Diodes ZXTN2038F User Manual

A Product Line of

Diodes Incorporated

ZXTN2038F
SOT23 80 volt NPN silicon planar medium power
transistor

Summary

V

(BR)CEV

V

(BR)CEO

I

c(cont)

V

ce(sat)

> 80V

> 60V

= 1A

< 500mV @ 1A

Complementary type

ZXTP2039F

Description

This transistor combines high gain, high current operation and low saturation voltage making it
ideal for power MOSFET gate driving and low loss power switching.

Features

• Low saturation voltage for reduced power dissipation

• 1 to 2 amp high current capability

• Pb-free

• SOT23 package

Applications

• Power MOSFET gate driving

• Low loss power switching

Ordering information

Device Reel size Tape width Quantity per reel

ZXTN2038FTA 7” 8mm 3,000

ZXTN2038FTC 13” 8mm 10,000

Device marking

N38

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ZXTN2038F

NOTES:

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage V

Collector-emitter voltage V

Emitter-base voltage V

Peak pulse current I

Continuous collector current

(*)

Peak base current I

Power dissipation @ T

A

=25°C

(*)

Operating and storage temperature T

(*) For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions.

I

P

CM

C

BM

CBO

CEV

CEO

EBO

D

j:Tstg

80 V

80 V

60 V

5.0 V

2A

1A

1A

350 mW

55 to +150 °C

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ZXTN2038F

NOTES:

Electrical characteristics (@T

AMB

= 25°C)

Parameter Symbol Min. Max. Unit Conditions

Collector-base breakdown

V

(BR)CBO

80 V IC=100␮A

voltage

Collector-emitter breakdown

V

voltage

Collector-emitter breakdown

V

voltage

Emitter-base breakdown voltage V

Collector-emitter cut-off current I

Collector-base cut-off current I

Emitter-base cut-off current I

Static forward current transfer
ratio

(BR)CEV

(BR)CEO

(BR)EBO

CES

CBO

EBO

h

FE

80 V IC=100␮A,

0.3V > V

60 V

=10mA

I

C

5VIE=100␮A

100 nA VCE=60V

100 nA VCB=60V

100 nA VEB=4V

100

100

80

30

300

IC=1mA, VCE=5V

I

=500mA, VCE=5V

C

IC=1A, VCE=5V

IC=2A, VCE=5V

BE

(*)

> -1V

(*)

(*)

(*)

Collector-emitter saturation
voltage

V

CE(sat)

0.2

0.25

0.5

Base-emitter saturation voltage V

Base-emitter turn-on voltage V

Transition frequency f

Output capacitance C

(*) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle ⱕ2%
Spice parameter data is available upon request for this device

BE(sat)

BE(on)

T

obo

150 IC=50mA, VCE=10V

1.1 V

1.0 V

10 pF VCB=10V, f=1MHz

V

I

=100mA, IB=2mA

V
V

C

=500mA,

I

C

I

=50mA

B

IC=1A, IB=100mA

=1A, IB=100mA

I

C

=1A, VCE=5V

I

C

f=100MHz

(*)

(*)

(*)

(*)

(*)

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Typical characteristics

V

CE(sat)

-(V)

10A1A10mA 100mA

1mA

-55 °C

+25 °C

+100 °C

I

C/IB

=10

V

CE(sat)

v I

C

IC-Collector Current

I

C

-Collector Current

V

BE(sat)

v I

C

V

BE(sat)

- (V)

0

0.2

100mA10mA

0.4

0.6

0.8

1.0

10A

1A

hFEV I

C

I

C

-Collector Current

1mA

100mA10mA

10A

1A

h

FE

- Typical Gain

100

0

300

200

400

10mA

1mA

IC-Collector Current

V

BE(on)

v I

C

100mA 1A 10A

V

BE(on)

- (V)

0.6

0.8

1.0

1.2

0.4

0.2

0

IC-Collector Current

V

CE(sat)

v I

C

V

CE(sat)

-(V)

1mA

0

0.1

100mA10mA

+25 ° C

0.2

0.3

0.4

0.5

IC/IB=10

10A1A

+100 °C

-55 °C

+25 °C

+100 °C

-55 °C

+25 °C

-55 °C

+25 °C

+100 °C

I

C/IB

=10

V

CE

=5V

V

CE

=5V

I

C

-Collector Current (A)

10

1

0.1

Safe Operating Area

VCE- Collector Emitter Voltage (V)

0.1V 10V 100V

1s

DC

100ms

10ms

100us

1ms

1V

0

1mA

0.01

IC/IB=50

0.6

0.1

0.2

0.3

0.4

0.5

0.6

ZXTN2038F

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Packaging details - SOT23

E

e

L

e1

D

A

c

E1

L1

A1

b

3 leads

ZXTN2038F

Package dimensions

Dim. Millimeters Inches Dim. Millimeters Inches

Min. Max. Min. Max. Min. Max. Min. Max.

A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM

A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104

b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055

c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236

D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024

e0.95 NOM0.037 NOM-----

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

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ZXTN2038F

Definitions
Product change

Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.

Applications disclaimer

The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property
rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether
in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business,
contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances.

Life support

Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body

or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to

cause the failure of the life support device or to affect its safety or effectiveness.

Reproduction

The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.

Terms and Conditions

All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the
two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office.

Quality of product

Diodes Zetex Semconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Inc. or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com
Diodes Inc.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.

Green compliance

Diodes Inc. is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use
of hazardous substances and/or emissions.
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance
with WEEE and ELV directives.

Product status key:

“Preview” Future device intended for production at some point. Samples may be available
“Active” Product status recommended for new designs
“Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs”
“Obsolete” Production has been discontinued

Datasheet status key:

“Draft version” This term denotes a very early datasheet version and contains highly provisional information, which

“Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.

“Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to

does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.

Device is still in production to support existing designs and production

may change in any manner without notice.

However, changes to the test conditions and specifications may occur, at any time and without notice.

specifications may occur, at any time and without notice.

Sales offices

The Americas

3050 E. Hillcrest Drive
Westlake Village,
CA 91362-3154
Tel: [phone]
Fax: [phone]

Europe

Kustermann-Park
Balanstraße 59,
D-81541 München
Germany
Tel: [phone]
Fax: [phone]

Taiwan

7F, No. 50,
Min Chuan Road
Hsin-Tien
Taipei, Taiwan
Tel: [phone]
Fax: [phone]

Shanghai

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Changning Road
Shanghai, China
Tel: [phone]
Fax [phone]

Shenzhen

ANLIAN Plaza, #4018
Jintian Road
Futian CBD,
Shenzhen, China
Tel: [phone]
Fax: [phone]

Korea

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1005-5 Yeongtong-dong,
Yeongtong-gu, Suwon-si,
Gyeonggi-do, Korea 443-813
Tel: [phone]
Fax: [phone]

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