Diodes ZXTN2038F User Manual

A Product Line of

Diodes Incorporated

ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor

Summary

(BR)CEV

(BR)CEO

c(cont)

ce(sat)

> 80V

> 60V

= 1A

< 500mV @ 1A

Complementary type

ZXTP2039F

Description

This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.

Features

• Low saturation voltage for reduced power dissipation

• 1 to 2 amp high current capability

• Pb-free

• SOT23 package

Applications

• Power MOSFET gate driving

• Low loss power switching

Ordering information

Device Reel size Tape width Quantity per reel

ZXTN2038FTA 7” 8mm 3,000

ZXTN2038FTC 13” 8mm 10,000

Device marking

N38

Issue 4 - January 2009 1 www.zetex.com

ZXTN2038F

NOTES:

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage V

Peak pulse current I

Continuous collector current

(*)

Peak base current I

Power dissipation @ T

=25°C

(*)

Operating and storage temperature T

(*) For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions.

CBO

CEV

CEO

EBO

j:Tstg

80 V

60 V

5.0 V

350 mW

55 to +150 °C

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