Diodes ZXTN2031F User Manual

Page 1
ZXTN2031F 50V, SOT23, NPN medium power transistor
Summary
V
(BR)CEV
I
C(cont)
R
CE(sat)
V
CE(sat)
P
D
Complementary part number: ZXTP2025F
> 80V, V
= 5A
= 24m typical
< 40mV @ 1A
= 1.2W
> 50V
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
Feature
Higher power dissipation SOT23 Package
High peak current
Low saturation voltage
•High gain
80V forward blocking voltage
Applications
MOSFET and IGBT gate driving
Motor drive
Relay, lamp and solenoid drive
DC-DC converters
Pinout - top view
Ordering information
Device Reel size
(inches)
ZXTN2031FTA 7 8 3,000
Tape width
(mm)
Quantity per reel
Device marking
322
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Page 2
ZXTN2031F
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
Collector-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous collector current
(a)
Base current I
Power dissipation @ T
=25oC
A
(a)
Linear derating factor
Power dissipation @ T
=25oC
A
(b)
Linear derating factor
Power dissipation @ T
=25oC
A
(c)
Linear derating factor
Operating and storage temperature T
CBO
(BR)CEV
CEO
EBO
CM
I
C
B
P
D
P
D
P
D
j:Tstg
80 V
80 V
50 V
7.0 V
12 A
5A
1.2 A
1.0
8.0
mW/
1.2
9.6
mW/
1.56
12.5
mW/
-55 to +150
W
W
W
o
o
C
o
C
o
C
C
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) As (b) above measured at t<5secs.
(a)
(b)
(c)
Rθ
Rθ
Rθ
JA
JA
JA
125
104
80
o
C/W
o
C/W
o
C/W
Issue 2 - January 2006 2 www.zetex.com
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Page 3
Characteristics
ZXTN2031F
Issue 2 - January 2006 3 www.zetex.com
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Page 4
ZXTN2031F
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
V
(BR)CBO
80 175 V IC=100µA
voltage
Collector-emitter breakdown
V
(BR)CEV
80 175 V
IC =1µA, -1V< VBE<+0.3V
voltage
Collector-emitter breakdown voltage
Emitter-base breakdown
V
(BR)CEO
V
(BR)EBO
50 75 V
=10mA
I
C
7.0 8.3 V IE=100µA
voltage
Collector-emitter cut-off
I
CEV
<1 20 nA VCE=60V, VBE = -1V
current
Collector-base cut-off current I
Emitter-base cut-off current I
Static forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage V
Transition frequency f
CBO
EBO
H
FE
V
CE(sat)
V
BE(sat)
BE(on)
T
190
200
200
80
<1 20 nA VCB=60V
<1 10 nA VEB=6V
300
350
560
340
125
13
30
80
135
0.80
0.92
18
40
110
170
0.90
1.00
mV
mV
mV
mV
0.83 0.93 V
I
=10mA, VCE=2V
C
IC=500mA, VCE=2V
IC=2A, VCE=2V
IC=5A, VCE=2V
I
=0.1A, IB=5mA
C
IC=1A, IB=100mA
IC=2A, IB=40mA
IC=5A, IB=250mA
V
I
=2A, IB=40mA
C
V
IC=5A, IB=250mA
=5A, VCE=2V
I
C
125 MHz Ic=500mA, VCE=10V,
f=50MHz
Output capacitance C
Delay time t
Rise time t
Storage time t
Fall time t
obo
(d)
(r)
(stg)
(f)
29 pF VCB=10V, f=1MHz
16 ns
27 ns VCC=12V, IC=2.5A,
468 ns IB1=IB2=125mA
44 ns
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300S. Duty cycle ⱕ2%.
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Page 5
Typical characteristics
ZXTN2031F
Issue 2 - January 2006 5 www.zetex.com
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Page 6
Packaging details - SOT23
L
N
ZXTN2031F
H
D
G
3 leads
M
B
A
C
K
F
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM - - - - -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Zetex GmbH Streitfeldstraße 19 D-81673 München Germany
Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Americas
Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA
Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong
Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom
Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
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© Zetex Semiconductors plc 2006
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