Diodes ZXTN23015CFH User Manual

ZXTN23015CFH
15V, SOT23, NPN medium power transistor

Summary

V

(BR)CEX

I

C(CONT)

R

CE(SAT)

V

CE(SAT)

P

D

Complementary part number : ZXTP23015CFH

> 60V, V

= 6A

= 19m⍀ typical

< 30mV @ 1A

= 1.25W

(BR)CEO

> 15V

Description

Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.

Features

• Higher power dissipation SOT23 package

• High peak current

• Low saturation voltage

• 60V forward blocking voltage

Applications

•DC - DC converters

• MOSFET and IGBT gate driving

• Motor drive

• Relay, lamp, and solenoid drive

Ordering information

Device Reel size

(inches)

ZXTN23015CFHTA 7 8mm 3000

Tape

width

Quantity per REEL

C

Pinout - top view

E

B

Device marking

327

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© Zetex Semiconductors plc 2006

ZXTN23015CFH

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage V

(BR)CEX

Collector-emitter voltage V

Emitter-base voltage V

Peak pulse current I

Continuous collector current

(c)

Base current I

Power dissipation @ T

Linear derating factor

Power dissipation @ T

Linear derating factor

Power dissipation @ T

Linear derating factor

Power dissipation @ T

Linear derating factor

A

(a)

A

(b)

A

(c)

A

(d)

=25oC

=25oC

=25oC

=25oC

(a)

(b)

(c)

(d)

CBO

CEO

EBO

CM

I

C

B

P

D

P

D

P

D

P

D

60 V

60 V

15 V

7.0 V

12 A

6A

1.2 A

0.73

5.84

1.05

8.4

1.25

9.6

1.81

14.5

W

mW/

W

mW/

W

mW/

W

mW/

o

C

o

C

o

C

o

C

Operating and storage temperature T

j:Tstg

-55 to +150

o

C

Thermal resistance

Parameter Symbol Value Unit

Junction to ambient

Junction to ambient

Junction to ambient

Junction to ambient

NOTES:

(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.

(a)

(b)

(c)

(d)

R⍜

R⍜

R⍜

R⍜

JA

JA

JA

JA

171

119

100

69

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© Zetex Semiconductors plc 2006

o

C/W

o

C/W

o

C/W

o

C/W

Characteristics

ZXTN23015CFH

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© Zetex Semiconductors plc 2006

ZXTN23015CFH

Electrical characteristics (at T

= 25°C unless otherwise stated)

AMB

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown

V

(BR)CBO

60 85 V IC=100␮A

voltage
Collector-emitter breakdown

voltage

Collector-emitter breakdown
voltage

Emitter-base breakdown voltage V

Collector-emitter cut-off current I

Collector-base cut-off current I

Emitter-base cut-off current I

Static forward current transfer
ratio

Collector-emitter saturation
voltage

Base-emitter saturation voltage V

Base-emitter turn-on voltage V

Transition frequency f

V

(BR)CEX

V

(BR)CEO

(BR)EBO

CEX

CBO

EBO

H

FE

V

CE(sat)

BE(sat)

BE(on)

T

60 85 V IC =100␮A,

R

< 1k⍀ OR

BE

15 23 V

-1V < V

I

C

BE

=10mA

7.0 8.3 V IE=100␮A

-100nAV

= 48V,

CE

< 1k⍀ OR

R

BE

-1V < V

BE

<1 20 nA VCB=48V

<1 10 nA VEB=6V

160 300

200 350 560

190 330

150 280

715mV

22 30 mV

70 90 mV

130 180 mV

0.83 0.93 V

0.89 0.98 V

0.81 0.91 V

=10mA, VCE=2V

I

C

=500mA, VCE=2V

I

C

=3A, VCE=2V

I

C

=6A, VCE=2V

I

C

=0.1A, IB=5mA

I

C

=1A, IB=100mA

I

C

=3A, IB=60mA

I

C

=6A, IB=120mA

I

C

=3A, IB=60mA

I

C

=6A, IB=120mA

I

C

=6A, VCE=2V

I

C

235 MHz Ic=500mA, VCE=2V,

f=50MHz

Output capacitance C

Delay time t

Rise time t

Storage time t

Fall time t

obo

(d)

(r)

(stg)

(f)

56 pF VCB=10V, f=1MHz

15 ns VCC=5V, IC=3A,

38.5 ns

I

B1=IB2

=150mA

213 ns

19.7 ns

< 0.25V

(*)

< 0.25V

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300

␮S. Duty cycle ⱕ2%.

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Typical characteristics

ZXTN23015CFH

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© Zetex Semiconductors plc 2006

Package outline - SOT23

L

ZXTN23015CFH

H

N

D

G

3 leads

M

B

A

C

K

F

Dim. Millimeters Inches Dim. Millimeters Inches

Min. Max. Min. Max. Min. Max. Max. Max.

A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020

B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004

C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985

D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025

F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM

G 1.90 NOM 0.075 NOM - - - - -

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Europe

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Germany

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[e-mail]

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This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

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