Page 1
ZXTN2031F
50V, SOT23, NPN medium power transistor
Summary
V
(BR)CEV
I
C(cont)
R
CE(sat)
V
CE(sat)
P
D
Complementary part number: ZXTP2025F
> 80V, V
= 5A
= 24m⍀ typical
< 40mV @ 1A
= 1.2W
(BR)CEO
> 50V
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Feature
• Higher power dissipation SOT23 Package
• High peak current
• Low saturation voltage
•High gain
• 80V forward blocking voltage
Applications
• MOSFET and IGBT gate driving
• Motor drive
• Relay, lamp and solenoid drive
• DC-DC converters
Pinout - top view
Ordering information
Device Reel size
(inches)
ZXTN2031FTA 7 8 3,000
Tape width
(mm)
Quantity per reel
Device marking
322
Issue 2 - January 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
Page 2
ZXTN2031F
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
Collector-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous collector current
(a)
Base current I
Power dissipation @ T
=25oC
A
(a)
Linear derating factor
Power dissipation @ T
=25oC
A
(b)
Linear derating factor
Power dissipation @ T
=25oC
A
(c)
Linear derating factor
Operating and storage temperature T
CBO
(BR)CEV
CEO
EBO
CM
I
C
B
P
D
P
D
P
D
j:Tstg
80 V
80 V
50 V
7.0 V
12 A
5A
1.2 A
1.0
8.0
mW/
1.2
9.6
mW/
1.56
12.5
mW/
-55 to
+150
W
W
W
o
o
C
o
C
o
C
C
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) As (b) above measured at t<5secs.
(a)
(b)
(c)
Rθ
Rθ
Rθ
JA
JA
JA
125
104
80
o
C/W
o
C/W
o
C/W
Issue 2 - January 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Page 3
Characteristics
ZXTN2031F
Issue 2 - January 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
Page 4
ZXTN2031F
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
V
(BR)CBO
80 175 V IC=100µA
voltage
Collector-emitter breakdown
V
(BR)CEV
80 175 V
IC =1µA, -1V< VBE<+0.3V
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
V
(BR)CEO
V
(BR)EBO
50 75 V
=10mA
I
C
7.0 8.3 V IE=100µA
voltage
Collector-emitter cut-off
I
CEV
<1 20 nA VCE=60V, VBE = -1V
current
Collector-base cut-off current I
Emitter-base cut-off current I
Static forward current
transfer ratio
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Base-emitter turn-on voltage V
Transition frequency f
CBO
EBO
H
FE
V
CE(sat)
V
BE(sat)
BE(on)
T
190
200
200
80
<1 20 nA VCB=60V
<1 10 nA VEB=6V
300
350
560
340
125
13
30
80
135
0.80
0.92
18
40
110
170
0.90
1.00
mV
mV
mV
mV
0.83 0.93 V
I
=10mA, VCE=2V
C
IC=500mA, VCE=2V
IC=2A, VCE=2V
IC=5A, VCE=2V
I
=0.1A, IB=5mA
C
IC=1A, IB=100mA
IC=2A, IB=40mA
IC=5A, IB=250mA
V
I
=2A, IB=40mA
C
V
IC=5A, IB=250mA
=5A, VCE=2V
I
C
125 MHz Ic=500mA, VCE=10V,
f=50MHz
Output capacitance C
Delay time t
Rise time t
Storage time t
Fall time t
obo
(d)
(r)
(stg)
(f)
29 pF VCB=10V, f=1MHz
16 ns
27 ns VCC=12V, IC=2.5A,
468 ns IB1=IB2=125mA
44 ns
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300S. Duty cycle ⱕ2%.
Issue 2 - January 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Page 5
Typical characteristics
ZXTN2031F
Issue 2 - January 2006 5 www.zetex.com
© Zetex Semiconductors plc 2006
Page 6
Packaging details - SOT23
L
N
ZXTN2031F
H
D
G
3 leads
M
B
A
C
K
F
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM - - - - -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Issue 2 - January 2006 6 www.zetex.com
© Zetex Semiconductors plc 2006
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