Diodes ZXTN2031F User Manual

ZXTN2031F 50V, SOT23, NPN medium power transistor

Summary

(BR)CEV

C(cont)

CE(sat)

Complementary part number: ZXTP2025F

> 80V, V

= 5A

= 24m⍀ typical

< 40mV @ 1A

= 1.2W

(BR)CEO

> 50V

Description

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Feature

• Higher power dissipation SOT23 Package

• High peak current

• Low saturation voltage

•High gain

• 80V forward blocking voltage

Applications

• MOSFET and IGBT gate driving

• Motor drive

• Relay, lamp and solenoid drive

• DC-DC converters

Pinout - top view

Ordering information

Device Reel size

(inches)

ZXTN2031FTA 7 8 3,000

Tape width

(mm)

Quantity per reel

Device marking

322

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ZXTN2031F

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage V

Peak pulse current I

Continuous collector current

(a)

Base current I

Power dissipation @ T

=25oC

(a)

Linear derating factor

Power dissipation @ T

=25oC

(b)

Linear derating factor

Power dissipation @ T

=25oC

(c)

Linear derating factor

Operating and storage temperature T

CBO

(BR)CEV

CEO

EBO

j:Tstg

80 V

50 V

7.0 V

12 A

1.2 A

1.0

8.0

mW/

1.2

9.6

mW/

1.56

12.5

mW/

-55 to +150

Thermal resistance

Parameter Symbol Value Unit

Junction to ambient

NOTES:

(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) As (b) above measured at t<5secs.

(a)

(b)

(c)

Rθ

125

104

C/W

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