Diodes ZXTN2010Z User Manual

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Green

60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

Features

Mechanical Data

Diodes Incorporated

ZXTN2010Z

 BV
 I
 R
 Low Saturation Voltage V
 h
 Complementary PNP Type: ZXTP2012Z
 Lead-Free Finish; RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP Capable (Note 4)

> 60V

CEO

= 5A High Continuous Current

C

= 30mΩ for a Low Equivalent On-Resistance

SAT

< 65mV @ IC = 1A

CE(SAT)

Specified Up to 10A for High Current Gain Hold Up

FE

Application

 Emergency Lighting Circuits
 Motor Driving (including DC Fans)
 Backlight Inverters
 Power Switches
 Gate Driving MOSFETs and IGBTs

SOT89

Top View

B

Device Symbol

 Case: SOT89
 Case Material: Molded Plastic. “Green” Molding Compound.
 UL Flammability Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.05 grams (Approximate)

C

E

C

E

Top View

Pin Out

C

B

Ordering Information (Note 5)

Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel

ZXTN2010ZTA AEC-Q101 851 7 12 1,000
ZXTN2010Z-13R AEC-Q101 851 13 12 4,000
ZXTN2010ZQTA Automotive 851 7 12 1,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

ZXTN2010Z

tasheet Number: DS33661 Rev. 4 - 2

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851

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851 = Product Type Marking Code

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 6)
Linear derating factor

Power Dissipation (Note 7)
Linear derating factor

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range

ESD Ratings (Note 9)

V
V
V

I

R
R
R

T

J, TSTG

CBO
CEO
EBO

I

C

CM

P

D

P

D

θJA
θJA
θJL

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ZXTN2010Z

150 V

60 V

7 V
5 A

20 A

1.5
12

2.1

16.8

W

mW/°C

W

mW/°C
83 °C/W
60 °C/W

3.23 °C/W

-55 to +150 °C

Electrostatic Discharge - Human Body Model ESD HBM ≥ 4,000 V 3A

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 6. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is

measured under still air conditions whilst operating in a steady-state.

7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.

8. Thermal resistance from junction to solder-point (on the exposed collector pad).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

ZXTN2010Z

tasheet Number: DS33661 Rev. 4 - 2

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Thermal Characteristics and Derating Information

V

10

CE(sat)

Limit

2.0

1.5

DC

1

1s

100ms

100m

Single Pulse. T

Collector Current (A)

C

I

10m

100m 1 10 100

25x25mm 1oz Cu

amb

10ms

=25°C

1ms

100µs

VCE Collector-Emitter Voltage (V)

1.0

0.5

0.0

Max Powe r Di ssi pa tion (W)

Safe Operating Area

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ZXTN2010Z

50x50mm 1oz Cu

25x25mm 1oz Cu

0 20406080100120140160

Temperature (°C)

Derating Curve

80

25x25mm 1oz Cu

60

D=0.5

40

D=0.2

Single Pulse

20

D=0.05

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resi stance (° C/ W)

Pul se Width (s)

D=0.1

Transient Thermal Impedance

100

Single Pulse. T

25x25mm 1oz Cu

amb

10

1

100µ 1m 10m 100m 1 10 100 1k

Max Po w e r D issipat ion (W)

Pulse Width (s)

Pulse Power Dissipation

=25°C

ZXTN2010Z

tasheet Number: DS33661 Rev. 4 - 2

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)

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Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage

Collector Cutoff Current

Collector Cutoff Current
Emitter Cutoff Current

BV
BV
BV
BV

R

CBO
CER
CEO
EBO

I

CBO

I

CER

≤1kΩ

I

EBO

150 190 — V
150 190 — V

60 80 — V

7 8.1 — V

— < 1

— < 1
— < 1 10 nA

100 200

DC Current Transfer Static Ratio (Note 10)

h

FE

100 200 300

55 105
20 40

—
—

Collector-Emitter Saturation Voltage (Note 10)

Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-on Voltage (Note 10)

Transitional Frequency
Output Capacitance

Switching Time

Note: 10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

V

CE(SAT)

V

BE(SAT

V

BE(ON

C

t

t

OFF

f

obo

ON

T

—
—
—

— 970 1100 mV
— 910 1050 mV

— 130 — MHz
—

—

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50

500
100

500

—

—
—

17 30
35 55
40 65
90 125

170 230

31
42

760

—
— ns

nA
nA

nA
nA

—

mV

pF

ZXTN2010Z

IC = 100µA
IC = 1µA, R
IC = 10mA
IE = 100µA
V

= 120V

CB

V

= 120V, TA = +100°C

CB

V

= 120V

CB

= 120V, TA = +100°C

V

CB

VEB = 6V
I

= 10mA, VCE = 1V

C

= 2A, VCE = 1V

I

C

I

= 5A, VCE = 1V

C

I

= 10A, VCE = 1V

C

= 100mA, IB = 5mA

I

C

= 1A, IB = 100mA

I

C

= 1A, IB = 50mA

I

C

= 2A, IB = 50mA

I

C

= 6A, IB = 300mA

I

C

IC = 6A, IB = 300mA
IC = 6A, V

= 100mA, V

I

C

f = 50MHz

= 10V, f = 1MHz,

V

CB

= 10V, I

V

CC

= IB2 = 100mA

I

B1

B

CE

≤ 1kΩ

= 1V

CE

= 1A,

C

= 10V,

ZXTN2010Z

tasheet Number: DS33661 Rev. 4 - 2

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Typical Electrical Characteristics (@T

1

Tamb=25°C

100m

(V)

CE(SAT)

V

10m

1m 10m 100m 1 10

IC Colle cto r Current (A)

V

CE(SAT)

v I

C

= +25°C, unless otherwise specified.)

A

0.6

IC/IB=10

1m 10m 100m 1 10

IC/IB=50

IC/IB=20

IC/IB=10

(V)

V

CE(SAT)

0.5

0.4

0.3

0.2

0.1

0.0

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ZXTN2010Z

100°C

25°C

IC Collector Current (A)

V

CE(SAT)

v I

C

-55°C

1.2

1.0

0.8

0.6

0.4

Normalised Gain

0.2

0.0
1m 10m 100m 1 10

100°C

25°C

-55°C

IC Colle cto r Current (A)

(V)

V

hFE v I

1.4

1.2

1.0

0.8

BE(ON)

0.6

VCE=1V

-55°C

25°C

C

VCE=1V

250

200

150

100

50

0

1.6

IC/IB=10

1.4

)

FE

Typical Gain (h

1.2

1.0

(V)

0.8

BE(SAT)

V

0.6

0.4
1m 10m 100m 1 10

-55°C

25°C

100°C

IC Collector Current (A)

V

BE(SAT)

v I

C

0.4
1m 10m 100m 1 10

100°C

IC Colle cto r Current (A)

V

BE(ON)

ZXTN2010Z

tasheet Number: DS33661 Rev. 4 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

D1

E

0

0

2

.

0

R

1

H

8° (4X)

B

e

L

B1

A

D

C

Dim Min Max

H

B1 0.35 0.54

D1 1.62 1.83

H1 2.63 2.93

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y3

Y

X (3x)

X1

X2 (2x)

Y2

Dimensions Value (in mm)

X 0.900

Y1

Y4

C

X1 1.733
X2 0.416

Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125

C 1.500

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ZXTN2010Z

SOT89

A 1.40 1.60
B 0.44 0.62

C 0.35 0.44
D 4.40 4.60

E 2.29 2.60
e 1.50 Typ
H 3.94 4.25

L 0.89 1.20

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

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ZXTN2010Z

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tasheet Number: DS33661 Rev. 4 - 2

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