Diodes ZXTN2007G User Manual
ZXTN2007G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
= 30V : R
BV
CEO
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 30V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
Extemely low equivalent on-resistance; R
•
7 amps continuous current
•
Up to 20 amps peak current
•
Very low saturation voltages
•
Excellent hFEcharacteristics up to 20 amps
•
= 28m ; IC= 7A
SAT
= 28m at 6.5A
SAT
3
2
2
T
O
S
APPLICATIONS
•
DC - DC converters
•
MOSFET gate drivers
•
Charging circuits
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL
SIZE
ZXTN2007GTA 7”
ZXTN2007GTC 13" 4,000 units
TAPE
WIDTH
12mm
embossed
QUANTITY PER
REEL
1,000 units
DEVICE MARKING
ZXTN
2007
ISSUE 2 - MAY 2006
PINOUT
TOP VIEW
1
SEMICONDUCTORS
ZXTN2007G
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current
(a)
Peak pulse current I
(a)
Power dissipation at T
=25°C
A
CBO
CEO
EBO
I
C
CM
P
D
Linear derating factor
Power dissipation at T
=25°C
A
(b)
P
D
Linear derating factor
Operating and storage temperature range T
j,Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
Junction to ambient
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(a)
(b)
R
R
⍜JA
⍜JA
80 V
30 V
7V
7A
20 A
3.0
24
1.6
12.8
W
mW/°C
W
mW/°C
-55 to +150 °C
42 °C/W
78 °C/W
SEMICONDUCTORS
ISSUE 2 - MAY 2006
2
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