Product Line o
Green
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Features
Mechanical Data
Diodes Incorporated
ZXTN2010Z
BV
I
R
Low Saturation Voltage V
h
Complementary PNP Type: ZXTP2012Z
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
> 60V
CEO
= 5A High Continuous Current
C
= 30mΩ for a Low Equivalent On-Resistance
SAT
< 65mV @ IC = 1A
CE(SAT)
Specified Up to 10A for High Current Gain Hold Up
FE
Application
Emergency Lighting Circuits
Motor Driving (including DC Fans)
Backlight Inverters
Power Switches
Gate Driving MOSFETs and IGBTs
SOT89
Top View
B
Device Symbol
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
C
E
C
E
Top View
Pin Out
C
B
Ordering Information (Note 5)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
ZXTN2010ZTA AEC-Q101 851 7 12 1,000
ZXTN2010Z-13R AEC-Q101 851 13 12 4,000
ZXTN2010ZQTA Automotive 851 7 12 1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
ZXTN2010Z
tasheet Number: DS33661 Rev. 4 - 2
Da
851
www.diodes.com
851 = Product Type Marking Code
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May 2013
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Linear derating factor
Power Dissipation (Note 7)
Linear derating factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
ESD Ratings (Note 9)
V
V
V
I
R
R
R
T
J, TSTG
CBO
CEO
EBO
I
C
CM
P
D
P
D
θJA
θJA
θJL
Product Line o
Diodes Incorporated
ZXTN2010Z
150 V
60 V
7 V
5 A
20 A
1.5
12
2.1
16.8
W
mW/°C
W
mW/°C
83 °C/W
60 °C/W
3.23 °C/W
-55 to +150 °C
Electrostatic Discharge - Human Body Model ESD HBM ≥ 4,000 V 3A
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 6. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN2010Z
tasheet Number: DS33661 Rev. 4 - 2
Da
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Thermal Characteristics and Derating Information
V
10
CE(sat)
Limit
2.0
1.5
DC
1
1s
100ms
100m
Single Pulse. T
Collector Current (A)
C
I
10m
100m 1 10 100
25x25mm 1oz Cu
amb
10ms
=25°C
1ms
100µs
VCE Collector-Emitter Voltage (V)
1.0
0.5
0.0
Max Powe r Di ssi pa tion (W)
Safe Operating Area
Product Line o
Diodes Incorporated
ZXTN2010Z
50x50mm 1oz Cu
25x25mm 1oz Cu
0 20406080100120140160
Temperature (°C)
Derating Curve
80
25x25mm 1oz Cu
60
D=0.5
40
D=0.2
Single Pulse
20
D=0.05
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resi stance (° C/ W)
Pul se Width (s)
D=0.1
Transient Thermal Impedance
100
Single Pulse. T
25x25mm 1oz Cu
amb
10
1
100µ 1m 10m 100m 1 10 100 1k
Max Po w e r D issipat ion (W)
Pulse Width (s)
Pulse Power Dissipation
=25°C
ZXTN2010Z
tasheet Number: DS33661 Rev. 4 - 2
Da
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May 2013
© Diodes Incorporated