Diodes ZXTN2010G User Manual
ZXTN2010G
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
CEO
= 60V : R
BV
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 60V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
Extremely low equivalent on-resistance; R
•
6 amps continuous current
•
Up to 20 amps peak current
•
Very low saturation voltages
•
Excellent hFEcharacteristics up to 10 amps
•
= 35m ; IC= 6A
SAT
= 35mV at 6A
SAT
3
2
2
T
O
S
APPLICATIONS
•
Emergency lighting circuits
•
Motor driving (including DC fans)
•
Solenoid, relay and actuator drivers
•
DC Modules
•
Backlight Inverters
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXTN2010GTA 7” 12mm
ZXTN2010GTC 13” 4000 units
TAPE
WIDTH
embossed
QUANTITY PER
REEL
1000 units
DEVICE MARKING
ZXTN
2010
ISSUE 2 - MAY 2006
PINOUT
TOP VIEW
1
SEMICONDUCTORS
ZXTN2010G
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current
(a)
Peak pulse current I
(a)
Power dissipation at T
=25°C
A
CBO
CEO
EBO
I
C
CM
P
D
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
D
Linear derating factor
Operating and storage temperature range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(a)
R
⍜JA
150 V
60 V
7V
6 A
20 A
3.0
24
1.6
12.8
W
mW/°C
W
mW/°C
-55 to +150 °C
42 °C/W
SEMICONDUCTORS
ISSUE 2 - MAY 2006
2
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