Diodes ZXTN2010A User Manual

ZXTN2010A

60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE

SUMMARY

= 60V : R

BV

CEO

DESCRIPTION

Packaged in the E-line outline this new low saturation 60V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.

FEATURES

Extemely low equivalent on-resistance; R

•

4.5 amps continuous current

•

Up to 15 amps peak current

•

Very low saturation voltages

•

APPLICATIONS

•

Emergency lighting circuits

= 34m ; IC= 4.5A

SAT

= 34m at 5A

SAT

I

E

-

N

L

E

•

Motor driving (including DC fans)

•

Solenoid, relay and actuator drivers

•

DC modules

•

Backlight inverters

ORDERING INFORMATION

DEVICE QUANTITY

ZXTN2010ASTOA

ZXTN2010ASTZ

2000 units / reel

2000 units / carton

DEVICE MARKING

ZXT
N20
10

ISSUE 2 - MAY 2006

PINOUT

1

SEMICONDUCTORS

ZXTN2010A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Collector-base voltage BV

Collector-emitter voltage BV

Emitter-base voltage BV

Continuous collector current

(a)

Peak pulse current I

Practical power dissipation

(a)

CBO

CEO

EBO

I

C

CM

P

D

Linear derating factor

Power dissipation at T

=25°C

A

(b)

P

D

Linear derating factor

Operating and storage temperature range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to ambient

Junction to ambient

NOTES

(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

Collector lead length to solder point 4mm.

(b For a device mounted in a socket in still air conditions. Collector lead length 10mm.

(a)

(b)

R

R

⍜JA

⍜JA

150 V

60 V

7V

4.5 A

15 A

1.0

8

0.71

5.7

W

mW/°C

W

mW/°C

-55 to +150 °C

125 °C/W

175 °C/W

SEMICONDUCTORS

ISSUE 2 - MAY 2006

2