Diodes ZXTN2020F User Manual
ZXTN2020F
100V, SOT23, NPN medium power transistor
Summary
V
(BR)CEV
I
C(cont)
R
CE(sat)
V
CE(sat)
P
D
Complementary part number: ZXTP2029F
> 160V, V
= 4A
= 30m⍀ typical
< 50mV @ 1A
= 1.2W
(BR)CEO
> 100V
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
• Higher power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 160V forward blocking voltage
Applications
• MOSFET and IGBT gate driving
• Motor drive
• Relay, lamp and solenoid drive
Ordering information
Device Reel size
(inches)
ZXTN2020FTA 7 8 3,000
Tape width
(mm)
Quantity per reel
Pinout - top view
Device marking
853
Issue 4 - January 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXTN2020F
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
(BR)CEV
Collector-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous collector current
(a)
Base current I
Power dissipation @ T
A
=25oC
(a)
Linear derating factor
Power dissipation @ T
A
=25oC
(b)
Linear derating factor
Power dissipation @ T
A
=25oC
(c)
Linear derating factor
Operating and storage temperature T
CBO
CEO
EBO
CM
I
C
B
P
D
P
D
P
D
j:Tstg
160 V
160 V
100 V
7V
12 A
4A
1A
1.0
8
mW/
1.2
9.6
mW/
1.56
12.5
mW/
-55 to +150
W
W
W
o
o
C
o
C
o
C
C
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient
Junction to ambient
Junction to ambient
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) as (b) above measured at t<5secs.
(a)
(b)
(c)
Rθ
Rθ
Rθ
JA
JA
JA
125
104
80
o
C/W
o
C/W
o
C/W
Issue 4 - January 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
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