Diodes ZXTN2011Z User Manual

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Diodes Incorporated

ZXTN2011Z

100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

Features

• BV

• I

• I

• R

• Low saturation voltage V

• h

• Lead-Free Finish; RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

> 100V

CEO

= 4.5A high Continuous Current

C

= 10A Peak Pulse Current

CM

= 31mΩ for a low equivalent On-Resistance

CE(sat)

specified up to 10A for high current gain hold up

FE

< 60mV @ IC = 1A

CE(sat)

Mechanical Data

• Case: SOT89

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.05 grams (Approximate)

Applications

• Motor driving

• Line switching

• High side switches

SOT89

Top View

B

Device Symbol

• Subscriber line interface cards (SLIC)

C

C

E

E

C

B

Top View

Pin Out

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXTN2011ZTA 853 7 12 1,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

853

853 = Product Type Marking Code

ZXTN2011Z
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tasheet Number: DS33663 Rev. 3 - 2

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ZXTN2011Z

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Linear derating factor
Power Dissipation (Note 6)
Linear derating factor

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range

ESD Ratings (Note 8)

V
V
V

I

R
R
R

T

J, TSTG

CBO

CEO

EBO

I

C

CM

P

D

P

D

θJA

θJA

θJL

200 V
100 V

7 V

4.5 A
10 A

1.5
12

2.1

16.8
83
60

3.23

-55 to +150

W

mW/°C

W

mW/°C

°C/W
°C/W
°C/W

°C

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device

measured when operating in steady state condition.

6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 1oz weight copper.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

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Thermal Characteristics and Derating Information

V

CE(sat)

10

Limit

DC

1

1s

100ms

100m

Collector Current (A)
I

Single Pulse. T

25mmX 25mm FR4 PCB

C

10m

100m 1 10 100

1oz Cu

VCE Collector-Emitter Voltage (V)

amb

10ms

=25°C

1ms

100µs

Max Power Dissipation (W)

Safe Operating Area

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2.0

1.5

1.0

25mmX 25mm FR4 PCB

0.5

1oz Cu

0.0
0 20 40 60 80 100 120 140 160

50mmX 50mm FR4 PCB
1oz Cu

Temperature (°C)

Derating Curve

ZXTN2011Z

80

25mmX 25mm FR4 PCB
1oz Cu

60

D=0.5

40

D=0.2

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Impedance

Single Pulse. T

100

10

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

25mmX 25mm FR4 PCB

Pulse Width (s)

amb

1oz Cu

Pulse Power Dissipation

=25°C

ZXTN2011Z
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tasheet Number: DS33663 Rev. 3 - 2

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December 2012

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