m⍀
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
• High power dissipation SOT23 package
• High peak current
• Very high gain
• Low saturation voltage
• 6V reverse blocking voltage
Applications
• MOSFET gate drivers
• Power switches
• Motor control
•DC fans
• DC-DC converters
Ordering information
Device Reel size
(inches)
ZXTN25012EFHTA 7 8 3,000
Tape width
(mm)
Quantity per reel
Device marking
1C3
Issue 3 - March 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXTN25012EFH
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-collector voltage (reverse blocking) V
Emitter-base voltage V
Continuous collector current
(c)
Base current I
Peak pulse current I
Power dissipation at T
amb
=25°C
(a)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)
Linear derating factor
Power dissipation at T
amb
=25°C
(c)
Linear derating factor
Power dissipation at T
amb
=25°C
(d)
Linear derating factor
CBO
CEO
ECX
EBO
I
C
B
CM
P
D
P
D
P
D
P
D
20 V
12 V
6V
7V
6A
1A
15 A
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
Operating and storage temperature range T
j
, T
stg
- 55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
(a)
(b)
(c)
(d)
R
R
R
R
⍜JA
⍜JA
⍜JA
⍜JA
171 °C/W
119 °C/W
100 °C/W
69 °C/W
Issue 3 - March 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008