Diodes ZXTN2040F User Manual

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40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23

Features

• BV

• I

• Low Saturation Voltage V

• Complementary Part Number ZXTP2041F

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

> 40V

CEO

= 1A Continuous Collector Current

C

< 500mV @ 1A

CE(sat)

Description

This transistor combines high gain, high current operation and low
saturation voltage making it ideal for power MOSFET gate driving and
low loss power switching.

SOT23

B

Top View

Mechanical Data

• Case: SOT23

• Case material: Molded Plastic. “Green” Molding Compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,

Method 208

• Weight: 0.008 grams (Approximate)

Applications

• Power MOSFET date driving

• Low loss power switching

C

C

E

Device Symbol

Top View

Pin Configuration

ZXTN2040F

E

B

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN2040FTA N40 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

N40

ZXTN2040F

Document number: DS33668 Rev. 3 - 2

N40 = Product Type Marking Code

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Maximum Ratings (@T

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 5)
Peak Pulse Current
Peak Base Current

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

V
V
V

CBO
CEO
EBO

I

I

CM

I

BM

C

40 V
40 V

6 V
1 A
2 A
1 A

ZXTN2040F

Thermal Characteristics

Characteristic Symbol Value Unit

Collector Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 7)

Operating and Storage Temperature Range

Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition .

6. Same as Note 5, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

(Note 5)
(Note 6) 350
(Note 5)
(Note 6) 357

R
R

T

J,TSTG

P

θJA

θJL

D

310

403

350

-55 to +150

mW

°C/W
°C/W

°C

0.4

0.3

0.2

0.1

0.0
0 255075100125150

Max Power Dissi pa t i o n (W)

Temperature (°C)

Derating Curve

10

Single Pulse. T

1

0.1

10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Width (s )

Pulse Power Dissipation

amb

=25°C

400
350
300
250

D=0.5

200
150

D=0.2

100

50

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

Transient Thermal Impedance

ZXTN2040F

Document number: DS33668 Rev. 3 - 2

2 of 6

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© Diodes Incorporated

August 2012